A vibrator that includes a silicon substrate, an electrode facing a surface of the silicon substrate, and a piezoelectric body between the silicon substrate and the electrode and that produces contour vibration in a plane along the surface of the silicon substrate in accordance with a voltage applied to the electrode. The vibrator includes one or more substantially rectangular vibration regions each having a long side parallel to a node of the contour vibration of the piezoelectric body and a short side orthogonal to the node of the contour vibration of the piezoelectric body and corresponding to a half-wavelength of the contour vibration. The resonator satisfies W/T≥4 and y=−0.85×(1/T)+0.57±0.05 where T is the thickness of the silicon substrate, W is the width of the short side of the vibration region, and y is the resistivity of the silicon substrate.

An acoustic resonator includes a piezoelectric stack including a piezoelectric layer having a top surface and a bottom surface, a top electrode layer disposed above the top surface, and a bottom electrode layer disposed below the bottom surface. A number of acoustic wave reflectors are disposed on a side of the bottom electrode layer opposite the piezoelectric layer. Each acoustic wave reflector includes a high acoustic impedance layer and may include a low acoustic impedance layer. The acoustic resonator may include a tether that extends laterally to a stacking direction of the layers of the piezoelectric stack. A supporting structure may be coupled to the tether opposite the acoustic resonator for anchoring the acoustic resonator. A mirror, one or more phononic crystals, or both may be positioned on proximate the tether opposite the acoustic resonator to avoid resonant waves from exiting the acoustic resonator in use.

A micromechanical vibrasolator isolates vibration of a micromechanical resonator and includes: phononic bandgap mirrors, monophones connected serially; phonophore arms in an alternating sequence of phonophore arm-monophone-phonophore arm; abutments in acoustic communication with the phononic bandgap mirrors; wherein the micromechanical resonator is interposed between the phononic bandgap mirrors with phononic bandgap mirror arranged in parallel on opposing sides of the micromechanical resonator arranged perpendicular to a direction of vibration of an in-plane vibrational mode of the micromechanical resonator.

There is disclosed acoustic resonators and filter devices. An acoustic resonator device includes a piezoelectric plate, a portion of the piezoelectric plate forming a diaphragm, a thickness of the piezoelectric plate is greater than or equal to 300 nm and less than or equal to 500 nm, and an interdigital transducer (IDT) with interleaved fingers of the IDT on the diaphragm. The piezoelectric plate and the IDT are configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the diaphragm.

There is disclosed acoustic resonators and filter devices. An acoustic resonator includes a single-crystal piezoelectric plate having front and back surfaces, a portion of the piezoelectric plate forming a diaphragm. A thickness of the piezoelectric plate is greater than or equal to 300 nm and less than or equal to 500 nm. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm. The piezoelectric plate and the IDT are configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the diaphragm. The interleaved fingers of the IDT are substantially molybdenum. The diaphragm is contiguous with the piezoelectric plate around at least 50% of the IDT.

Acoustic resonators and filter devices, and method of making acoustic resonators and filter devices. An acoustic resonator includes a substrate having a surface and a piezoelectric plate having front and back surfaces, the back surface attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm. The interleaved fingers have an irregular hexagon cross-sectional shape.

System and methods for a hollow-disk radial-contour mode resonator structure. The hollow disk reduces the dynamic mass and stiffness of the structure. Since electromechanical coupling C.sub.x/C.sub.o goes as the reciprocal of mass and stiffness, the hollow disk structure has a considerably stronger electromechanical coupling than a solid one at the same frequency, and thus raises C.sub.x/C.sub.o without excessive gap-scaling. Several embodiments of hollow disk resonators are detailed, including asymmetric and symmetric disk configurations.

A resonator system is provided in which a combined overtone resonator device is excited with a two-dimensional mode of mechanical vibration in a cross sectional plane of a piezoelectric plate in response to an alternating voltage applied through an interdigitated electrode. The cross sectional plane extends along the width direction and the thickness direction, and the two-dimensional mode of mechanical vibration is a two-dimensional combined overtone mode of second and third order asymmetrical Lamb-wave overtones.

A suspended device structure comprises a substrate, a cavity disposed in a surface of the substrate, and a device suspended entirely over a bottom of the cavity. The device is a piezoelectric device and is suspended at least by a tether that physically connects the device to the substrate. The tether has a non-linear centerline. A wafer can comprise a plurality of suspended device structures.

A suspended device structure comprises a substrate, a cavity disposed in a surface of the substrate, and a device suspended entirely over a bottom of the cavity. The device is a piezoelectric device and is suspended at least by a tether that physically connects the device to the substrate. The tether has a non-linear centerline. A wafer can comprise a plurality of suspended device structures. A device structure can comprise a device over a sacrificial portion or cavity and a tether with a tether opening extending to the sacrificial portion or cavity. The tether or tether opening can have a T shape. The tether can have a tether length at least one third as large as a device length and the device can have a device length at least twice as large as a device width.