A band-pass filter includes a first input/output port, a second input/output port, a first high-pass filter, a first low-pass filter, and a first stub resonator. The first stub resonator includes a first distributed constant line. The first low-pass filter is provided between the first input/output port and the first high-pass filter in the circuit configuration. The first distributed constant line has a first end connected to a first path connecting the first input/output port and the first low-pass filter, and a second end closest to a ground in the circuit configuration.

A multilayer circuit board with an LC resonant circuit that has an electronic component package including the multilayer circuit board with the LC resonant circuit are provided. The multilayer circuit board with the LC resonant circuit configured by alternately laminating conductive layers and insulating resin layers on both sides of a core substrate includes a first set of wiring lines, a set of vias, and a second set of wiring lines. The first set of wiring lines configures both ends of the LC resonant circuit and is formed in a first one of the conductive layers. The set of vias extends through the insulating resin layers. The second set of wiring lines is connected to an input/output terminal of the LC resonant circuit and is formed in a second one of the conductive layers. The first set of wiring lines is connected to the second set of wiring lines.

A multiplexer includes: a first terminal; a second terminal; a third terminal; a first filter connected between the first and second terminals, including a first capacitor, a first inductor, and one or more first acoustic wave resonators, and having a first passband; a second filter connected between the first and third terminals, including a second capacitor, a second inductor, and one or more second acoustic wave resonators, and having a second passband higher than the first passband; a substrate having a surface on which at least one first acoustic wave resonator of the one or more first acoustic wave resonators and at least one second acoustic wave resonator of the one or more second acoustic wave resonators are located; and a metal structure located on the surface and located between the at least one first acoustic wave resonator and the at least one second acoustic wave resonator.

Provided is a stacked electronic component having: a stacked body 1 in which ceramic layers 1a to 1h are stacked, the stacked body having an a upper surface U and side surfaces S; at least one recess portion 8 formed on the upper surface U that indicates at least one of a mark, a letter, or a number; electrodes 3, 4, 5, 6 formed between the layers of the stacked body 1; and a shield layer 9 formed on the upper surface U and the side surfaces S of the stacked body 1. Right below an inner bottom surface of the recess portion 8 of the stacked body 1, there is provided a no-electrode region NE in which the electrodes 3, 4, 5, 6 are not formed, the no-electrode region NE having a thickness which is equal to or larger than a depth of the recess portion 8.

This disclosure is directed to filtering in a transceiver of an electronic device. In some instances, active analog filters may be deployed in the transceiver of the electronic device to achieve greater linearity and/or reduce noise in the transceiver. However, as signal bandwidth grows increasingly larger, an active analog filter may consume excessive power. To remedy the excessive power consumption, a passive ladder LC filter may be used. Some LC ladder filters may include a limited quality factor (Q), which may lead to undesirable effects in the transceiver (e.g., voltage droop). To address these undesirable effects, certain components in the LC ladder filter may be relocated from an input port to a feedback chain of an amplifier coupled to the LC ladder filter. The new structure may enable components in the LC ladder filter to be tuned without causing additional voltage droop across the LC ladder filter.

An improved filter for high frequency, such as 5G wireless communication, may include inductor-Q improvement and reduced die-size with a hybrid 3D-inductor integration. In some examples, the inductors may be formed using an IPD and a fan-out package. For instance, a first multilayer substrate comprises a plurality of metal insulator metal (MIM) capacitors formed using various layers (e.g., M1 and M2) and a first portion of the 3D inductors, and a second multilayer substrate comprises at least a second portion of the 3D inductors. The 3D inductors may be electrically coupled to the MIM capacitors to form at least one filter network.

A resonator element for use in a filter is provided. The resonator element includes a first resonator acoustically coupled to a second or third resonator or both. The first resonator has terminals for incorporation in a filter structure. A tuning circuit is coupled to the second or third resonator or both to enable tuning of the resonator element. The tuning circuit includes a variable capacitor and an inductor.

Embodiments relate to a transformer-based impedance matching network that may dynamically change its characteristic impedance by engaging different inductor branches on a primary side and optionally, on the secondary side. A primary side transformer circuit includes a primary inductor (311) and secondary inductor (321) configured to provide impedance matching over a first frequency band. One or more additional inductor branches (314A, 314B, are switchably coupled to either or both of the primary and secondary inductors to modify the impedance matching characteristics over additional operating frequencies. One or more LC filter branches (321, 322, 326, 327, 336, 330) can be included at the output of the secondary side to filter harmonic frequencies in each of the operating frequency bands.

A multiplexer includes an antenna terminal, an inductance element, and a transmission-side filter and a reception-side filter connected to the antenna terminal. The transmission-side filter has a first pass band, and the reception-side filter has a second pass band. The reception-side filter is connected to the antenna terminal through the inductance element. A center frequency of the second pass band is higher than a center frequency of the first pass band. The reception-side filter includes parallel arm resonance portions including a first parallel arm resonance portion connected closest to the inductance element. An electrostatic capacitance of the first parallel arm resonance portion is larger than an electrostatic capacitance of any other parallel arm resonance portions.

In accordance with an embodiment, an RF system includes a transmit path having a transmit RF filter and an adjustable transmit phase shifter/matching network coupled between the transmit RF filter and a transmit antenna port, where the adjustable transmit phase shifter/matching network is configured to transform an impedance of the transmit RF filter at a receive frequency from a first lower impedance to a first higher impedance at the transmit antenna port; and a receive path having a receive RF filter and an adjustable receive phase shifter/matching network coupled between the receive RF filter and a receive antenna port, where the adjustable receive phase shifter/matching network is configured to transform an impedance of the receive RF filter at a transmit frequency from a second lower impedance to a second higher impedance at the receive antenna port.