A surface acoustic wave resonator device comprises a substrate supporting: a gateable, electrically conducting layer; an interdigital transducer (IDT); a reflector grating that comprises a plurality of electrically separated fingers; a main ohmic contact; and a gate element. The IDT is configured to be connectable to a ground. The conducting layer is configured to be connectable to the ground via the main ohmic contact, while each of said fingers is electrically connected to a lateral side of the conducting layer. This defines a gateable channel, which extends from the fingers to the ground via the conducting layer and the main ohmic contact. The gate element is electrically insulated from the conducting layer. The gate element is configured to allow an electrical impedance of the gateable channel to be continuously tuned by applying a voltage bias to this gate element with respect to the ground, in operation of the device.

Certain aspects of the present disclosure provide an electroacoustic device and methods for signal processing via the electroacoustic device. One example electroacoustic device generally includes a first surface acoustic wave (SAW) resonator comprising a first apodized interdigital transducer (IDT) disposed between a first busbar and a second busbar, and a second SAW resonator comprising a second apodized IDT disposed between the second busbar and a third busbar, wherein the second busbar is at an angle with respect to at least one of the first busbar or the third busbar.

An acoustic wave device includes a piezoelectric substrate, and an IDT electrode on the piezoelectric substrate, and the IDT electrode includes an intersection region in which first and second electrode fingers overlap each other in an acoustic wave propagation direction, the intersection region includes a central region and first and second low acoustic velocity regions outside the central region on respective sides in an extending direction of the first and second electrode fingers, first and second busbars include first and second cavities, respectively, first and second inner busbar portions on one side of the first and second cavities, and first and second outer busbar portions on another side are connected by first and second connecting portions, and at least one of the first connecting portions and at least one of the second connecting portions are a first wide width connecting portion and a second wide width connecting portion having a width wider than that of each of remaining first and second connecting portions.

An acoustic wave device includes a plurality of interdigital transducer electrodes, in a first interdigital transducer electrode, a first electrode finger includes a wide portion having a greater width in the second direction than a center portion. In the first interdigital transducer electrode, for the first electrode finger, a first distance that is a maximum distance in the second direction between a center line of the center portion in a first direction is shorter than a second distance that is a maximum distance in a second direction between the center line of the center portion and an outer edge, away from a second interdigital transducer electrode, of the wide portion.

An elastic wave device includes a piezoelectric substrate, IDT electrodes disposed on the piezoelectric substrate, a first wiring line, an insulating layer covering at least a portion of the first wiring line, a second wiring line at least a portion of which is disposed on the insulating layer to provide a three-dimensional crossing portion, a peripheral support including a cavity surrounding the IDT electrodes, the first and second wiring lines, and the insulating layer, a partition support disposed in the cavity, and a cover disposed on the peripheral support and the partition support to cover the cavity. The second wiring line includes a step portion electrically connecting a portion of the second wiring line located on the piezoelectric substrate and a portion of the second wiring line located on the insulating layer to each other. The partition support covers the step portion.

An elastic wave apparatus includes a piezoelectric substrate including a main surface and a polarization axis direction having a tilt angle with respect to the main surface, an IDT electrode provided on the main surface, and at least one line on the main surface and between an end edge of the main surface and the IDT electrode. A relationship a≦316|cos(θ)|μm is satisfied where a denotes a distance from the end edge of the main surface to the IDT electrode and b≧28 μm where a dimension of the line along a direction connecting the end edge to the IDT electrode is defined as a width, b denotes the width of the line when one line is provided, and b denotes the sum of the widths of multiple lines when the multiple lines are provided.

In a surface acoustic wave filter, a parallel arm resonator includes an IDT electrode and reflectors. Comb-shaped electrodes of the IDT electrode each include a busbar electrode and electrode fingers connected thereto, and are arranged so that the electrode fingers of the respective comb-shaped electrodes are alternately located in a propagation direction of a surface acoustic wave. The reflectors are provided on both sides of the IDT electrode portion in the propagation direction of the surface acoustic wave so that reflector electrode fingers are parallel or substantially parallel to the electrode fingers. A distance between the electrode finger and the reflector electrode finger which are proximate to each other is about 10% or more and about 20% or less of a main pitch of the electrode fingers.

An acoustic wave device includes a piezoelectric body portion, an interdigital transducer electrode connected to a first terminal and a second terminal, and a reflector connected to the second terminal. In the interdigital transducer electrode, in the interdigital transducer electrode, where, of a group of electrode fingers, the electrode finger located at one end in a second direction is a first end electrode finger and the electrode finger located at another end is a second end electrode finger, the first end electrode finger is located between the reflector and the second end electrode finger in the second direction. An outer busbar portion of one of a first busbar and a second busbar, not connected to the first end electrode finger, is located on an inner side in the second direction relative to a center portion, in a first direction, of the first end electrode finger.

Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed to be in contact with at least one piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam in which, upon actuation, the MEMS beam will turn on the at least one piezoelectric filter structure by interleaving electrodes in contact with the piezoelectric substrate or sandwiching the at least one piezoelectric substrate between the electrodes.

A package that includes a first filter comprising a first polymer, a substrate cap, a second filter comprising a second polymer frame, at least one interconnect, an encapsulation layer and a plurality of through encapsulation vias. The substrate cap is coupled to the first polymer frame such that a first void is formed between the substrate cap and the first filter. The second polymer frame is coupled to the substrate cap such that a second void is formed between the substrate cap and the second filter. The at least one interconnect is coupled to the first filter and the second filter. The encapsulation layer encapsulates the first filter, the substrate cap, the second filter, and the at least one interconnect. The plurality of through encapsulation vias coupled to the first filter.