A tunable non-reciprocal frequency limiter with an asymmetric micro-electro-mechanical resonator has two independent transducer ports. One port has a film stack including a 10 nm hafnium zirconium oxide (HZO) and another port has a film stack including a 120 nm aluminum nitride (AlN) film. These film stacks are deposited on top of 70 nm single crystal silicon substrate applying CMOS compatible fabrication techniques. The asymmetric transducer architecture with dissimilar electromechanical coupling coefficients force the resonator into mechanical nonlinearity on actuation with transducer having larger coupling. A proof-of-concept electrically-coupled channel filter is demonstrated with two such asymmetric resonators at ˜253 MHz with individual Q.sub.res of ˜870 and a non-reciprocal transmission ratio (NTR) ˜16 dB and BW.sub.3 dB of 0.25%.

Describe is a resonator that uses ferroelectric (FE) materials in the gate of a transistor as a dielectric. The use of FE increases the strain/stress generated in the gate of the FinFET. Along with the usual capacitive drive, which is boosted with the increased polarization, FE material expands or contacts depending on the applied electric field on the gate of the transistor. As such, acoustic waves are generated by switching polarization of the FE materials. In some embodiments, the acoustic mode of the resonator is isolated using phononic gratings all around the resonator using the metal line above and vias' to body and dummy fins on the side. As such, a Bragg reflector is formed above the FE based transistor.

The present disclosure provides a super-regenerative transceiver with a feedback element having a controllable gain. The super-regenerative transceiver utilizes the controllable gain to improve RF signal data sensitivity and improve RF signal data capture rates. Super-regenerative transceivers described herein permit signal data capture over a broad range of frequencies and for a range of communication protocols. Super-regenerative transceivers described herein are tunable, consume very little power for operation and maintenance, and permit long term operation even when powered by very small power sources (e.g., coin batteries).

A moveable micromachined member of a microelectromechanical system (MEMS) device includes an insulating layer disposed between first and second electrically conductive layers. First and second mechanical structures secure the moveable micromachined member to a substrate of the MEMS device and include respective first and second electrical interconnect layers coupled in series, with the first electrically conductive layer of the moveable micromachined member and each other, between first and second electrical terminals to enable conduction of a first joule-heating current from the first electrical terminal to the second electrical terminal through the first electrically conductive layer of the moveable micromachined member.

Embodiments of multi-frequency excitation are described. In various embodiments, a natural frequency of a device may be determined. In turn, a first voltage amplitude and first fixed frequency of a first source of excitation can be selected for the device based on the natural frequency. Additionally, a second voltage amplitude of a second source of excitation can be selected for the device, and the first and second sources of excitation can be applied to the device. After applying the first and second sources of excitation, a frequency of the second source of excitation can be swept. Using the methods of multi-frequency excitation described herein, new operating frequencies, operating frequency ranges, resonance frequencies, resonance frequency ranges, and/or resonance responses can be achieved for devices and systems.

Embodiments of the invention include a piezoelectric resonator which includes an input transducer having a first piezoelectric material, a vibrating structure coupled to the input transducer, and an output transducer coupled to the vibrating structure. In one example, the vibrating structure is positioned above a cavity of an organic substrate. The output transducer includes a second piezoelectric material. In operation the input transducer causes an input electrical signal to be converted into mechanical vibrations which propagate across the vibrating structure to the output transducer.

A method for manufacturing a resonator that effectively addresses variations in resistivity for each wafer. The method for manufacturing a resonator includes forming a Si oxide film on a surface of a degenerated Si wafer, where the Si oxide film has a thickness set that is based on the doping amount of impurity in the degenerated Si wafer.

A high-temperature drive component for a double-ended tuning fork (DETF). The drive component attaches to a surface of at least one of the tines. The drive component includes at least one piezoelectric trace sandwiched at least partially between two electrical traces. At least one of the tines includes a doped silicon base with drive component located thereon. One of the electrical traces is electrically connected to the doped silicon base and the other is electrically isolated from the doped silicon base.

A method for generating high order harmonic frequencies includes: providing a piezoelectric resonant film; and inputting a driving signal with a single tone frequency for driving the piezoelectric resonant film to oscillate in a non-linear region so as to generate a plurality of high order harmonic frequencies. Therefore, the quantity of the high order harmonic frequencies can be adjusted by applying an electrical controlling method.

A piezoelectric vibrator is a piezoelectric vibrator including a vibration portion. The vibration portion has an n-type Si layer which is a degenerated semiconductor and which has a resistivity of not less than 0.5 mΩcm and not greater than 1.2 mΩcm and preferably not greater than 0.9 mΩcm.