In an elastic wave resonator, a first IDT electrode, a second IDT electrode, a first reflector, and a second reflector are located on a piezoelectric substrate. The first IDT electrode and the second IDT electrode share a shared bus bar. Between a first terminal and a second terminal, the first IDT electrode and the second IDT electrode are connected in parallel. The shared bus bar and the first reflector are connected to the first terminal. A first bus bar and a second bus bar are connected to the second reflector, and are further connected to the second terminal.

A capacitive element includes a piezoelectric substrate, a first electrode finger extending towards a positive side in a first direction, and a second electrode finger disposed facing and spaced apart from the first electrode finger in a second direction intersecting the first direction, extending towards a negative side in the first direction, and connected to a different potential from the first electrode finger. The first electrode finger includes a first portion extending in the first direction and a second portion extending from the first portion, through a first step portion, and at a different position in the second direction from the first portion. The second electrode finger includes a third portion disposed facing the second portion and extending in the first direction, and a fourth portion extending from the third portion through a second step portion, extending from the second portion in the first direction, and facing the first portion.

An acoustic wave device including an IDT electrode on a piezoelectric film, in which a Z-axis direction of a crystal is different from a direction of a normal to a major surface. An overlap region of the IDT electrode includes a central region and first and second edge regions. First and second dielectric films are stacked between the piezoelectric film and first and second electrode fingers in the first and second edge regions. When an angle between a first side surface of the first dielectric film and a major surface of the piezoelectric film is α1 and an angle between a second side surface of the second dielectric film and the major surface of the piezoelectric film is α2, α1≠α2 between at least one electrode finger of the first and second electrode fingers and the piezoelectric film.

An SAW device 1 includes a piezoelectric substrate 13, an IDT electrode 5 on a first major surface 3a of the piezoelectric substrate 13, a capacitance element 31 which is located on the first major surface 3a and is connected to the IDT electrode 5, and a cover 9 which is superimposed only on the capacitance element 31 between the IDT electrode 5 and the capacitance element 31.

A multiplexer includes a first filter disposed between an antenna common terminal and a first terminal, and a second filter that is disposed between the antenna common terminal and a second terminal and that has higher passband frequencies than the first filter. The second filter includes IDTs that are longitudinally coupled. Among IDT electrodes in the IDTs, first IDT electrodes are connected to the antenna common terminal side, and second IDT electrodes are connected to the second terminal side. The first and second IDT electrodes have different main pitches of the electrode fingers. At least one of the second IDT electrodes out of all of the electrode fingers has a maximum main pitch.

An acoustic wave device, and an acoustic wave filter and electronics module including the same. The acoustic wave device comprises a first interdigital transducer electrode having a first bus bar and a first plurality of electrode fingers extending from the first bus bar, the first bus bar having a width of 3 μm or less in a direction parallel to the extension of the first plurality of electrode fingers, and a second interdigital transducer electrode having a second bus bar and a second plurality of electrode fingers extending from the second bus bar and interleaved with the first plurality of electrode fingers, the second bus bar having a width of 3 μm or less in a direction parallel to the extension of the second plurality of electrode fingers. The acoustic wave device allows for improvements in power durability when used in an acoustic wave filter, without an increase in size of the acoustic wave filter.

An elastic wave includes a piezoelectric substrate having a polarization direction denoted by an arrow Px, and first and second IDT electrodes arranged on the substrate in an elastic wave propagation direction with a shared reflector therebetween. A first bus bar of the first IDT electrode and a first end portion bus bar of a second reflector are connected to a wiring electrode to define a first terminal. A second bus bar of the first IDT electrode and a second end portion bus bar of the shared reflector are connected to each other to define a second terminal. A first end portion bus bar and a first bus bar are electrically connected to each other. A second bus bar and a second end portion bus bar are electrically connected to each other, and the first and second IDT electrodes and are connected in parallel between the first and second terminals.

The present invention relates to a surface acoustic wave element and a method of manufacturing the same, and more specifically, to a surface acoustic wave element and a method of manufacturing the same, the element including a piezoelectric substrate; a plurality of IDT electrodes formed on the piezoelectric substrate; a plurality of resonator electrodes formed on the piezoelectric substrate; a wiring metal layer formed as a wiring area to electrically connect the plurality of IDT electrodes and the plurality of resonator electrodes; and an insulation layer formed on the piezoelectric substrate, the plurality of IDT electrodes, the plurality of resonator electrodes and the wiring metal layer.

An acoustic wave device includes: a support substrate; a piezoelectric substrate bonded to the support substrate; a first acoustic wave element formed on the piezoelectric substrate; a frame formed on the support substrate to surround the first acoustic wave element; and a substrate formed on the frame so that a cavity to which the first acoustic wave element is exposed is formed above the piezoelectric substrate, wherein a difference in linear expansion coefficient between the support substrate and the substrate in a first direction in a surface direction of the piezoelectric substrate is less than a difference in linear expansion coefficient between the support substrate and the piezoelectric substrate in the first direction, and the piezoelectric substrate remains in a region where the first acoustic wave element is formed and is removed in a region where the frame is formed.

A vibration device includes a base including a semiconductor substrate and through electrodes that pass through the portion between first and second surfaces of the semiconductor substrate, and a vibrator fixed to the first surface via an electrically conductive joining member. The following components are placed at the second surface: an oscillation circuit that is electrically coupled to the vibrator via the through electrodes and generates an oscillation signal by causing the vibrator to oscillate, a temperature sensor circuit, a temperature compensation circuit that performs temperature compensation on the oscillation signal, and an output buffer circuit that outputs a clock signal based on the oscillation signal. Dsx1<Dbx1, a distance between the output buffer circuit and one of the through electrodes is Dbx1, a distance between the temperature sensor circuit and the other through electrode is Dsx1.