A thin-film bulk acoustic resonator, a semiconductor apparatus including the acoustic resonator and its manufacturing method are presented. The thin-film bulk acoustic resonator includes a lower dielectric layer, a first cavity inside the lower dielectric layer, an upper dielectric layer, a second cavity inside the upper dielectric layer, and a piezoelectric film that is located between the first and second cavities and continuously separates these two cavities. The plan views of the first and the second cavities have an overlapped region, which is a polygon that does not have any parallel sides. The piezoelectric film of this inventive concept is a continuous film without any through-hole in it, therefore it can offer improved acoustic resonance performance.

An electrode structure of a resonator and a fabrication method for the electrode structure of the resonator are provided. The electrode structure includes a piezoelectric layer. An electrode metal layer, a dielectric layer, a protrusion/frame metal layer and an etching passivation layer are sequentially arranged above the piezoelectric layer. An air gap is formed between the dielectric layer and the protrusion/frame metal layer, and the air gap is located at an electrode edge. Through the air gap between the dielectric layer and the protrusion/frame metal layer above the piezoelectric layer, an electrode protrusion/frame structure of the resonator with an edge air gap is formed, which serves as an electrode part. When the resonator is working, through the air gap, a transverse sound wave can be reflected back to the resonator and be bound in a resonator body. This greatly increases the Q factor and working performance of the resonator.

According to the present disclosure, a passband filter is provided. The passband filter comprises a first connection, a second connection, and a third connection. One or more resonators of a first type are provided connected in series between the first connection and the second connection; and one or more resonators of a second type are provided connected from between the first connection and the second connection to the third connection. A radio-frequency front end module and wireless mobile device are also provided.

An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

A process for fabricating a transversely-excited film bulk acoustic resonator (XBAR) having a metal cavity, and the fabricated XBAR include forming a conductor pattern including interleaved interdigital transducer (IDT) fingers on a piezoelectric wafer. Thein forming a metal layer on a substrate, the metal layer having a cavity. Then, bonding the piezoelectric plate to the metal layer using a metal-to-metal bond such that the IDT fingers are disposed over the cavity. Then, thinning the piezoelectric wafer to form a piezoelectric plate having a portion of the piezoelectric plate forming a diaphragm that spans the cavity.

The disclosure provides a method for assembling and interconnecting FBAR filter and an electronic device. The method includes constructing an equivalent circuit model of an assembled FBAR filter according to a circuit model of a filter chip and the grounding circuit of the FBAR filter; modeling, simulating and calculating the grounding circuit to extract parasitic parameters corresponding to the grounding pad and a grounding bond-wire of the grounding circuit, respectively; feedbacking the parasitic parameters back into the equivalent circuit model, and using the circuit simulation software to obtain an S parameter of the filter; adjusting the parasitic parameters of the grounding circuit to optimize an S parameter performance of the FBAR filter: obtaining an optimal assembly configuration of the FBAR filter to guide the assembly. The parasitic parameters include a parasitic inductance of the grounding bond-wire and a parasitic capacitance and parasitic inductance of the grounding pad.

A BAW resonator with an improved lateral energy confinement is provided. The resonator has a bottom electrode in a bottom electrode layer, a top electrode in a top electrode layer and a piezoelectric layer between the bottom electrode layer and the top electrode layer. The piezoelectric layer comprises piezoelectric materials of different piezoelectric polarities.

Provided is an acoustic resonator including: a substrate including a first cavity; a first electrode formed above the substrate; a piezoelectric layer formed on one surface of the first electrode; and a second electrode formed on one surface of the piezoelectric layer, wherein the first electrode and the piezoelectric layer include an overlapping area that corresponds to a first end and a second end of the first cavity, the first electrode has a termination surface formed as an inclined surface of a first acute angle θ.sub.1 outside the overlapping area with respect to the second end of the first cavity, the piezoelectric layer is formed to include a first air bridge area that has a second cavity and is formed between the piezoelectric layer and the first electrode in a vertical direction and between the second end of the first cavity and the termination surface in a horizontal direction.

An interdigital transducer electrode that is provided on a piezoelectric film includes a first busbar, a second busbar, multiple first electrode fingers, and multiple second electrode fingers. The first electrode fingers and the second electrode fingers overlap in a region in a direction in which an acoustic wave propagates, and the region includes a central region, a first edge region that is located between the central region and the first busbar, and a second edge region that is located between the central region and the second busbar. An acoustic velocity in the first edge region and the second edge region is lower than an acoustic velocity in the central region. An acoustic velocity in a busbar region is higher than the acoustic velocity in the central region.

An acoustic wave device includes a support substrate including a cavity portion and a support portion, a piezoelectric film on the support portion and including a first and second main surfaces, a functional electrode on the first main surface, and a heat dissipation film on at least one of the first and second main surfaces and includes a semiconductor or an insulator. The functional electrode includes at least one pair of first and second electrodes. When a thickness of the piezoelectric film is dx and a middle-to-middle distance between the first and second electrodes is p, dx/p is about 0.5 or less. The heat dissipation film overlaps at least a portion of the support portion in plan view. A thermal conductivity of the heat dissipation film is higher than a thermal conductivity of the piezoelectric film, and a thickness of the heat dissipation film is less than the thickness of the piezoelectric film.