An electronic filter comprises a high pass section (110) and a low pass section (120). The high pass section includes at least one filter stage of a series-connected acoustic resonator (111) and a parallel connected inductor (114). The low pass section comprises at least one filter stage including a series-connected inductor (121) and a parallel connected acoustic resonator (123). The filter is useful for a communication device covering the n79 5G band.

An RF filter system including a plurality of BAW resonators arranged in a circuit, the circuit including a serial configuration of resonators and a parallel shunt configuration of resonators, the circuit having a circuit response corresponding to the serial configuration and the parallel configuration of the plurality of bulk acoustic wave resonators including a transmission loss from a pass band having a bandwidth from 5.490 GHz to 5.835 GHz. Resonators include a support member with a multilayer reflector structure; a first electrode including tungsten; a piezoelectric film including aluminum scandium nitride; a second electrode including tungsten; and a passivation layer including silicon nitride. At least one resonator includes at least a portion of the first electrode located within a cavity region defined by a surface of the support member.

Disclosed is a radio frequency (RF) filter that vertically integrates an acoustic die with inductors formed in one or more layers above the acoustic die. The acoustic die may be over-molded so that the acoustic dome, important for maintaining acoustic integrity, may be protected.

Aspects of the disclosure relate to wireless communication filtering. One aspect is an apparatus including a first acoustic resonator that is part of a first bandpass filter having a first passband and coupled to a circuitry connection port and a communication connection port, and a second acoustic resonator that is part of one of a second bandpass filter or a notch filter. The apparatus further includes a third acoustic resonator that is part of the first bandpass filter, and a fourth acoustic resonator that is part of the second bandpass filter or the notch filter.

A filter integrated circuit, including an acoustic wave filter chip and a matching circuit, is provided. The acoustic wave filter chip is covered upon a substrate. The matching circuit is disposed on the substrate to provide matching impedance to the acoustic wave filter chip. A first pad and a second pad of the matching circuit are respectively connected to a first signal terminal and a second signal terminal of the acoustic wave filter chip. First terminals of a first coil inductor and a second coil inductor of the matching circuit are respectively connected to the first pad and the second pad of the substrate. The first coil inductor is adjacent to the second coil inductor, so that mutual inductance and parasitic capacitance are formed, so that the matching circuit and the acoustic wave filter chip jointly generate a transmission zero point located in a triple fundamental frequency range.

A coupled resonator filter device is disclosed. The coupled resonator filter device includes a substrate with one or more acoustic reflector layers disposed over the substrate, a first lower electrode disposed over the one or more acoustic reflector layers, a first piezoelectric layer disposed over the first lower electrode, and a first upper electrode disposed over the first piezoelectric layer. The coupled resonator filter device further includes one or more acoustic coupling layers disposed over the first upper electrode, a second lower electrode disposed over the one or more acoustic coupling layers, a second piezoelectric layer disposed over the second lower electrode, a second upper electrode disposed over the second piezoelectric layer, and a first tuning capacitor having a first upper plate coupled to the first upper electrode and a first lower plate coupled to the first lower electrode.

A first filter is a hybrid filter including an acoustic wave filter, a plurality of first inductors, and a plurality of first capacitors. A high frequency module further includes a metal electrode layer covering at least part of a resin layer and at least part of an outer peripheral surface of a mounting substrate. Among a plurality of inductors including the plurality of first inductors of the first filter and a plurality of second inductors of a second filter, at least one inductor (the second inductor) is a circuit element including a conductor pattern portion formed in the mounting substrate. The shortest distance between the outer peripheral surface of the mounting substrate and a signal terminal (a third signal terminal) connected to the circuit element is longer than the shortest distance between the outer peripheral surface of the mounting substrate and the circuit element.

An electronic component includes a first main body including a plurality of dielectric layers stacked together, and a second main body mounted to the first main body. The second main body includes a first circuit section and a second circuit section that are each constituted by using at least one acoustic wave element and are electrically separated from each other. The first main body includes first to third ground conductor lavers located between the first and second circuit sections when seen in a Z direction.

A filter device, an RF front-end device and a wireless communication device are provided. The filter device includes a substrate, a passive device and at least one resonance device, wherein the passive device has a first side and a second side opposite to the first side, the substrate is located on the first side, and the at least one resonance device is located on the second side. The RF filter device formed by integrating the resonance device (such as an SAW or BAW resonance device) and the passive device (such as an IPD) can broaden the pass-band width, has a high out-of-band rejection, and occupies less space in an RF front-end chip.

A hybrid resonator includes an acoustic wave resonator (AWR) having a piezoelectric material; a first electrical contact, electrically conductively connected to the piezoelectric material; and a second electrical contact, electrically conductively connected to the piezoelectric material. The hybrid resonator further includes a first resonant circuit, electrically conductively connected in series or parallel to the acoustic wave resonator via at least one of the first electrical contact and the second electrical contact. The resonant circuit includes a first inductor, and a first capacitor; wherein, if the first resonant circuit is electrically conductively connected to the acoustic wave resonator in series, the first inductor and the first capacitor are electrically conductively connected to one another in parallel, and if the first resonant circuit is electrically conductively connected to the acoustic wave resonator in parallel, the first inductor and the first capacitor are electrically conductively connected to one another in series.