A method of printing comprises providing a component source wafer comprising components, a transfer device, and a patterned substrate. The patterned substrate comprises substrate posts that extend from a surface of the patterned substrate. Components are picked up from the component source wafer by adhering the components to the transfer device. One or more of the picked-up components are printed to the patterned substrate by disposing each of the one or more picked-up components onto one of the substrate posts, thereby providing one or more printed components in a printed structure.

The present disclosure provides a film bulk acoustic resonator and its fabrication method, a filter, and a radio frequency communication system. The film bulk acoustic resonator includes a first substrate and a support layer disposed on the first substrate, where a cavity is formed in the support layer; a piezoelectric stacked layer covering the cavity, where the piezoelectric stacked layer includes an active resonance region and an inactive resonance region surrounding the active resonance region; and at least two trenches, arranged at a junction of the active resonance region and the inactive resonance region to define a range of the active resonance region. The at least two trenches include a first trench and a second trench; the second trench passes through the second electrode layer and the piezoelectric layer; and the first trench passes the first electrode and the piezoelectric layer and is connected to the cavity.

Aspects of this disclosure relate to a bulk acoustic wave device with a floating raised frame structure. The bulk acoustic wave device includes a first electrode, a second electrode, a piezoelectric layer positioned between the first electrode and the second electrode, and a floating raised frame structure positioned on a same side of the piezoelectric layer as the first electrode and spaced apart from the first electrode. The floating raised frame structure is at a floating potential. The bulk acoustic wave device can suppress a raised frame mode. Related methods, filters, multiplexers, radio frequency front ends, radio frequency modules, and wireless communication devices are disclosed.

A substantially rectangular pedestal for mounting a blank is provided, wherein angled portions at four corners of the main body of the pedestal is formed in a shape that is cut out obliquely.

A bulk acoustic wave resonator includes: a first electrode; a piezoelectric layer disposed on at least a portion of the first electrode; and a second electrode disposed on the piezoelectric layer. The piezoelectric layer contains a dopant, and a value of [a thickness (nm) of the piezoelectric layer x a concentration (at %) of the dopant]/100 is less than or equal to 80.

An acoustic wave device includes a support with a thickness in a first direction, a piezoelectric layer in the first direction, and an interdigital transducer electrode in the first direction with first electrode fingers in a second direction, a first busbar electrode connected to the first electrode fingers, second electrode fingers in the second direction and facing corresponding ones of the first electrode fingers in a third direction, and a second busbar electrode connected to the second electrode fingers. The support has a hollow adjacent to the piezoelectric layer and at least partially overlapping the interdigital transducer electrode. The piezoelectric layer has a first through hole penetrating the piezoelectric layer between at least one first electrode finger and the second busbar electrode. The first through hole communicates with the hollow, has a length in the third direction, and overlaps a portion of a second electrode finger.

Film bulk acoustic resonator (FBAR) is provided. An exemplary FBAR includes a substrate; a first insulating material layer on the substrate, the first insulating material layer containing a first cavity; a second insulating material layer on the first insulating material layer, the second insulating material layer containing a second cavity and a third cavity spaced apart from the second cavity, the second cavity and the third cavity both in communication with the first cavity; a resonator sheet covering the second cavity and partially extending over the second insulating material layer; a third insulating material layer over the second insulating material layer and the resonator sheet, the third insulating material layer containing a fourth cavity, the fourth cavity in communication with the third cavity, and the fourth cavity partially overlapping the second cavity; and a capping layer on the third insulating material layer.

Methods for forming a film bulk acoustic resonator (FBAR) are provided. In the method, formation of several mutually overlapped and hence connected sacrificial material layers above and under a resonator sheet facilitates the removal of the sacrificial material layers. Cavities left after the removal overlap at a polygonal area with non-parallel sides. This reduces the likelihood of boundary reflections of transverse parasitic waves causing standing wave resonance in the FBAR, thereby enhancing its performance in parasitic wave crosstalk. Further, according to the disclosure, the FBAR is enabled to be integrated with CMOS circuitry and hence exhibits higher reliability.

An acoustic resonator includes: a central portion; an extension portion extended outwardly of the central portion; a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on a substrate, in the central portion; and an insertion layer disposed below the piezoelectric layer in the extension portion, wherein the piezoelectric layer includes a piezoelectric portion disposed in the central portion, and a bent portion disposed in the extension portion and extended from the piezoelectric portion at an incline depending on a shape of the insertion layer.

Aspects of this disclosure relate to a bulk acoustic wave device with a floating raised frame structure. The bulk acoustic wave device includes a first electrode, a second electrode, a piezoelectric layer positioned between the first electrode and the second electrode, and a floating raised frame structure positioned on a same side of the piezoelectric layer as the first electrode and spaced apart from the first electrode. The floating raised frame structure is at a floating potential. The bulk acoustic wave device can suppress a raised frame mode. Related methods, filters, multiplexers, radio frequency front ends, radio frequency modules, and wireless communication devices are disclosed.