A resonator device includes: a resonator element; a first package that accommodates the resonator element; and a second package in which the first package is accommodated and fixed. The first package includes a base substrate that has a first surface on which the resonator element is disposed and a second surface which is in a front-back relationship with the first surface, and that contains single crystal silicon, an integrated circuit that is provided on the first surface or the second surface and that includes a temperature sensor circuit and a heater circuit, and a lid that is bonded to the base substrate such that the resonator element is accommodated between the lid and the base substrate.

A temperature compensated oscillation circuit includes an oscillation circuit that oscillates a resonator, a fractional N-PLL circuit that multiplies frequency of an oscillation signal which is output by the oscillation circuit, on the basis of a frequency division ratio which is input, a temperature measurement unit that measures temperature, and a storage unit that stores a temperature correction table for correcting frequency temperature characteristics of the oscillation signal, in which the frequency division ratio of the fractional N-PLL circuit is set on the basis of a measurement value obtained by the temperature measurement unit and the temperature correction table.

There is configured an oscillator characterized by including an outer package having a housing space, an inner package housed in the housing space, a resonator element housed in the inner package, a heater element housed in the housing space, and fixed to the inner package, an oscillation circuit configured to oscillate the resonator element, a conducting member configured to electrically couple the inner package and the heater element to each other, and a first bonding wire configured to couple the heater element and the outer package to each other, and configured to electrically couple the conducting member and the outer package to each other.

There is configured an oscillator characterized by including an outer package having a housing space, an inner package housed in the housing space, a resonator element housed in the inner package, a heater element housed in the housing space, and fixed to the inner package, an oscillation circuit configured to oscillate the resonator element, a conducting member configured to electrically couple the inner package and the heater element to each other, and a first bonding wire configured to couple the heater element and the outer package to each other, and configured to electrically couple the conducting member and the outer package to each other.

One or more heating elements are provided to heat a MEMS component (such as a resonator) to a temperature higher than an ambient temperature range in which the MEMS component is intended to operate—in effect, heating the MEMS component and optionally related circuitry to a steady-state “oven” temperature above that which would occur naturally during component operation and thereby avoiding temperature-dependent performance variance/instability (frequency, voltage, propagation delay, etc.). In a number of embodiments, an IC package is implemented with distinct temperature-isolated and temperature-interfaced regions, the former bearing or housing the MEMS component and subject to heating (i.e., to oven temperature) by the one or more heating elements while the latter is provided with (e.g., disposed adjacent) one or more heat dissipation paths to discharge heat generated by transistor circuitry (i.e., expel heat from the integrated circuit package).

A resonator includes: a resonator element that includes a base portion and a resonating arm; and a base. When n is one natural number of 2 or greater and j is 1 or greater and a natural number which is less than or equal to n, the resonator element performs resonations with n inherent resonation modes. In a relationship between arbitrary integers k.sub.j and resonance frequencies f.sub.j corresponding to the n inherent resonation modes, respectively, when f.sub.1 represents the resonance frequency of the main resonation of the resonator element and a normalized frequency difference Δf is defined by

[00001]$\Delta .Math..Math.f\equiv \left(\frac{\underset{j=2}{\overset{n}{.Math.}}.Math..Math.k_j.Math.f_j}{-k_1}-f_1\right)/f_1,$

a relationship of |Δf|≧0.03 is satisfied. The arbitrary integers k.sub.j satisfy relationships of 3≦Σ.sub.j=1.sup.n|k.sub.j|≦10 and n≦Σ.sub.j=1.sup.n|k.sub.j|. A ratio of an amount of a change in the resonance frequency of the main resonation, to excitation power that electrically excites the main resonation, is 20 [ppm/μW] or higher.

An oscillator includes a second container as a container in which a vibrator is accommodated, a base substrate on which the second container is mounted, three or more protruding portions provided on the base substrate at positions overlapping the second container in a plan view, and a bonding member configured to bond the second container and at least one of the protruding portions.

A resonator element includes a substrate having a first region performing thickness shear vibration, a second region located in a periphery of the first region and having a smaller thickness than the first region, a fixed end, and a free end opposite to the fixed end in the first region in a plan view. Excitation electrodes are disposed on a front and a rear of the first region and have regions overlapping each other in the plan view. A center of the first region and a center of the regions overlapping each other are located between a center of the substrate and the free end in the plan view. When Cs is a distance between the center of the regions overlapping each other and the center of the substrate in the plan view, a relation of 105 μm<Cs<130 μm is satisfied.

A resonator element includes a substrate having a first region performing thickness shear vibration, a second region located in a periphery of the first region and having a smaller thickness than the first region, a fixed end, and a free end opposite to the fixed end in the first region in a plan view. Excitation electrodes are disposed on a front and a rear of the first region and have regions overlapping each other in the plan view. A center of the first region and a center of the regions overlapping each other are located between a center of the substrate and the free end in the plan view. When Cs is a distance between the center of the regions overlapping each other and the center of the substrate in the plan view, a relation of 105 μm<Cs<130 μm is satisfied.

The disclosure is directed to an electronic device with a solder interconnect and multiple material encapsulant. The electronic device includes a die last assembly with the die assembled to an electronic packaging substrate by a solder interconnect. At least a portion of a first dielectric material and the die are milled or ground, with a second dielectric material applied over an exposed portion of the die. A shield is then positioned over and electrically insulated from the die. Accordingly, such a configuration reduces a thickness or height of an electronic device with shielding and a die last assembly.