Aspects of this disclosure relate to an acoustic wave device with transverse mode suppression. The acoustic wave device can include a piezoelectric layer, an interdigital transducer electrode, a temperature compensation layer, and a mass loading strip. The mass loading strip can overlap edge portions of fingers of the interdigital transducer electrode. The mass loading strip can have a sidewall that is tapered inwardly from a bottom side of the mass loading strip to a top side of the mass loading strip. The top side can be shorter than the bottom side.

Aspects herein include minimizing hot spots on a filter chip by creating thermal radiators using mechano-acoustic structures and connection circuitry. A gradual increase of metal to wafer relation provides better heat dissipation and heat sinking. Shunt lines of a ladder type arrangement of SAW resonators comprise a broadened section. Resonators that are subsequent to each other in the series signal line are connected via a common busbar extending over a length of subsequent series resonators. A lateral extension of the common busbars represents a first section of a respective shunt line. A first shunt line section between a node and the parallel resonator of a shunt line comprises a section that is broader than the common busbar, the broadened section extending over the width of the parallel resonator. The first reflector of the parallel resonator that faces the laterally adjacent series resonator is formed from the broadened section.

An acoustic wave filter includes a piezoelectric layer. A first acoustic wave device includes a portion of the piezoelectric layer and a first multi-layer interdigital transducer electrode disposed over the first portion of the piezoelectric layer. Additional acoustic wave devices are coupled to the first acoustic wave device, the additional acoustic wave devices including a second portion of the piezoelectric layer and a plurality of multi-layer interdigital transducer electrodes disposed over the second portion of the piezoelectric layer. At least one of the plurality of multi-layer interdigital transducer electrodes includes a layer that is thinner than a corresponding layer of the same material of the first multi-layer interdigital transducer electrode of the first acoustic wave device.

An acoustic wave filter includes a piezoelectric layer. A first acoustic wave device includes a portion of the piezoelectric layer and a first multi-layer interdigital transducer electrode disposed over the first portion of the piezoelectric layer. Additional acoustic wave devices are coupled to the first acoustic wave device, the additional acoustic wave devices including a second portion of the piezoelectric layer and a plurality of multi-layer interdigital transducer electrodes disposed over the second portion of the piezoelectric layer. At least one of the plurality of multi-layer interdigital transducer electrodes includes a layer that is thinner than a corresponding layer of the same material of the first multi-layer interdigital transducer electrode of the first acoustic wave device.

The present invention discloses a real-time ultrasonic stimulation electric signal recording chip and a preparation method thereof, where the preparation method includes the following steps: S1 manufacturing an interdigital electrode on a piezoelectric substrate to obtain a surface acoustic wave chip, and manufacturing a recording electrode and an electrode lead; S2, manufacturing an insulation protection layer on the chip obtained in the S1, and processing the insulation protection layer to form the recording electrode, so as to obtain a chip combining the interdigital electrode and the recording electrode; S3, preparing a PDMS cavity; and S4, bonding the PDMS cavity prepared in the S3 and the chip obtained in the S2. In the present invention, combining the interdigital electrode generating a surface acoustic wave ultrasound with a multi-channel recording electrode, such that real-time recording of a multi-channel electric signal under ultrasonic stimulation is achieved.

The present invention discloses a real-time ultrasonic stimulation electric signal recording chip and a preparation method thereof, where the preparation method includes the following steps: S1 manufacturing an interdigital electrode on a piezoelectric substrate to obtain a surface acoustic wave chip, and manufacturing a recording electrode and an electrode lead; S2, manufacturing an insulation protection layer on the chip obtained in the S1, and processing the insulation protection layer to form the recording electrode, so as to obtain a chip combining the interdigital electrode and the recording electrode; S3, preparing a PDMS cavity; and S4, bonding the PDMS cavity prepared in the S3 and the chip obtained in the S2. In the present invention, combining the interdigital electrode generating a surface acoustic wave ultrasound with a multi-channel recording electrode, such that real-time recording of a multi-channel electric signal under ultrasonic stimulation is achieved.

Aspects of this disclosure relate to an acoustic wave device with transverse mode suppression. The acoustic wave device can include a piezoelectric layer, an interdigital transducer electrode, a temperature compensation layer, and a mass loading strip. The mass loading strip can overlap edge portions of fingers of the interdigital transducer electrode. The mass loading strip can have a sidewall that is tapered inwardly from a bottom side of the mass loading strip to a top side of the mass loading strip. The top side can be shorter than the bottom side.

Aspects of this disclosure relate to an acoustic wave device with transverse mode suppression. The acoustic wave device can include a piezoelectric layer, an interdigital transducer electrode, a temperature compensation layer, and a mass loading strip. The mass loading strip can overlap edge portions of fingers of the interdigital transducer electrode. The mass loading strip can have a sidewall that is tapered inwardly from a bottom side of the mass loading strip to a top side of the mass loading strip. The top side can be shorter than the bottom side.

An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.

An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.