In some embodiments, a radio-frequency circuit or device can include a filter circuit having an input node and an output node. The filter circuit can further include a first assembly having one or more bulk acoustic wave resonators implemented electrically between the input node and the output node, and configured to filter a signal. The filter circuit can further include a second assembly having one or more surface acoustic wave resonators implemented electrically relative to the first assembly, and configured to suppress one or more harmonics resulting from the filtering of the signal by the first assembly.

A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. A first patterned electrode is deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the first electrode and a planarized support layer is deposited over the sacrificial layer, which is then bonded to a substrate wafer. The crystalline substrate is removed and a second patterned electrode is deposited over a second surface of the film. The sacrificial layer is etched to release the air reflection cavity. Also, a cavity can instead be etched into the support layer prior to bonding with the substrate wafer. Alternatively, a reflector structure can be deposited on the first electrode, replacing the cavity.

A notch filter and a multi-frequency notch filter. The notch filter includes at least one notch filtering unit, each of the at least one notch filtering unit includes an input port, an output port, at least three resonators and at least one inductive element, and the at least three resonators include at least two first resonators and at least one second resonator. The at least two first resonators are connected in series to each other, the at least two first resonators in series are connected in series between the input port and the output port, a first end of each of the at least one second resonator is connected to a connection point between two adjacent first resonators, and a second end of the each of the at least one second resonator is connected to a fixed potential end.

An acoustic resonator device includes a substrate and a piezoelectric plate. A first portion of the piezoelectric plate is on the substrate. A second portion of the piezoelectric forms a diaphragm suspended over a cavity in the substrate. An interdigital transducer (IDT) is on a surface of the piezoelectric plate, the IDT including first and second busbars on the first portion and interleaved IDT fingers on the diaphragm. A plurality of tethers support the diaphragm over the cavity, each tether providing an electrical connection between a corresponding one of the interleaved IDT fingers and one of the first and second busbars.

A bulk acoustic wave (BAW) resonator includes a solidly mounted reflector, for example, a Bragg-type reflector, a piezoelectric layer, and first and second electrodes on first and second surfaces, respectively, of the piezoelectric layer. A filter device or filter system includes at least one BAW resonator. Related methods of fabrication include forming the BAW resonator.

A combination filter comprises a notch filter formed of acoustic wave resonators and a cavity filter electrically in series with the notch filter to provide for the combination filter to operate at higher powers and frequencies.

The invention relates to an acoustically coupled thin-film BAW filter, comprising a piezoelectric layer, an input-port on the piezoelectric layer changing electrical signal into an acoustic wave (SAW, BAW), and an output-port on the piezoelectric layer changing acoustic signal into electrical signal. In accordance with the invention the ports include electrodes positioned close to each other, and the filter is designed to operate in first order thickness-extensional TE1 mode.

A multiplexer includes a band pass filter configured to pass a signal in a predetermined frequency band between a first terminal and a common terminal connected to an antenna, and a band elimination filter configured to attenuate a signal in the predetermined frequency band between a second terminal and the common terminal and includes resonators connected in series with a line between the second terminal and the common terminal. The resonators include a first resonator having a lowest resonant frequency and a second resonator disposed on a side of the common terminal from the first resonator.

An acoustic resonator is fabricated by forming a patterned first photoresist mask on a piezoelectric plate at locations of a desired interdigital transducer (IDT) pattern. An etch-stop layer is then deposited on the plate and first photoresist mask. The first photoresist mask is removed to remove parts of the etch-stop and expose the plate. An IDT conductor material is deposited on the etch stop and the exposed plate. A patterned second photoresist mask is then formed on the conductor material at locations of the IDT pattern. The conductor material is then etched over and to the etch-stop to form the IDT pattern which has interleaved fingers on a diaphragm to span a substrate cavity. A portion of the plate and the etch-stop form the diaphragm. The etch-stop and photoresist mask are impervious to this etch. The second photoresist mask is removed to leave the IDT pattern.

Radio frequency (RF) acoustic wave resonator (AWR) filter circuits and methods. Embodiments essentially de-couple the stopband or notch characteristics of an RF filter from the passband characteristics. Accordingly, the de-coupled parameters can be individually designed to meet the specifications of a particular application. Partially-hybridized or fully-hybridized series-arm and parallel-arm AWR filter building blocks enable “de-coupled” RF filters having (1) wideband and low insertion loss passbands and (2) wideband deep notches (stopbands) with a specifically placed notch center frequency, without compromising the passband characteristics. The AWR filter building blocks include an inductance L that matches (resonates with) the electrostatic capacitance CO of the corresponding AWR within a desired passband. The resonance and anti-resonance frequencies of the building block AWRs are selected to be spaced apart from the specified passband in order to provide independent stopband or notch characteristics without substantially affecting the passband characteristics.