The invention provides a filter device, an RF front-end device and a wireless communication device. The filter device comprises a substrate, at least one resonance device, a passive device and a connector, wherein the at least one resonance device has a first side and a second side opposite to the first side, the substrate is located on the first side, and the passive device is located on the second side. The at least one resonance device is connected to the passive device through the connector. The RF filter device formed by integrating the resonance device (such as an SAW resonance device or a BAW resonance device) and the passive device (such as an IPD) in one die can broaden the passband width, has a high out-of-band rejection, and occupies less space in an RF front-end chip.

This invention discloses a acoustic surface wave filter in the field of acoustic surface wave filters. The acoustic surface wave filter consists of two different piezoelectric substrates, a series resonator group is made on one piezoelectric substrate, and a parallel resonators group is made on the other; The series and parallel resonator groups on the piezoelectric substrates form a trapezoidal structure; the series resonator group is connected with the parallel resonator group; in which the series resonator group is composed of several series resonators and electrodes, and the parallel resonator group is composed of several parallel resonators and electrodes; as a result, the problems that the present acoustic surface wave filters are difficult to satisfy different relative bandwidths and better rectangle coefficient simultaneously are solved; and the effects of increasing the relative bandwidth of the acoustic surface wave filter, reducing the insertion loss and optimizing the rectangle coefficient are achieved.

A surface acoustic wave device includes a piezoelectric substrate including principal surfaces and an IDT electrode on a first principal surface side of the principal surfaces, and the first principal surface is a polarization positive potential surface of the piezoelectric substrate.

A compound acoustic wave filter device comprises a support substrate having an including two or more circuit connection pads. An acoustic wave filter includes a piezoelectric filter element and two or more electrodes. The acoustic wave filter is micro-transfer printed onto the support substrate. An electrical conductor electrically connects one or more of the circuit connection pads to one or more of the electrodes.

An acoustic wave device includes a mounting substrate, and an acoustic wave element chip. The mounting substrate includes a first major surface with an electrode land thereon, and a second major surface facing the first major surface. The acoustic wave element chip includes a piezoelectric substrate including a major surface, and a functional electrode and a bump located over the major surface of the piezoelectric substrate. The bump is joined to the electrode land. A heat radiation pattern is located over the first major surface of the mounting substrate and located within a region facing the functional electrode of the acoustic wave element chip. The heat radiation pattern is connected to an internal layer portion of the mounting substrate between the first and second major surfaces, and not electrically connected to the electrode land on the first major surface.

An electronic device according to an embodiment includes: an antenna, a filter configured to pass a signal of a specific frequency band among signals transmitted and received through the antenna, and a processor configured to control the filter to pass the signal of the specific frequency band. The filter includes: a first substrate, a second substrate facing the first substrate, a first group of electrodes disposed inside the first substrate, a second group of electrodes disposed inside the second substrate, a first transducer electrode including a first group of lines, a second transducer electrode including a second group of lines disposed to alternate with the first group of lines, and a power supply configured to apply voltages to the first group of electrodes and the second group of electrodes. The processor is configured to cause at least one of the second group of lines to be separated from the first substrate, by controlling the power supply based on a frequency of a signal to be passed through the filter.

An acoustic-wave ladder filter has a first port, a second port and a ground terminal, and includes a series resonator and a shunt circuit. The series resonator is coupled to and disposed between the first and the second ports in series. The shunt circuit is coupled to and disposed between the series resonator and the grounding terminal, and includes a shunt resonator and a functional circuit. The functional circuit is connected in series with the shunt resonator. The functional circuit includes a resistor having a resistance value. The resistance value is greater than 5 Ohms and is smaller than 50 ohms. The functional circuit may further have an inductance.

An acoustic wave element which can be reduced in size and produced relatively easily, practically used without using harmful substances, and can suppress a surface acoustic wave propagation loss, which has an excellent temperature coefficient of frequency and a velocity dispersion characteristic, and with which an increase in the reflection coefficient of interdigital transducers can be suppressed, and a method for manufacturing the acoustic wave element are provided. The acoustic wave element includes a pair of electrodes provided on both surfaces of a piezoelectric substrate, and a dielectric film provided on a first surface of the piezoelectric substrate so as to cover the electrode. The acoustic wave element alternatively includes interdigital transducers provided on a first surface of the piezoelectric substrate, and a dielectric film provided on the interdigital transducers, a gap between the interdigital transducers, and/or a second surface of the piezoelectric substrate.

Certain aspects of the present disclosure provide a filter. The filter generally includes a series resonator coupled between a first port of the filter and a second port of the filter, and a shunt resonator coupled between a node of the filter and a reference potential node of the filter, the node being coupled between the first port and the second port. The shunt resonator typically includes a first piezoelectric substrate, a first plurality of reflectors disposed above the first piezoelectric substrate, and a first plurality of interdigital transducers (IDTs) disposed above the first piezoelectric substrate and between the first plurality of reflectors, wherein the shunt resonator is configured as a dual mode structure (DMS).

An improved SAW (SAWR) resonator having an improved power durability and heat resistance and a protection to prevent device failure is provided. The SAW resonator has a carrier substrate (S) and an electrode structure (ES, EF) on a piezoelectric material (PM, PL). Further, the resonator has a shunt path (PCPP) parallel to the electrode structure and provided to enable an RF signal to bypass the electrode structure. The shunt path has a temperature dependent conductance with negative temperature coefficient of resistance.