A filter may include a plurality of bulk acoustic wave resonators including one or more series resonators and one or more shunt resonators formed by a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on a substrate, a cap accommodating the plurality of bulk acoustic wave resonators therein, and one or more switches provided on the cap.

A filter module includes filters. Each of the filters is configured to control communications bands having overlapping bandwidths each with the other. Each of the communications bands, allocated to any one of the filters, has a different limit frequency from the other.

The invention relates to an acoustically coupled thin-film BAW filter, comprising a piezoelectric layer, an input-port on the piezoelectric layer changing electrical signal into an acoustic wave (SAW, BAW), and an output-port on the piezoelectric layer changing acoustic signal into electrical signal. In accordance with the invention the ports include electrodes positioned close to each other, and the filter is designed to operate in first order thickness-extensional TE1 mode.

An acoustic wave resonator includes: a substrate; a resonating portion formed on a first surface of the substrate; a metal pad connected to the resonating portion through a via hole formed in the substrate; and a protective layer disposed on a second surface of the substrate and including a plurality of layers, wherein the plurality of layers includes an internal protective layer directly in contact with the second surface of the substrate and formed of an insulating material including an adhesion that is stronger than an adhesion of other layers, among the plurality of layers.

Aspects and examples provide improvement in the attenuation level near the passband within the stopband of the bandpass-type filter using a ladder-type circuit formed by a BAW resonator. In one example the filter includes a ladder-type circuit formed by a bulk acoustic wave (BAW) resonator, and a loop circuit connected between two distinct points on a signal path extending from an input to an output of the ladder-type circuit for phase-cancellation of signals at the two distinct points. The two distinct points may be the input and the output of the ladder-type circuit. The loop circuit may include a SAW resonator or a BAW resonator. The BAW resonator may be a film bulk acoustic resonator (FBAR) or solidly mounted resonator (SMR).

Embodiments of resonator circuits and modulating resonators and are described generally herein. One or more acoustic wave resonators may be coupled in series or parallel to generate tunable filters. One or more acoustic wave resonances may be modulated by one or more capacitors or tunable capacitors. One or more acoustic wave modules may also be switchable in a filter. Other embodiments may be described and claimed.

A bulk-acoustic wave resonator includes: a membrane layer disposed on a substrate and forming a cavity; a lower electrode disposed on the membrane layer; a piezoelectric layer disposed on the lower electrode; an upper electrode disposed on the piezoelectric layer, and including a frame part disposed at an edge of an active area and having a thickness greater than that of a portion of the upper electrode disposed in a central portion of the active area; and a frequency adjusting layer disposed on the piezoelectric layer and the upper electrode. The frequency adjusting layer is excluded from an inclined surface of the frame part, or a thickness of a portion of the frequency adjusting layer on the inclined surface is less than that of other portions of the frequency adjusting layer. The frequency adjusting layer is disposed on a portion of the piezoelectric layer protruding from the upper electrode.

A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. A first patterned electrode is deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the first electrode and a planarized support layer is deposited over the sacrificial layer, which is then bonded to a substrate wafer. The crystalline substrate is removed and a second patterned electrode is deposited over a second surface of the film. The sacrificial layer is etched to release the air reflection cavity. Also, a cavity can instead be etched into the support layer prior to bonding with the substrate wafer. Alternatively, a reflector structure can be deposited on the first electrode, replacing the cavity.

An acoustic wave resonator includes: a first piezoelectric portion of a piezoelectric layer, disposed on a cavity and having a first average thickness; and a second piezoelectric portion of the piezoelectric layer, disposed adjacent to an edge of the first piezoelectric portion and having a second average thickness that is different from the first average thickness.

A bulk acoustic resonator includes: a substrate including an upper surface on which a substrate protection layer is disposed; and a membrane layer forming a cavity together with the substrate, wherein a thickness deviation of either one or both of the substrate protection layer and the membrane layer is 170 or less.