A microelectromechanical device having a mobile structure including mobile arms formed from a composite material and having a fixed structure including fixed arms capacitively coupled to the mobile arms. The composite material includes core regions of insulating material and a silicon coating.

Embodiments of a tunable bandpass microelectromechanical (MEMS) filter are described. In one embodiment, such a filter includes a pair of arch beam microresonators, and a pair of voltage sources electrically coupled to apply a pair of adjustable voltage biases across respective ones of the pair of arch beam microresonators. The pair of voltage sources offer independent tuning of the bandwidth of the filter. Based on the structure and arrangement of the filter, it can be tunable by 125% or more by adjustment of the adjustable voltage bias. The filter also has a relatively low bandwidth distortion, can exhibit less than 2.5 dB passband ripple, and can exhibit sideband rejection in the range of at least 26 dB.

The present disclosure provides a frequency-converting super regenerative transceiver with a frequency mixer coupled to a resonator and a feedback element having a controllable gain. The frequency-converting super-regenerative transceiver utilizes the frequency mixer to shift the incoming frequencies, based on a controlled oscillator, to match the frequency of operation of the super-regenerative transceiver. The frequency-converting super-regenerative transceivers described herein permit signal data capture over a broad range of frequencies and for a range of communication protocols. The frequency-converting super-regenerative transceivers described herein are tunable, consume very little power for operation and maintenance, and permit long term operation even when powered by very small power sources (e.g., coin batteries).

Describe is a resonator that uses ferroelectric (FE) materials in the gate of a transistor as a dielectric. The use of FE increases the strain/stress generated in the gate of the FinFET. Along with the usual capacitive drive, which is boosted with the increased polarization, FE material expands or contacts depending on the applied electric field on the gate of the transistor. As such, acoustic waves are generated by switching polarization of the FE materials. In some embodiments, the acoustic mode of the resonator is isolated using phononic gratings all around the resonator using the metal line above and vias' to body and dummy fins on the side. As such, a Bragg reflector is formed above the FE based transistor.

Describe is a resonator that uses anti-ferroelectric (AFE) materials in the gate of a transistor as a dielectric. The use of AFE increases the strain/stress generated in the gate of the FinFET. Along with the usual capacitive drive, which is boosted with the increased polarization, additional current drive is also achieved from the piezoelectric response generated to due to AFE material. In some embodiments, the acoustic mode of the resonator is isolated using phononic gratings all around the resonator using the metal line above and vias' to body and dummy fins on the side. As such, a Bragg reflector is formed above or below the AFE based transistor. Increased drive signal from the AFE results in larger output signal and larger bandwidth.

A resonance device is provided with a reduced size and also suppresses the occurrence of deformation and breakage during operation. The resonance device includes a lower substrate, an upper substrate that defines a vibration space between the lower substrate and the upper substrate, a protruding portion that is formed on an inner surface of the lower or upper substrates. Moreover, a resonator is disposed in the vibration space and includes a base portion and vibration arms that extend in parallel to one another from the base portion along the inner surface of the lower substrate or the inner surface of the upper substrate and that vibrate in a vertical direction toward the inner surface of the lower substrate or the inner surface of the upper substrate.

A carbon nanotube (CNT) resonator includes: a first CNT having a first end and a second end both fixed to a substrate; and a second CNT having a first end fixed to the substrate. The second CNT creates a Van der Waals (VdW) bond with the first CNT where the second CNT overlaps the first CNT. A length of the VdW bond along a distance between the first and the second CNTs oscillates based on a DC voltage applied between the first end of the first CNT and the first end of the second CNT. An electrical current passing through the first and the second CNTs using the VdW bond oscillates based on the oscillation of the length of the VdW bond.

The present disclosure provides a super-regenerative transceiver with a feedback element having a controllable gain. The super-regenerative transceiver utilizes the controllable gain to improve RF signal data sensitivity and improve RF signal data capture rates. Super-regenerative transceivers described herein permit signal data capture over a broad range of frequencies and for a range of communication protocols. Super-regenerative transceivers described herein are tunable, consume very little power for operation and maintenance, and permit long term operation even when powered by very small power sources (e.g., coin batteries).

A continuous or distributed resonator geometry is defined such that the fabrication process used to form a spring mechanism also forms an effective mass of the resonator structure. Proportional design of the spring mechanism and/or mass element geometries in relation to the fabrication process allows for compensation of process-tolerance-induced fabrication variances. As a result, a resonator having increased frequency accuracy is achieved.

A MEMS device that suppresses variations in a resistance value caused by contracting vibrations in a direction in which a holding portion extends. The MEMS device includes a frame, a rectangular plate that receives an input of a driving signal, and holding portions that anchor the rectangular plate to the frame. The frame and the rectangular plate are both rectangular in shape. The holding portions are provided extending toward the frame from central areas of the opposing sides of the rectangular plate, and anchor the rectangular plate to the frame. A resistive film is formed in a region that follows a straight line connecting the holding portions that anchor the rectangular plate to the frame and that corresponds to no more than half a maximum displacement from a vibration distribution.