Acoustic filters are disclosed. A bandpass filter has a passband between a lower band edge and an upper band edge. The bandpass filter includes a plurality of transversely-excited film bulk acoustic resonators (XBARs) connected in a ladder filter circuit. The plurality of XBARs includes at least one lithium tantalate (LT) XBAR and at least one lithium niobate XBAR. Each of the at least one LT XBAR includes an LT piezoelectric plate with Euler angles (0°, β, 0°), where β is greater than zero and less than or equal to 40 degrees.

Acoustic filters are disclosed. A bandpass filter has a passband between a lower band edge and an upper band edge. The bandpass filter includes a plurality of transversely-excited film bulk acoustic resonators (XBARs) connected in a ladder filter circuit. The plurality of XBARs includes at least one lithium tantalate XBAR and at least one lithium niobate XBAR.

A BAW resonance device comprises a first layer including a cavity located on a first side, a first electrode having a first end located in the cavity and a second end contacting with the first layer, a second layer located on the first side, and a second electrode located on the second layer above the cavity, wherein the first electrode and the second electrode are located on two sides of the second layer. The first electrode comprises a first electrode layer and a second electrode layer, and the second electrode layer and the second layer are located on two sides of the first electrode layer. The second electrode comprises a third electrode layer and a fourth electrode layer, and the second layer and the fourth electrode layer are located on two sides of the third electrode layer. Thus, the electrical resistance is lowered and the electrical losses are reduced.

The invention provides a filter device, an RF front-end device and a wireless communication device. The filter device comprises a substrate, at least one resonance device, a passive device and a connector, wherein the at least one resonance device has a first side and a second side opposite to the first side, the substrate is located on the first side, and the passive device is located on the second side. The at least one resonance device is connected to the passive device through the connector. The RF filter device formed by integrating the resonance device (such as an SAW resonance device or a BAW resonance device) and the passive device (such as an IPD) in one die can broaden the passband width, has a high out-of-band rejection, and occupies less space in an RF front-end chip.

Acoustic resonator devices and filters, and methods of making the same. An acoustic resonator includes a piezoelectric plate and an interdigital transducer (IDT) including interleaved fingers on the piezoelectric plate. The piezoelectric plate and the IDT are configured such that a radio frequency signal applied to the IDT excites a shear primary acoustic mode within the piezoelectric plate. The acoustic resonator further includes a front-side dielectric layer on the piezoelectric plate between the fingers of the IDT, wherein a resonance frequency of the acoustic resonator device has an inverse dependence on a thickness of the front-side dielectric layer.

An acoustic filter includes a piezoelectric plate on a substrate. Portions of the piezoelectric plate form one or more diaphragms, each diaphragm spanning a respective cavity in the substrate. A conductor pattern on a front surface of the piezoelectric plate includes interdigital transducers (IDTs) of acoustic resonators including a shunt resonator and a series resonator. Interleaved fingers of each IDT are on a diaphragm of the one or more diaphragms. A first dielectric layer with a first thickness is between the fingers of the IDT of the shunt resonator, and a second dielectric layer with a second thickness less than the first thickness is between the fingers of the IDT of the series resonator. The piezoelectric plate and the IDTs are configured such that radio frequency signals applied to the IDTs excite respective primary shear acoustic modes within the diaphragms.

An electronic component that includes an electronic element; a base member having an upper surface on which the electronic element is mounted; and a lid member bonded to the base member via a bonding member such that the electronic element is hermetically sealed therebetween. The bonding member is made of an insulating material containing a first metal. The lid member has an outermost layer formed on at least a surface of the lid member facing the base member. The outermost layer of the lid member has a solid solution layer of the first metal and a second metal at at least a portion of the outermost layer.

A bulk-acoustic wave resonator includes: a substrate; and a resonator including a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on the substrate. The piezoelectric layer is formed of aluminum nitride (AlN) containing scandium (Sc), the content of scandium in the piezoelectric layer is 10 wt % to 25 wt %, and the piezoelectric layer has a leakage current density of 1 μA/cm2 or less.

Acoustic filters and methods of fabrication are disclosed. A filter device includes a substrate and a single-crystal piezoelectric plate, a back surface of the piezoelectric plate attached to a surface of the substrate. The filter device includes a plurality of acoustic resonators including one or more shunt resonators and one or more series resonators. Each of the plurality of acoustic resonators includes an interdigital transducer (IDT) formed on the front surface of the piezoelectric plate, interleaved fingers of the IDT disposed on a respective diaphragm formed by a respective portion of the piezoelectric plate that spans a respective cavity in the substrate. A divided frequency setting layer is formed on at least some of the one or more shunt resonators but not on the one or more series resonators.

A method for measuring equivalent circuit parameters and resonant frequency of a piezoelectric resonator, by which the phase-frequency curve of the piezoelectric resonator is measured, and the resonant frequency and the anti-resonant frequency are obtained. Then, the slopes of the phase-frequency curve at the resonant frequency and the anti-resonant frequency are respectively measured. The resonant angular frequency and the anti-resonant angular frequency are also calculated. Finally, the equivalent circuit parameters of the piezoelectric resonator are obtained by solving a system of nonlinear equations.