The present disclosure provides a semiconductor package structure. The semiconductor package structure includes a substrate, a first electronic component and a support component. The first electronic component is disposed on the substrate. The first electronic component has a backside surface facing a first surface of the substrate. The support component is disposed between the backside surface of the first electronic component and the first surface of the substrate. The backside surface of the first electronic component has a first portion connected to the support component and a second portion exposed from the support component.

Embodiments disclosed herein include resonators, such as resonant fin transistors (RFTs). In an embodiment a resonator comprises a substrate, a set of contact fins over the substrate, a first contact proximate to a first end of the set of contact fins, and a second contact proximate to a second end of the set of contact fins. In an embodiment, the resonator further comprises a set of skip fins over the substrate and adjacent to the set of contact fins. In an embodiment, the resonator further comprises a gate electrode over the set of contact fins and the set of skip fins, wherein the gate electrode is between the first contact and the second contact.

A spectrum analyzer includes: a support substrate; and a plurality of resonators that have center frequencies different from each other, one end of each of the plurality of resonators being fixed to the support substrate. The plurality of resonators are arranged so that an interval between resonators having adjacent center frequencies is secured by a certain value or greater, thus reducing coupling and increasing analysis accuracy.

A resonator including a lower electrode, an upper electrode, and a piezoelectric film that is formed between the lower electrode and the upper electrode. A MEMS device is provided that includes an upper lid that faces the upper electrode, and a lower lid that faces the lower electrode and that seals the resonator together with the upper lid. A CMOS device is mounted on a surface of the upper lid or the lower lid opposite a surface that faces the resonator. The CMOS device includes a CMOS layer and a protective layer that is disposed on a surface of the CMOS layer opposite a surface that faces the resonator. The upper or lower lid to which the CMOS device is joined includes a through-electrode that electrically connects the CMOS device to the resonator.

A micromechanical resonator includes a support beam having a fixed end, and a free end configured to vibrate. The micromechanical resonator includes a lumped mass disposed on the free end. A height of the lumped mass is greater than a width of the lumped mass.

A resonator device may include a stacked first resonator and second resonator. The first resonator may be configured to resonate at a first operating frequency, and the second resonator may be configured to resonate at a second operating frequency different from the first operating frequency. The first resonator may include a first electrode and a first active layer arranged over the first electrode. The second resonator may include a second active layer arranged over the first active layer, and a second electrode arranged over the second active layer. The stacked first resonator and second resonator may be coupled to a reconfiguration switch for selectively operating at the first operating frequency or the second operating frequency. One of the first resonator and the second resonator is active upon selection by the reconfiguration switch, while the other resonator is inactive.

Acoustic wave devices based on epitaxially grown heterostructures comprising appropriate combinations of epitaxially grown metallic transition metal nitride (TMN) layers, epitaxially grown Group III-nitride (III-N) piezoelectric semiconductor thin film layers, and epitaxially grown perovskite oxide (PO) layers. The devices can include bulk acoustic wave (BAW) devices, surface acoustic wave (SAW) devices, high overtone bulk acoustic resonator (HBAR) devices, and composite devices comprising HBAR devices integrated with high-electron-mobility transistors (HEMTs).

MEMS based sensors, particularly capacitive sensors, potentially can address critical considerations for users including accuracy, repeatability, long-term stability, ease of calibration, resistance to chemical and physical contaminants, size, packaging, and cost effectiveness. Accordingly, it would be beneficial to exploit MEMS processes that allow for manufacturability and integration of resonator elements into cavities within the MEMS sensor that are at low pressure allowing high quality factor resonators and absolute pressure sensors to be implemented. Embodiments of the invention provide capacitive sensors and MEMS elements that can be implemented directly above silicon CMOS electronics.

A resonator device may include a stacked first resonator and second resonator. The first resonator may be configured to resonate at a first operating frequency, and the second resonator may be configured to resonate at a second operating frequency different from the first operating frequency. The first resonator may include a first electrode and a first active layer arranged over the first electrode. The second resonator may include a second active layer arranged over the first active layer, and a second electrode arranged over the second active layer. The stacked first resonator and second resonator may be coupled to a reconfiguration switch for selectively operating at the first operating frequency or the second operating frequency. One of the first resonator and the second resonator is active upon selection by the reconfiguration switch, while the other resonator is inactive.

A microelectromechanical resonant switch (resoswitch) converts received radio frequency (RF) energy into a clock output. The resoswitch first accepts incoming amplitude- or frequency-shift keyed clock-modulated RF energy at a carrier frequency, filters it, provides power gain via resonant impact switching, and finally envelop detects impact impulses to demodulate and recover the carrier clock waveform. The resulting output derives from the clock signal that originally modulated the RF carrier, resulting in a local clock that shares its originator's accuracy. A bare push-pull 1-kHz RF-powered mechanical clock generator driving an on-chip inverter gate capacitance of 5 fF can potentially operate with only 5 pW of battery power, 200,000 times lower than a typical real-time clock. Using an off-chip inverter with 17.5 pF of effective capacitance, a 1-kHz push-pull resonator would consume 17.5 nW.