Patent classifications
H03H9/0538
Monolithic integrated device
Monolithic integrated device having an architecture that allows an acoustic device to transduce either surface acoustic waves or bulk acoustic waves, comprising: a substrate layer being the base of the device; an inter-layer dielectric disposed on top of the substrate layer; an electronic circuitry substantially formed in the inter-layer dielectric and supported by the substrate layer, the electronic circuitry comprises a plurality of metal layers; and a piezoelectric layer being sandwiched between a top electrode and a bottom electrode within the inter-layer dielectric. The top electrode is an upper metal layer belonging to the electronic circuitry and the bottom electrode is a lower metal layer belonging to the electronic circuitry. To transduce the bulk acoustic waves, the inter-layer dielectric is formed with a top cavity above the top electrode and a bottom cavity below the bottom electrode.
Electronic device comprising surface acoustic wave filter
An electronic device according to an embodiment includes: an antenna, a filter configured to pass a signal of a specific frequency band among signals transmitted and received through the antenna, and a processor configured to control the filter to pass the signal of the specific frequency band. The filter includes: a first substrate, a second substrate facing the first substrate, a first group of electrodes disposed inside the first substrate, a second group of electrodes disposed inside the second substrate, a first transducer electrode including a first group of lines, a second transducer electrode including a second group of lines disposed to alternate with the first group of lines, and a power supply configured to apply voltages to the first group of electrodes and the second group of electrodes. The processor is configured to cause at least one of the second group of lines to be separated from the first substrate, by controlling the power supply based on a frequency of a signal to be passed through the filter.
VIBRATOR DEVICE, OSCILLATOR, ELECTRONIC DEVICE, AND VEHICLE
A vibrator device includes a circuit element, which has a first terminal and is a quadrangle in plan view, a vibrator, which is disposed on an active surface and is a quadrangle in plan view, a base, on which the circuit element is disposed and which has a second terminal, and a wire which connects the first terminal and the second terminal together. In plan view of the circuit element, at least one side of the vibrator is disposed along a direction where the one side intersects each of two adjacent sides of the circuit element, and the vibrator does not overlap the first terminal.
PIEZOELECTRIC OSCILLATOR AND PIEZOELECTRIC OSCILLATION DEVICE
A piezoelectric oscillator includes a base member; a piezoelectric resonator mounted on an upper surface of the base member; a lid member joined to the upper surface so as to hermetically seal the piezoelectric resonator; an electronic component mounted on a lower surface of the base member; a mounting frame joined to the lower surface so as to surround the electronic component; and a heat conduction path disposed on the base member and/or the mounting frame. The heat conduction path is electrically isolated from both of the piezoelectric resonator and the electronic component in the piezoelectric oscillator and has heat conductivity. The heat conduction path includes a first heat conduction portion inside where the base member and the mounting frame overlap, and a second heat conduction portion connected to the first heat conduction portion and disposed outside where the base member and the mounting frame overlap.
Temperature compensated compound resonator
The invention concerns microelectromechanical resonators. In particular, the invention provides a resonator comprising a support structure, a doped semiconductor resonator suspended to the support structure by at least one anchor, and actuator for exciting resonance into the resonator. According to the invention, the resonator comprises a base portion and at least one protrusion extending outward from the base portion and is excitable by said actuator into a compound resonance mode having temperature coefficient of frequency (TCF) characteristics, which are contributed by both the base portion and the at least one protrusion. The invention enables simple resonators, which are very well temperature compensated over a wide temperature range.
MONOLITHIC INTEGRATED DEVICE
Monolithic integrated device having an architecture that allows an acoustic device to transduce either surface acoustic waves or bulk acoustic waves, comprising: a substrate layer being the base of the device; an inter-layer dielectric disposed on top of the substrate layer; an electronic circuitry substantially formed in the inter-layer dielectric and supported by the substrate layer, the electronic circuitry comprises a plurality of metal layers; and a piezoelectric layer being sandwiched between a top electrode and a bottom electrode within the inter-layer dielectric. The top electrode is an upper metal layer belonging to the electronic circuitry and the bottom electrode is a lower metal layer belonging to the electronic circuitry. To transduce the bulk acoustic waves, the inter-layer dielectric is formed with a top cavity above the top electrode and a bottom cavity below the bottom electrode.
ELECTRONIC COMPONENT PACKAGE, OSCILLATOR, ELECTRONIC APPARATUS, AND VEHICLE
An electronic component package includes: a first side surface terminal provided on a first side surface; a first external connection terminal provided on a mounting surface (rear surface); a first recess electrode provided in a first recess and electrically connected with the first external connection terminal; and a first branch wiring disposed on a front surface of a middle plate and including a first end exposed in the first side surface between the first side surface terminal and the first recess electrode. The relation: L11>L12 is satisfied, where L11 is the distance between the first end and the first recess electrode and L12 is the distance between the first end and the first side surface terminal.
Surface mount type quartz crystal device
A surface mount type quartz crystal device according to a first aspect of the disclosure includes a ceramic package, a pedestal blank, a quartz-crystal vibrating piece. The pedestal blank is placed within the ceramic package via a conductive adhesive. The quartz-crystal vibrating piece is placed on the pedestal blank. The conductive adhesive is formed along an outer peripheral side of the pedestal blank so as to avoid overlap with the excitation electrode viewed in a normal direction of the excitation electrode. The pedestal blank is formed to avoid a region where a distance from the quartz-crystal vibrating piece is equal to or smaller than a size of a clearance between the pedestal blank and the quartz-crystal vibrating piece at the outer peripheral side, in a region where the excitation electrode faces at the pedestal blank side viewed in the normal direction.
BULK ACOUSTIC WAVE FILTER
A bulk acoustic wave filter includes a substrate, a first electrode and a second electrode disposed on the substrate, a piezoelectric layer including a piezoelectric material, the piezoelectric layer disposed between the first and second electrodes, and a passive element disposed on one surface of a housing. The housing is coupled to the substrate to accommodate the piezoelectric layer, the first electrode and the second electrode.
GUIDED WAVE DEVICES WITH SELECTIVELY THINNED PIEZOELECTRIC LAYERS
A micro-electrical-mechanical system (MEMS) guided wave device includes a plurality of electrodes arranged below a piezoelectric layer (e.g., either embedded in a slow wave propagation layer or supported by a suspended portion of the piezoelectric layer) and configured for transduction of a lateral acoustic wave in the piezoelectric layer. The piezoelectric layer permits one or more additions or modifications to be made thereto, such as trimming (thinning) of selective areas, addition of loading materials, sandwiching of piezoelectric layer regions between electrodes to yield capacitive elements or non-linear elastic convolvers, addition of sensing materials, and addition of functional layers providing mixed domain signal processing utility.