An acoustic wave device includes a multilayer substrate including a reverse-velocity surface, a piezoelectric film, a low acoustic velocity material layer, a high acoustic velocity material layer, and an IDT electrode disposed on the piezoelectric film. In the IDT electrode, gap lengths of a first gap between a tip of each of first electrode fingers and a second busbar and a second gap between a tip of each of second electrode fingers and a first busbar are about 0.23λ or shorter, the gap lengths extending in an extension direction of the first and second electrode fingers.

A nonreciprocal microwave transmission device includes a substrate, a transducer on a surface of the substrate and configured to reciprocally convert between electrical signals to acoustic waves, a first piezoelectric material configured to generates and transports acoustic waves from a signal applied to the transducer, and a thin film magnetic material configured to couple to acoustic waves through magnetoelastic coupling so as to have non-reciprocal magnetoelastic coupled acoustic wave transport. Transmission of acoustic waves through the thin film magnetic material is in a direction toward the transducer has a first magnitude and transmission of acoustic waves through the thin film magnetic material in a direction away from the transducer has a second magnitude, the first and second magnitude being significantly different.

A nonreciprocal microwave transmission device includes a substrate, a transducer on a surface of the substrate and configured to reciprocally convert between electrical signals to acoustic waves, a first piezoelectric material configured to generates and transports acoustic waves from a signal applied to the transducer, and a thin film magnetic material configured to couple to acoustic waves through magnetoelastic coupling so as to have non-reciprocal magnetoelastic coupled acoustic wave transport. Transmission of acoustic waves through the thin film magnetic material is in a direction toward the transducer has a first magnitude and transmission of acoustic waves through the thin film magnetic material in a direction away from the transducer has a second magnitude, the first and second magnitude being significantly different.

A surface acoustic wave (SAW) device and methods of making the same are disclosed. The surface acoustic wave device includes a piezoelectric layer coupled to a high acoustic velocity layer at a first surface of the piezoelectric layer. At least one transducer is provided over a second surface of the piezoelectric layer. The at least one transducer comprises a plurality of IDT electrodes that are formed from a substantially two-dimensional (2D) conductive material and configured to propagate a surface acoustic wave having an operating wavelength along the piezoelectric layer.

A surface acoustic wave (SAW) device and methods of making the same are disclosed. The surface acoustic wave device includes a piezoelectric layer coupled to a high acoustic velocity layer at a first surface of the piezoelectric layer. At least one transducer is provided over a second surface of the piezoelectric layer. The at least one transducer comprises a plurality of IDT electrodes that are formed from a substantially two-dimensional (2D) conductive material and configured to propagate a surface acoustic wave having an operating wavelength along the piezoelectric layer.

An electronic component includes a support member, a piezoelectric film, and an interdigital transducer. The support member includes silicon as a primary component. The piezoelectric film is provided directly or indirectly on the support member. The interdigital transducer includes a plurality of electrode fingers. The plurality of electrode fingers are provided side by side separately from each other. The interdigital transducer is provided on the principal surface of the piezoelectric film. The film thickness of the piezoelectric film is about 3.5 λ or less, where λ denotes the wavelength of an acoustic wave determined by the electrode finger pitch of the interdigital transducer. In the support member, the high-impurity-concentration region is further from the piezoelectric film than the low-impurity-concentration region.

The present invention relates to a transducer structure with transverse mode suppression means, in particular for a single-port resonator, comprising a piezoelectric substrate (120, 170), at least a pair of inter-digitated comb electrodes (102, 112) formed on the piezoelectric substrate (120, 170), wherein the first comb electrode (102) comprises a first bus bar (108) and a plurality of electrode fingers (104) alternating with shorter dummy electrode fingers (106), both extending from the first bus bar (108), wherein the second comb electrode (112) comprises a second bus bar (118) and a plurality of electrode fingers (114) extending from the second bus bar (118), wherein the dummy electrode fingers (106) of the first bus bar (108) face the electrode fingers (114) of the second bus bar (118) and are separated from the electrode fingers (114) by first gaps (110a), characterized in further comprising a transverse mode suppression layer (122, 132, 222, 232, 422, 432) provided partially underneath the first gap (110a) and chosen such that the phase velocity of a guided wave is smaller in the region of the transverse mode suppression layer (122, 132, 222, 232, 422, 432) compared to the phase velocity of the guided wave in the central region (136) underneath the alternating electrodes fingers (104, 114) of the first and second electrodes (102, 112). The present invention also relates to a method for fabricating the transducer structure as previously described and to a single-port resonator comprising at least one structure as previously described.

An acoustic wave device includes a substrate including a piezoelectric layer, first and second resonators on the substrate, and a shared reflector. The second resonator is located on the substrate adjacent to the first resonator and has different frequency characteristics than the first resonator. The shared reflector is located on the substrate between the first resonator and the second resonator and is a reflector for both the first resonator and the second resonator. The first resonator includes a first interdigital transducer electrode with electrode fingers positioned with a first pitch. The second resonator includes a second interdigital transducer electrode with electrode fingers positioned with a second pitch. A lower limit frequency of a stop band of the shared reflector is between a lower limit frequency of a stop band of the first resonator and a lower limit frequency of a stop band of the second resonator. An upper limit frequency of the stop band of the shared reflector is between an upper limit frequency of the stop band of the first resonator and an upper limit frequency of the stop band of the second resonator.

A longitudinally coupled resonator elastic wave filter is disposed on a piezoelectric substrate. IDT electrodes include first and second busbars. An inorganic insulating layer is provided on at least one side in a direction perpendicular or substantially perpendicular to an elastic wave propagation direction to cover the first or second busbars, and a first wiring line is disposed on the inorganic insulating layer to extend in the elastic wave propagation direction. A second wiring line three-dimensionally crosses the first wiring line with the inorganic insulating layer interposed therebetween. The first wiring line is connected to busbars, which are connected to the same potential, by extending through the inorganic insulating layer.

A longitudinally coupled resonator elastic wave filter is disposed on a piezoelectric substrate. IDT electrodes include first and second busbars. An inorganic insulating layer is provided on at least one side in a direction perpendicular or substantially perpendicular to an elastic wave propagation direction to cover the first or second busbars, and a first wiring line is disposed on the inorganic insulating layer to extend in the elastic wave propagation direction. A second wiring line three-dimensionally crosses the first wiring line with the inorganic insulating layer interposed therebetween. The first wiring line is connected to busbars, which are connected to the same potential, by extending through the inorganic insulating layer.