A micro-electrical-mechanical system (MEMS) guided wave device includes a plurality of electrodes arranged below a piezoelectric layer (e.g., either embedded in a slow wave propagation layer or supported by a suspended portion of the piezoelectric layer) and configured for transduction of a lateral acoustic wave in the piezoelectric layer. The piezoelectric layer permits one or more additions or modifications to be made thereto, such as trimming (thinning) of selective areas, addition of loading materials, sandwiching of piezoelectric layer regions between electrodes to yield capacitive elements or non-linear elastic convolvers, addition of sensing materials, and addition of functional layers providing mixed domain signal processing utility.

A micro-electrical-mechanical system (MEMS) guided wave device includes a plurality of electrodes arranged below a piezoelectric layer (e.g., either embedded in a slow wave propagation layer or supported by a suspended portion of the piezoelectric layer) and configured for transduction of a lateral acoustic wave in the piezoelectric layer. The piezoelectric layer permits one or more additions or modifications to be made thereto, such as trimming (thinning) of selective areas, addition of loading materials, sandwiching of piezoelectric layer regions between electrodes to yield capacitive elements or non-linear elastic convolvers, addition of sensing materials, and addition of functional layers providing mixed domain signal processing utility.

A micro-electrical-mechanical system (MEMS) guided wave device includes a plurality of electrodes arranged below a piezoelectric layer (e.g., either embedded in a slow wave propagation layer or supported by a suspended portion of the piezoelectric layer) and configured for transduction of a lateral acoustic wave in the piezoelectric layer. The piezoelectric layer permits one or more additions or modifications to be made thereto, such as trimming (thinning) of selective areas, addition of loading materials, sandwiching of piezoelectric layer regions between electrodes to yield capacitive elements or non-linear elastic convolvers, addition of sensing materials, and addition of functional layers providing mixed domain signal processing utility.

A micro-electrical-mechanical system (MEMS) guided wave device includes a plurality of electrodes arranged below a piezoelectric layer (e.g., either embedded in a slow wave propagation layer or supported by a suspended portion of the piezoelectric layer) and configured for transduction of a lateral acoustic wave in the piezoelectric layer. The piezoelectric layer permits one or more additions or modifications to be made thereto, such as trimming (thinning) of selective areas, addition of loading materials, sandwiching of piezoelectric layer regions between electrodes to yield capacitive elements or non-linear elastic convolvers, addition of sensing materials, and addition of functional layers providing mixed domain signal processing utility.

A resonator element includes a quartz crystal substrate in which a plane including X and Z axes is set as a main plane and a direction oriented along a Y axis is a thickness direction. The quartz crystal substrate includes a first region in which thickness shear vibration is generated, a second region that has a thickness thinner than the first region, and first protrusions that are disposed between one pair of electrode pads disposed to be lined in a direction oriented along a Z axis on a mounted side of the second region. When Lx is a length of the first protrusions along the X axis and is a wavelength of flexural vibration of the quartz crystal substrate, a relation of /2(2n+1)0.1Lx/2(2n+1)+0.1 (where n is a positive integer) is satisfied.

A wafer-level chip-scale package includes a body, a conductive via passing through the body, a contact bump formed at a lower portion of the body and in electrical connection with a lower end of the conductive via, a piezoelectric substrate directly bonded to an upper end of the conductive via, and a cavity defined between a portion of the body and the piezoelectric substrate.

A resonator circuit, a filter with improved tunability, and a duplexer with improved tunability are disclosed. In an embodiment, the resonator circuit includes a resonator, a Z transformer and an impedance circuit, wherein the impedance circuit has an impedance Z and includes an impedance element, wherein the Z transformer is interconnected between the resonator and the impedance circuit, and wherein the Z transformer transforms the impedance Z to a new impedance ZZ and comprises a transformation circuit selected from: a generalized impedance converter (GIC), an negative impedance converter (NIC), a generalized impedance inverter (GII) and an negative impedance inverter (NII).

An acoustic wave device includes: a first chip that includes a first substrate, and a first filter formed on a first surface of the first substrate; and a second chip that includes a second substrate, and a second filter formed on a second surface of the second substrate, the second surface being located in a plane different from the first surface.

An electronic component includes a first main body including a plurality of dielectric layers stacked together, and a second main body mounted to the first main body. The second main body includes a first circuit section and a second circuit section that are each constituted by using at least one acoustic wave element and are electrically separated from each other. The first main body includes first to third ground conductor lavers located between the first and second circuit sections when seen in a Z direction.

A resonator includes: a resonator element including a quartz crystal substrate that includes a first area performing a thickness-shear vibration and a second area with a thickness thinner than the first area and located around the first area; and a base substrate to which the second area of the resonator element on one edge side thereof is attached via a bonding material. The quartz crystal substrate has a major surface that is a surface including an X-axis and a Z-axis, and has a thickness in a direction along a Y-axis. The resonator satisfies the relation: 1.5Xp where Xp is the maximum length of an area of the second area where the bonding material is bonded along the X-axis in a plan view and is the wavelength of a flexural vibration occurring in the quartz crystal substrate.