Embodiments of the invention include an acoustic wave resonator (AWR) module. In an embodiment, the AWR module may include a first AWR substrate and a second AWR substrate affixed to the first AWR substrate. In an embodiment, the first AWR substrate and the second AWR substrate define a hermetically sealed cavity. A first AWR device may be positioned in the cavity and formed on the first AWR substrate, and a second AWR device may be positioned in the cavity and formed on the second AWR substrate. In an embodiment, a center frequency of the first AWR device is different than a center frequency of the second AWR device. In additional embodiment of the invention, the AWR module may be integrated into a hybrid filter. The hybrid filter may include an AWR module and other RF passive devices embedded in a packaging substrate.

A high-frequency module (10) includes a laminated substrate formed by laminating a plurality of insulator layers, a first terminal (P1) and a second terminal (P2) provided on the laminated substrate, a filter (20) connected between the first terminal (P1) and the second terminal (P2), a matching circuit (40) connected between the first terminal (P1) and the filter (20), and an inductor (60) provided as a conductor pattern in or on the laminated substrate, and connected between the filter (20) and the ground. The matching circuit (40) includes a mounting circuit unit (41) provided as an individual component on the laminated substrate, and a layer circuit (42) provided as a conductor pattern in or on the laminated substrate. A layer circuit unit (42) is electromagnetically coupled to the inductor (60).

A high-frequency module (10) includes a laminated substrate formed by laminating a plurality of insulator layers, a first terminal (P1) and a second terminal (P2) provided on the laminated substrate, a filter (20) connected between the first terminal (P1) and the second terminal (P2), a matching circuit (40) connected between the first terminal (P1) and the filter (20), and an inductor (60) provided as a conductor pattern in or on the laminated substrate, and connected between the filter (20) and the ground. The matching circuit (40) includes a mounting circuit unit (41) provided as an individual component on the laminated substrate, and a layer circuit (42) provided as a conductor pattern in or on the laminated substrate. A layer circuit unit (42) is electromagnetically coupled to the inductor (60).

A piezoelectric thin film resonator includes: a substrate; a lower electrode located on the substrate; a piezoelectric film that has a step on an upper surface thereof and is located on the lower electrode, a film thickness of the piezoelectric film inside the step being greater than a film thickness of the piezoelectric film outside the step; an upper electrode located on the piezoelectric film so that a resonance region is formed, the lower electrode and the upper electrode facing each other across the piezoelectric film in the resonance region, the resonance region including the step in plan view; and an insertion film located in the piezoelectric film, between the piezoelectric film and the lower electrode, or between the piezoelectric film and the upper electrode in at least a part of an outer peripheral region within the resonance region, and not located in a central region of the resonance region.

A piezoelectric thin film resonator includes: a substrate; a lower electrode located on the substrate; a piezoelectric film that has a step on an upper surface thereof and is located on the lower electrode, a film thickness of the piezoelectric film inside the step being greater than a film thickness of the piezoelectric film outside the step; an upper electrode located on the piezoelectric film so that a resonance region is formed, the lower electrode and the upper electrode facing each other across the piezoelectric film in the resonance region, the resonance region including the step in plan view; and an insertion film located in the piezoelectric film, between the piezoelectric film and the lower electrode, or between the piezoelectric film and the upper electrode in at least a part of an outer peripheral region within the resonance region, and not located in a central region of the resonance region.

A method for designing a narrowband acoustic wave microwave filter including: generating a modeled filter circuit design having circuit elements including an acoustic resonant element defined by an electrical circuit model that includes a parallel static branch, a parallel motional branch, and one or both of a parallel Bragg Band branch that models an upper Bragg Band discontinuity and a parallel bulk mode function that models an acoustic bulk mode loss; and generating a final circuit design. Generating the final circuit design includes optimizing the modeled filter circuit design to generate an optimized filter circuit design; comparing a frequency response of the optimized filter circuit design to requirements; selecting the optimized filter circuit design for construction into the actual acoustic microwave filter based on the comparison; and transforming the optimized filter circuit design to a design description file for input to a construction process.

A ladder filter includes serial arm resonators disposed along a serial arm and parallel arm resonators disposed along corresponding parallel arms. Ladder circuit units are disposed along a path from an input terminal, which is a first end, to an output terminal, which is a second end. Each of the ladder circuit units includes a single serial arm resonator and a single parallel arm resonator. The ladder circuit units are mirror-connected to one another. The impedance at the first end is different from the impedance at the second end.

A ladder filter includes serial arm resonators disposed along a serial arm and parallel arm resonators disposed along corresponding parallel arms. Ladder circuit units are disposed along a path from an input terminal, which is a first end, to an output terminal, which is a second end. Each of the ladder circuit units includes a single serial arm resonator and a single parallel arm resonator. The ladder circuit units are mirror-connected to one another. The impedance at the first end is different from the impedance at the second end.

Active feedback is used with two electrodes of a four-electrode capacitive-gap transduced wine-glass disk resonator to enable boosting of an intrinsic resonator Q and to allow independent control of insertion loss across the two other electrodes. Two such Q-boosted resonators configured as parallel micromechanical filters may achieve a tiny 0.001% bandwidth passband centered around 61 MHz with only 2.7 dB of insertion loss, boosting the intrinsic resonator Q from 57,000, to an active Q of 670,000. The split capacitive coupling electrode design removes amplifier feedback from the signal path, allowing independent control of input-output coupling, Q, and frequency. Controllable resonator Q allows creation of narrow channel-select filters with insertion losses lower than otherwise achievable, and allows maximizing the dynamic range of a communication front-end without the need for a variable gain low noise amplifier.

A radio-frequency filter (10) includes a series arm resonator (s1) connected between input/output terminals (11m and 11n) and parallel arm circuits (110 and 120) connected to a node (x1) and a ground. The parallel arm circuit (110) includes a parallel arm resonator (p1) and a variable frequency circuit (110A) connected in series with each other between the node (x1) and a ground. The variable frequency circuit (110A) changes the resonant frequency of the parallel arm circuit (110). The variable frequency circuit (110A) is connected in series with the parallel arm resonator (p1) and includes a capacitor (C1) and a switch (SW1) connected in parallel with each other. The parallel arm circuit (120) includes a capacitor (C2) and a switch (SW2) connected in series with each other between the node (x1) and a ground.