A filter and a method for forming a filter are disclosed. In an embodiment a filter includes a first port, a second port and a signal path between the first port and the second port. The filter further includes a plurality of series resonators electrically connected in series in the signal path, a plurality of shunt paths, each electrically connecting the signal path to ground and one parallel resonator electrically connected in each shunt path, wherein at least one series resonator is an electroacoustic resonator, and wherein at least one parallel resonator comprises one acoustically inactive capacitor or an electrical connection of an acoustically active resonator and a de-tuning coil.

A radio-frequency filter includes a first series-arm circuit and a second series-arm circuit that is on a circuit path closer to the output terminal than the first series-arm circuit. A first parallel-arm circuit is connected to a ground and a node on the path between the first series-arm circuit and the second series-arm circuit. The first series-arm circuit includes a first series-arm resonator, and a first switch element, the first switch element including first semiconductor elements arranged in series. The second series-arm circuit includes a second series-arm resonator, and a second switch element, the second switch element including at least one second semiconductor element. A first stack number being higher than a second stack number, the first stack number being a number of the first semiconductor elements and the second stack number being a number of the one or more second semiconductor elements.

A filter module includes a filter provided on a path connecting an input/output terminal and an input/output terminal, a filter provided on a path connecting an input/output terminal and an input/output terminal, a switch that switches between electrical connection and electrical disconnection between a wire connected to the input/output terminal and a ground, and a switch that switches between electrical connection and electrical disconnection between a wire connected to the input/output terminal and the ground. When the wire and the ground are electrically connected by the switch, the wire and the ground are electrically disconnected by the switch, and when the wire and the ground are electrically connected by the switch, the wire and the ground are electrically disconnected by the switch.

A composite electronic component includes a first acoustic wave filter, a second acoustic wave filter, a spacer layer, and a switch. The second acoustic wave filter faces the first acoustic wave filter in a first direction. The switch switches an ON state and an OFF state of the first acoustic wave filter and an ON state and an OFF state of the second acoustic wave filter. A first functional electrode and a second functional electrode are located in a hollow space and face each other in the first direction. The switch brings at least one of the first acoustic wave filter and the second acoustic wave filter into the OFF state.

A bulk acoustic resonator includes: a substrate including an upper surface on which a substrate protection layer is disposed; and a membrane layer forming a cavity together with the substrate, wherein a thickness deviation of either one or both of the substrate protection layer and the membrane layer is 170 or less.

A method for the batch production of acoustic wave filters comprises: synthesizing N theoretical filters, each filter defined by a set of j theoretical resonator(s) having a triplet C.sub.0ij,eq, .sub.rij,eq and .sub.aij,eq, these parameters grouped into subsets; determining a reference resonator structure for each subset, naturally having a resonant frequency .sub.r,ref, where .sub.aij,eq<.sub.r,ref<.sub.rij,eq; determining, for each theoretical resonator, an elementary building block comprising an intermediate resonator R.sub.ij, a parallel reactance Xp.sub.ij and/or a series reactance Xs.sub.ij, the intermediate resonator R.sub.ij having a triplet C.sub.0ij, .sub.r,ref and .sub.a,ref, the parameters C.sub.0ij, Xpij and/or Xs.sub.ij defined so the elementary building block has a triplet: C.sub.0ij,eq, .sub.rij,eq and .sub.aij,eq; determining the geometrical dimensions of the actual resonators R.sub.ij of the filters so they have a capacitance C.sub.0ij; producing each actual resonator; associating series and/or parallel reactances with actual resonators in order to form the elementary building blocks.

Packaged RF front end systems including a hybrid filter and an active circuit in a single package are described. In an example, a package includes an active die comprising an acoustic wave resonator. A package substrate is electrically coupled to the active die. A seal frame surrounds the acoustic wave resonator and is attached to the active die and to the package substrate, the seal frame hermetically sealing the acoustic wave resonator in a cavity between the active die and the package substrate.

RF front end systems or modules with an acoustic wave resonator (AWR) on an interposer substrate are described. In an example, an integrated system includes an active die, the active die comprising a semiconductor substrate having a plurality of active circuits therein. An interposer is also included, the interposer comprising an acoustic wave resonator (AWR). A seal frame couples the active die to the interposer, the seal frame surrounding the acoustic wave resonator and hermetically sealing the acoustic wave resonator between the active die and the interposer.

Techniques are disclosed for forming high frequency film bulk acoustic resonator (FBAR) devices that include a bottom electrode formed of a two-dimensional electron gas (2DEG). The disclosed FBAR devices may be implemented with various group III-nitride (III-N) materials, and in some cases, the 2DEG may be formed at a heterojunction of two epitaxial layers each formed of III-N materials, such as a gallium nitride (GaN) layer and an aluminum nitride (AlN) layer. The 2DEG bottom electrode may be able to achieve similar or increased carrier transport as compared to an FBAR device having a bottom electrode formed of metal. Additionally, in some embodiments where AlN is used as the piezoelectric material for the FBAR device, the AlN may be epitaxially grown which may provide increased performance as compared to piezoelectric material that is deposited by traditional sputtering techniques.

An acoustic impedance transformation circuit and related apparatus are provided. In aspects discussed herein, the acoustic impedance transformation circuit can be configured to transform an input impedance into an output impedance higher than the input impedance. In this regard, the acoustic impedance transformation circuit can be provided in an apparatus to enable impedance matching between two electrical circuits. As a result, it may be possible to reduce signal reflection resulting from impedance mismatch between the two circuits, thus helping to improve performance of the apparatus.