Patent classifications
H03H9/177
Vibrator device, oscillator, gyro sensor, electronic apparatus, and vehicle
A vibrator device includes a vibration element including a vibration portion and a fixed portion, a supporting member to which the fixed portion is attached to support the vibration element, and a first substrate to which the supporting member is attached, the supporting member includes a attaching portion attached to the first substrate, and A1A2 is satisfied in a case where an area of a rectangular region including the fixed portion is A1 and an area of a rectangular region including the attaching portion is A2 in a plan view seen from a thickness direction of the vibration element.
Bulk acoustic wave resonators having a phononic crystal acoustic mirror
Bulk acoustic wave resonators having a phononic crystal acoustic mirror are disclosed. An example integrated circuit package includes a bulk acoustic wave (BAW) resonator including a phononic crystal acoustic mirror (PCAM), the PCAM including a first arrangement of a first plurality of members in a first region, and a second arrangement of a second plurality of members in a second region, the first arrangement different from the second arrangement.
Bulk acoustic resonator
A bulk acoustic resonator may include a substrate; a resonating portion including a first electrode layer, a piezoelectric layer, and a second electrode layer which are sequentially stacked on the substrate, and partitioned into an active region and a non-active region; and a frame electrode layer including frame electrodes disposed within the active region to be spaced apart from each other along an outer circumference portion of the active region.
Quartz crystal resonator and method for manufacturing the same, and quartz crystal resonator unit and method for manufacturing the same
A method for manufacturing a quartz crystal resonator that includes a quartz crystal blank having a vibrating portion including a center of a principal surface of the quartz crystal blank when viewed in plan from a direction normal to the principal surface and a peripheral portion adjacent to the vibrating portion, a pair of excitation electrodes disposed opposite to each other with the vibrating portion interposed therebetween, a pair of electrode pads disposed on the peripheral portion, and a pair of extended electrodes each extending from the vibrating portion to the peripheral portion to electrically connect one excitation electrode to a corresponding electrode pad, where the method includes conducting a first trimming of the vibrating portion and the peripheral portion; and conducting a second trimming of part of one of the excitation electrodes on the vibrating portion.
MULTIPLEXER
A multiplexer includes first and second nodes, an inductor, a first transmit/receive filter, and second and third transmit filters. The inductor is connected at one end to the first node and at the other end to the second node. The first transmit/receive filter is connected to the first node without the inductor interposed therebetween and uses the transmit and receive bands of band A as a pass band. The second transmit filter is connected to the second node and uses the transmit band of band B as a pass band. The third transmit filter is connected to the second node and uses the transmit band of band C as a pass band.
METHODS OF FORMING GROUP III-NITRIDE SINGLE CRYSTAL PIEZOELECTRIC THIN FILMS USING ORDERED DEPOSITION AND STRESS NEUTRAL TEMPLATE LAYERS
A method of forming a piezoelectric thin film can include depositing a material on a first surface of a Si substrate to provide a stress neutral template layer. A piezoelectric thin film including a Group III element and nitrogen can be sputtered onto the stress neutral template layer and a second surface of the Si substrate that is opposite the first surface can be processed to remove that Si substrate and the stress neutral template layer to provide a remaining portion of the piezoelectric thin film. A piezoelectric resonator can be formed on the remaining portion of the piezoelectric thin film.
MANUFACTURING METHOD FOR ELECTRONIC COMPONENT
A manufacturing method for an electronic component that includes a providing a base member on a first main surface of a first board, sandwiching the base member and a joining member paste between the first main surface of the first board and a transfer main surface of a transfer board, forming a joining member joined with the base member while the joining member paste is sandwiched by the first board and the transfer board, and peeling off the transfer board from the joining member joined with the base member.
ELECTRONIC COMPONENT
An electronic component that includes a first board having a bow-shaped first main surface and a joining member disposed on the first main surface of the first board and having a top edge configured to be joined with a second board, wherein the top edge of the joining member is disposed in a plane.
Crystal vibrator, method for manufacturing the same, and crystal vibration device
A crystal vibrator that includes a crystal substrate having a front surface and a rear surface, including a vibration portion in a region including a center of the crystal substrate, and a first peripheral portion that surrounds a periphery of the vibration portion and that has a smaller thickness than the vibration portion. Drive electrodes are formed on both surfaces of the vibration portion of the crystal substrate. In at least one of the front surface and the rear surface of the crystal substrate, a step is provided between the vibration portion and the first peripheral portion, and a first peripheral edge portion of the vibration portion and a second peripheral edge portion of the first peripheral portion are in a curved surface shape.
Quartz crystal blank and quartz crystal resonator unit
A rectangular quartz crystal blank having long sides substantially parallel to a Z axis of the quartz crystal blank, and short sides substantially parallel to an X axis of the quartz crystal blank. The quartz crystal blank includes a center region, a second region and a third region that are adjacent to the center region along a long-side direction, and a fourth region and a fifth region that are adjacent to the first region along a short-side direction. A thickness of the second region and a thickness of the third region are smaller than a thickness of the first region, and/or a thickness of the fourth region and a thickness of the fifth region are smaller than a thickness of the first region, and 25.93W/T27.07, where W is a length of a short side and T is a thickness.