A resonator device includes: a resonator element that has a first surface on which a first mount electrode and a second mount electrode are disposed, and a second surface; a base that has a third surface which faces the first surface of the resonator element and on which a first base electrode and a second base electrode are disposed; a lid that has a fourth surface which faces the second surface of the resonator element; a first metal bump by which the first mount electrode and the first base electrode are bonded; a second metal bump by which the second mount electrode and the second base electrode are bonded; and a bonding member by which the second surface and the fourth surface are bonded. A loss tangent of the bonding member is larger than a loss tangent of the first metal bump and the second metal bump.

In bulk acoustic wave (BAW) resonators having convex surfaces, an example BAW resonator includes a first electrode, a piezoelectric layer formed on the first electrode, the piezoelectric layer having a convex surface, and a second electrode formed on the convex surface. An example integrated circuit (IC) package includes a BAW resonator in the IC package, the BAW resonator including a piezoelectric layer having a convex surface.

Provided is a bulk acoustic wave resonator. The bulk acoustic wave resonator includes a first electrode, a piezoelectric layer and a second electrode, where the piezoelectric layer is disposed between the first electrode and the second electrode, the piezoelectric layer is provided with at least one slit, and along a direction pointing from the first electrode to the second electrode, the at least one slit penetrates through at least the piezoelectric layer.

Provided is a bulk acoustic wave resonator. The bulk acoustic wave resonator includes an upper electrode, a piezoelectric layer and a lower electrode. The piezoelectric layer is disposed between the upper electrode and the lower electrode. At least one boundary of an orthogonal projection of the piezoelectric layer on the lower electrode includes a plurality of sawtooth structures.

In certain aspects, a chip includes an acoustic resonator, and a mirror under the acoustic resonator. The mirror includes a first plurality of porous silicon layers, and a second plurality of porous silicon layers, wherein the mirror alternates between the first plurality of porous silicon layers and the second plurality of porous silicon layers, and each of the first plurality of porous silicon layers has a higher porosity than each of the second plurality of porous silicon layers.

Acoustic resonator devices and filters are disclosed. An acoustic resonator includes a substrate having a trap-rich region adjacent to a surface and a single-crystal piezoelectric plate having parallel front and back surfaces, the back surface attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm. The single-crystal piezoelectric plate and the IDT are configured such that a radio frequency signal applied to the IDT excites a shear primary acoustic mode within the diaphragm.

A voltage sensor device includes an oscillator unit, the oscillator unit having a tunable bulk acoustic wave (BAW) resonator device and an oscillator core. The voltage sensor device also includes a frequency analyzer configured to obtain frequency measurements for the oscillator unit and to determine a voltage sense value based on a comparison of at least some of the obtained frequency measurements. The voltage sensor device also includes an output interface configured to store or output voltage sense values determined by the frequency analyzer.

A microelectromechanical resonator device is provided having two-dimensional resonant rods. The resonator device has a piezoelectric layer formed with a plurality of alternating rods and trenches. A bottom electrode is in contact with a bottom surface of the piezoelectric layer. A top electrode metal grating of conductive strips is aligned in contact with corresponding rods of the piezoelectric layer.

A filter device is provided that includes a substrate having a surface and a piezoelectric plate supported by the substrate. A plurality of interdigital transducers (IDTs) for multiple resonators are provided that each have interleaved fingers at respective diaphragms of the piezoelectric plate disposed over one or more cavities. Moreover, a first resonator includes a first plurality of interleaved fingers having a first pitch and a second resonator includes a second plurality of interleaved fingers having a second pitch that is different than the first pitch. This configuration adjusts the resonance frequencies of each resonator. Moreover, a dielectric layer may be uniformly disposed over at least one surface of the respective diaphragms of the piezoelectric plate.

An RF filter system includes a plurality of bulk acoustic wave resonators arranged in a circuit having serial and parallel shunt configurations of resonators. Each resonator having a reflector, a support member including a surface, a first electrode including tungsten, overlying the reflector, a piezoelectric film including crystalline aluminum scandium nitride overlapping the first electrode, a second electrode including tungsten overlapping the piezoelectric film and the first electrode, and a passivation layer including silicon nitride overlying the second electrode. Portions of the support member surface of at least one resonator define a cavity region having a portion of the first electrode of the at least one resonator is located within the cavity region. The pass band circuit response has a bandwidth corresponding to a thickness of at least one of the first electrode, piezoelectric film, second electrode, and passivation layer. The system can include single crystal or polycrystalline BAW resonators.