Integrated Microelectromechanical System (MEMS) devices and methods for making the same. The integrated MEMS device comprises a substrate (200) with first electronic circuitry (206) formed thereon, as well as a MEMS filter device (100). The MEMS filter device has a transition portion (118) configured to (a) electrically connect the MEMS filter device to second electronic circuitry and (b) suspend the MEMS filter device over the substrate such that a gas gap exists between the substrate and the MEMS filter device. The transition portion comprises a three dimensional hollow ground structure (120) in which an elongate center conductor (122) is suspended. The RF MEMS filter device also comprises at least two adjacent electronic elements (102/110) which are electrically isolated from each other via a ground structure of the transition portion, and placed in close proximity to each other.

An electrical circuit assembly can include a semiconductor integrated circuit, such as fabricated including CMOS devices. A first lateral-mode resonator can be fabricated upon a surface of the semiconductor integrated circuit, such as including a deposited acoustic energy storage layer including a semiconductor material, a deposited piezoelectric layer acoustically coupled to the deposited acoustic energy storage layer, and a first conductive region electrically coupled to the deposited piezoelectric layer and electrically coupled to the semiconductor integrated circuit. The semiconductor integrated circuit can include one or more transistor structures, such as fabricated prior to fabrication of the lateral-mode resonator. Fabrication of the lateral-mode resonator can include low-temperature processing specified to avoid disrupting operational characteristics of the transistor structures.

The present disclosure relates to a high power and low loss acoustic filter that includes a first node, a second node, a first power bypass path, and a first acoustic resonator (AR) path. The first power bypass path extends between the first node and the second node. The first AR path also extends between the first node and the second node, is in parallel with the first power bypass path, and includes at least one first acoustic resonator that form an acoustic resonator network. Herein, the first AR path has a notch filter response. The first power bypass path and the first AR path form a first filter cell that has a band-pass filter response.

Non-transitory computer-readable media to perform a method for designing a multiband filter. The method includes generating an initial circuit structure comprising a desired number and type of circuit elements; generating an initial circuit design by mapping the frequency response requirements of the initial circuit structure into normalized space; generating an acoustic filter circuit design by transferring the initial filter circuit design; generating a pre-optimized circuit design by unmapping one or more circuit elements of the acoustic filter circuit design into real space and introducing parasitic effects; and communicating the pre-optimized circuit design to a filter optimizer that generates a final circuit design comprising a plurality of resonators, wherein a first resonator exhibits a high resonant frequency, a second resonator demonstrates a low resonant frequency and the difference between the low resonant frequency and the high resonant frequency is at least 1.25 times the average frequency separation of the resonators.

A filter includes two series arm resonators electrically connected in series between two input/output terminals, a parallel arm resonator electrically connected between a ground and a series arm between the two series arm resonators, an inductor electrically connected in parallel to the two series arm resonators, and a matching circuit electrically connected between one of the two series arm resonators and one of the input/output terminals, wherein the two series arm resonators and the parallel arm resonator define a pass band of a bandpass filter, the two series arm resonators and the inductor define an LC resonant circuit, respective anti-resonant frequencies of each of the two series arm resonators and a resonant frequency of the parallel arm resonator are located in a pass band of the LC resonant circuit, and a resonant frequency of the LC resonant circuit is lower than the resonant frequency of the parallel arm resonator.

A tunable RF filter circuit (AHF) is specified which enables good electrical properties, good tunability and simple driving despite low complexity. In this case, the filter circuit comprises a first and a second signal route (SW1, SW2) in a signal path (E, A). At least three resonant circuits (RK1, RK2, RK3) are arranged one after another in the second signal route and interconnect the second signal route with ground. The resonant circuits are electrically and/or magnetically coupled (K) and each comprise a tunable impedance element. The second signal route contains an impedance element (IMP).

The present application is directed to a tunable filter system. The system includes a resonator having an inner wall surrounding a cavity. The resonator includes a MEMS device positioned in the cavity including a substrate, a movable plate and a thermal actuator. The thermal actuator is has a first end coupled to the substrate and a second end coupled to the plate. The actuator moves the plate between a first and a second position in relation to the substrate. The application is also directed to a method for operating the tunable filter.

Active feedback is used with two electrodes of a four-electrode capacitive-gap transduced wine-glass disk resonator to enable boosting of an intrinsic resonator Q and to allow independent control of insertion loss across the two other electrodes. Two such Q-boosted resonators configured as parallel micromechanical filters may achieve a tiny 0.001% bandwidth passband centered around 61 MHz with only 2.7 dB of insertion loss, boosting the intrinsic resonator Q from 57,000, to an active Q of 670,000. The split capacitive coupling electrode design removes amplifier feedback from the signal path, allowing independent control of input-output coupling, Q, and frequency. Controllable resonator Q allows creation of narrow channel-select filters with insertion losses lower than otherwise achievable, and allows maximizing the dynamic range of a communication front-end without the need for a variable gain low noise amplifier.

A multi-band acoustic wave microwave filter, including a signal transmission path having an input and an output; a plurality of nodes disposed along the signal transmission path; a plurality of non-resonant branches respectively coupling one or more nodes to ground, wherein each non-resonant branch comprises at least one non-resonant element; and a plurality of resonant branches that couple one or more nodes to ground and include a plurality of resonators on said branches, wherein the plurality of resonators define a first band and at least one additional band and further wherein the difference between the lowest resonant frequency and the highest resonant frequency of the first band is at least 1.25 times the average separation of the resonators.

An electrical circuit assembly can include a semiconductor integrated circuit, such as fabricated including CMOS devices. A first lateral-mode resonator can be fabricated upon a surface of the semiconductor integrated circuit, such as including a deposited acoustic energy storage layer including a semiconductor material, a deposited piezoelectric layer acoustically coupled to the deposited acoustic energy storage layer, and a first conductive region electrically coupled to the deposited piezoelectric layer and electrically coupled to the semiconductor integrated circuit. The semiconductor integrated circuit can include one or more transistor structures, such as fabricated prior to fabrication of the lateral-mode resonator. Fabrication of the lateral-mode resonator can include low-temperature processing specified to avoid disrupting operational characteristics of the transistor structures.