A resonator that includes a vibrating portion that has a piezoelectric film, and a lower and upper electrodes that face each other with the piezoelectric film interposed therebetween. Moreover, a holding portion is provided at least around a maximum displacement region of the vibrating portion and has an insulating film. A holding arm connects the vibrating portion and the holding portion, and include a conductive portion that is in contact with the insulating film of the holding portion in at least a region that faces the maximum displacement region of the vibrating portion. In addition, the conductive portion is electrically connected to the lower electrode or the upper electrode or is grounded.

A dual-output microelectromechanical system (MEMS) resonator can be operated selectively and concurrently in an in-plane mode of vibration and an out-of-plane mode of vibration to obtain, respectively, a first electrical signal having a first frequency and a second electrical signal having a second frequency that is less than the first frequency. The first and second electrical signals are mixed to obtain a third electrical signal having a third frequency, where the third frequency is proportional to a temperature of the MEMS resonator. The temperature is determined based on the third frequency. Values of the first and second frequencies can be adjusted based on the determined temperature to compensate for frequency deviations due to temperature deviations. Also described herein are methods and systems for determining the temperature of the dual-output MEMS and for performing frequency compensation, as well as a method of manufacturing the dual-output MEMS.

There is provided a dual-output microelectromechanical system (MEMS) resonator. The MEMS resonator can be operated selectively and concurrently in an in-plane mode of vibration and an out-of-plane mode of vibration to obtain respectively a first electrical signal having a first frequency, and a second electrical signal having a second frequency being less than the first frequency. The first and second electrical signals are mixed to obtain a third electrical signal having a third frequency, where the third frequency is proportional to a temperature of the MEMS resonator. The temperature is determined based on the third frequency. Values of the first and second frequencies can be adjusted based on the determined temperature to compensate for frequency deviations due to temperature deviations. There is also provided methods and systems for determining the temperature of the dual-output MEMS, for compensating the frequency, and a method of manufacturing the dual-output MEMS.

There is provided a dual-output microelectromechanical system (MEMS) resonator. The MEMS resonator can be operated selectively and concurrently in an in-plane mode of vibration and an out-of-plane mode of vibration to obtain respectively a first electrical signal having a first frequency, and a second electrical signal having a second frequency being less than the first frequency. The first and second electrical signals are mixed to obtain a third electrical signal having a third frequency, where the third frequency is proportional to a temperature of the MEMS resonator. The temperature is determined based on the third frequency. Values of the first and second frequencies can be adjusted based on the determined temperature to compensate for frequency deviations due to temperature deviations. There is also provided methods and systems for determining the temperature of the dual-output MEMS, for compensating the frequency, and a method of manufacturing the dual-output MEMS.

A method for fabricating an acoustic wave resonator includes, in part, forming a micro-fin structure that includes one or more sidewalls on a substrate. The sidewalls are thereafter annealed. A bottom electrode layer is then deposited on top of the micro-fin structure. Afterwards, a layer of aluminum nitride is formed on the bottom electrode layer where the layer of aluminum nitride includes a textured aluminum nitride layer with a c-axis substantially perpendicular to the one or more sidewalls. A top electrode layer is then formed on top of the layer of aluminum nitride. In addition, the top electrode layer can be patterned, and the layer of aluminum nitride can be etched to provide access windows to the bottom electrode layer.

A bulk acoustic wave resonator apparatus includes a resonator member having an annulus shape, and at least one anchor structure coupling the resonator member to a substrate. A perimeter of the resonator member is at least partially defined by respective sidewalls that are slanted at an angle relative to a plane defined by a surface of the resonator member. The surface of the resonator member may be defined by a (100) crystal plane, and the angle of the respective sidewalls may be defined by a (111) crystal plane. Related fabrication methods are also discussed.

Reference oscillators are ubiquitous in timing applications generally, and in modern wireless communication devices particularly. Microelectromechanical system (MEMS) resonators are of particular interest due to their small size and potential for integration with other MEMS devices and electrical circuits on the same chip. In order to support their use in high volume low cost applications it would be beneficial for MEMS designers to have MEMS resonator designs and manufacturing processes that whilst employing low cost low resolution semiconductor processing yield improved resonator performance thereby reducing the requirements of the oscillator circuitry. It would be further beneficial for the oscillator circuitry to be able to leverage the improved noise performance of differential TIAs without sacrificing power consumption.

An apparatus includes a microelectromechanical system (MEMS) die having a first surface and an opposing second surface. The MEMS die includes a surface-mounted resonator on the first surface and includes a first inductor. The apparatus also includes first and second dies. The first die has a third surface and an opposing fourth surface. The first die is coupled to the MEMS die such that the third surface of the first die faces the first surface of the MEMS die. The first and second surfaces are spaced apart. The first die includes an oscillator circuit and a second inductor. The oscillator circuit is coupled to the second inductor. The second inductor is inductively coupled to the first inductor. The second die is electrically coupled to the first die.

A symmetrical MEMS resonator is disclosed with a high quality factor. The MEMS resonator includes a silicon layer with a top surface and bottom surface opposite the top surface. A pair of first metal layers is provided above the top surface of the silicon layer and a corresponding pair of second metal layers is symmetrically provided below the second surface of the silicon layer relative to the pair of first metal layers. Furthermore, a first piezoelectric layer is disposed between the pair of first metal layers and a second piezoelectric layer is disposed between the pair of second metal layers.

A Fin Bulk Acoustic Resonator (FinBAR) includes a fin integrally fabricated on a substrate of a glass or a semiconductor, an inner electrode deposited on the fin, a piezoelectric layer disposed on the inner electrode, an outer electrode deposited on the piezoelectric layer, a first electrode and a second electrode formed on the top surface of the substrate and connected to the inner and outer electrodes respectfully. The fin is characterized with a larger height than its width. A FinBAR array including a number of the FinBARs with different fin widths sequentially located on one chip is capable of continuously filtering frequencies in UHF and SHF bands.