A micro-transfer printable transverse bulk acoustic wave filter comprises a piezoelectric filter element having a top side, a bottom side, a left side, and a right side disposed over a sacrificial portion on a source substrate. A top electrode is in contact with the top side and a bottom electrode is in contact with the bottom side. A left acoustic mirror is in contact with the left side and a right acoustic mirror is in contact with the right side. The thickness of the transverse bulk acoustic wave filter is substantially less than its length or width and its length can be greater than its width. The transverse bulk acoustic wave filter can be disposed on, and electrically connected to, a semiconductor substrate comprising an electronic circuit to control the transverse bulk acoustic wave filter and form a composite heterogeneous device that can be micro-transfer printed.

A piezoelectric vibrator that includes a piezoelectric film with a pair of electrodes disposed on opposing sides of the piezoelectric film. Moreover, the vibrator includes first and second adjustment films with the first adjustment film covering the first surface of the piezoelectric film in a first region and the second adjustment film covering the first surface of the piezoelectric film in a second region that is different from the first region. Moreover, the second region of the piezoelectric film has a greater displacement than the first region when the piezoelectric vibrator vibrates.

A BAW device includes a substrate and a piezoelectric element formed on a surface of the substrate. The substrate has a plurality of elastic wave diffusing regions disposed therein for diffusing an elastic wave, the elastic wave diffusing regions being formed by modifying the inside of the substrate with a laser beam.

Methods, systems, and devices are described for isolating a crystal oscillator assembly from shock and/or vibration inputs. A system may include one or more vibration isolators coupled between the crystal oscillator assembly and the base structure, and each of the vibration isolators may include a spring material layer and a damping material layer. The spring material layer may provide a spring force between the crystal oscillator assembly and the base structure. The damping material layer may be adhered to at least one side of the spring material layer, and may provide a damping force between the crystal oscillator assembly and the base structure. Some vibration isolators may further include a constraint layer adhered to the damping material layer, such that the damping material layer is coupled between the constraint layer and the spring material layer.

A composite device includes a silicon substrate including first and second main surfaces on opposite sides, a semiconductor device adjacent to at least one of the first and second main surfaces, and an acoustic wave device including a silicon oxide film directly or indirectly disposed on the first main surface of the silicon substrate, a piezoelectric layer directly disposed on the silicon oxide film, and an IDT disposed on the piezoelectric layer. The piezoelectric layer has a thickness of not greater than about 2.5 where is a wavelength defined by an electrode finger pitch of the IDT.

A tuneable band pass filter (BPF), including a first transmission line electromagnetically coupled to a second transmission line, wherein a length of at least one of the first transmission and the second transmission line is adjustable, and wherein a frequency of a passband of the BPF is directly related to the length of the adjustable transmission line.

An acoustic resonator includes a substrate, a center portion, an extending portion, and a barrier layer. A first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on the substrate in the central portion. The extending portion is configured to extend from the center portion, and includes an insertion layer disposed below the piezoelectric layer. The barrier layer is disposed between the first electrode and the piezoelectric layer.

An acoustic wave device includes a substrate comprising one surface on which an acoustic wave generator and at least one ground pad are included; a support component formed of an insulating material and disposed on the substrate along a circumference of the acoustic wave generator; and a shielding member electrically connected to the ground pad and blocking reception or emission of electromagnetic waves at the acoustic wave generator.

Aspects of this disclosure relate to a bulk acoustic wave device with a floating raised frame structure. The bulk acoustic wave device includes a first electrode, a second electrode, a piezoelectric layer positioned between the first electrode and the second electrode, and a floating raised frame structure positioned on a same side of the piezoelectric layer as the first electrode and spaced apart from the first electrode. The floating raised frame structure is at a floating potential. The bulk acoustic wave device can suppress a raised frame mode. Related methods, filters, multiplexers, radio frequency front ends, radio frequency modules, and wireless communication devices are disclosed.

Methods, systems, and devices are described for isolating a crystal oscillator assembly from shock and/or vibration inputs. A system may include one or more vibration isolators coupled between the crystal oscillator assembly and the base structure, and each of the vibration isolators may include a spring material layer and a damping material layer. The spring material layer may provide a spring force between the crystal oscillator assembly and the base structure. The damping material layer may be adhered to at least one side of the spring material layer, and may provide a damping force between the crystal oscillator assembly and the base structure. Some vibration isolators may further include a constraint layer adhered to the damping material layer, such that the damping material layer is coupled between the constraint layer and the spring material layer.