In examples, a device comprises a semiconductor die, a thin-film layer, and an air cavity positioned between the semiconductor die and the thin-film layer. The air cavity comprises a resonator positioned on the semiconductor die. A rib couples to a surface of the thin-film layer opposite the air cavity.

A fabrication method and associated apparatus is disclosed where an electromechanical resonator made out of lithium niobate is fabricated on the same substrate as a Josephson Junction-based transmon qubit. The starting material may be a high resistivity silicon wafer with a thin layer of lithium niobate (LiNbO3). The fabrication method may include removing lithium niobate selectively from the substrate to preserve the quality of the substrate. The selective removal maintains defect free qualities of the silicon surface, thus enabling the fabrication of high performance Josephson Junction-based transmon qubit on the surface.

In one embodiment, a piezo-resistive resonator device includes one or more drive transistors with source and drain regions in a first well and a sense transistor with source and drain regions in a second well of opposite polarity than the first well. The gates of the drive and sense transistor are connected to a first direct current (DC) source. The drain region of the sense transistor is connected to a second DC source, and the source and drain regions of the drive transistor are connected to an alternating current (AC) source.

The present disclosure discloses a capacitively transduced Micro or Nano Electromechanical ring oscillator device comprising two or more resonance units coupled with each other, the two or more resonance units are coupled with one or more Signal Conditioning Circuits (SCCs). The oscillator further comprises a first set of the one or more SCC is coupled with at least one of the two or more resonance units. Further, the oscillator comprises a second set of the one or more SCC is coupled with at least one of the two or more resonance units, wherein one of the first set of the one or more SCC and the second set of the one or more SCC is configured to operate in a buffer active state. The two or more resonance units comprises one or more control gate units, and the two or more resonance units are coupled with each other in a back-to-back configuration.

The present disclosure relates to methods and system that provides techniques of designing amplifiers with controllable gain for electrical signals/power based on capacitively transduced Micro and/or Nano electromechanical resonators. The present disclosure provides techniques of implementing an RF voltage amplifier, a phase shift amplifier, and/or an RF power amplifier through capacitively transduced Micro/Nano electromechanical resonators. In some embodiments, the amplifier is narrow-band with the centre frequency specified by the resonant frequency of the Micro/Nano electromechanical resonators. In addition, the present disclosure provides a technique by which a set of capacitively transduced Micro/Nano electromechanical resonators are implemented as RF power amplifier with multiple inputs and multiple outputs with the output voltage being measured at electrically floating electrodes that are capacitively coupled with the resonator. These electrically-floating electrodes can also be used to sum various output signals from a resonator and signals output from various resonators.