Patent classifications
H03H9/6406
SWITCHABLE ACOUSTIC WAVE FILTER AND RELATED MULTIPLEXERS
Aspects of this disclosure relate to a multiplexer that includes a switchable acoustic wave filter. The switchable acoustic wave filter can include one or more acoustic wave resonators, switchable acoustic wave resonators, and a switch configurable into at least a first state and a second state. The switch can select a different subset of the switchable acoustic wave resonators to filter a radio frequency signal together with at least the one or more acoustic wave resonators in the first state than in the second state. Related filters, radio frequency systems, wireless communication devices, and methods are also disclosed.
Filter and multiplexer
A filter includes a series arm resonator that defines at least a portion of a signal path connected between first and second terminals, a parallel arm resonator including one end that is grounded, a first inductor including one end that is connected to one end of the series arm resonator and another end that is connected to another end of the parallel arm resonator, and a second inductor including one end that is connected to another end of the series arm resonator and another end that is connected to the other end of the parallel arm resonator. A relative band width of the parallel arm resonator is smaller than a relative band width of the series arm resonator.
SURFACE ACOUSTIC WAVE (SAW) FILTER PACKAGES EMPLOYING AN ENHANCED THERMALLY CONDUCTIVE CAVITY FRAME FOR HEAT DISSIPATION, AND RELATED FABRICATION METHODS
Surface acoustic wave (SAW) filter packages employing an enhanced thermally conductive cavity frame for heat dissipation, and related fabrication methods are disclosed. The SAW filter package also includes a cavity frame comprising a perimeter structure and a cavity inside the perimeter structure coupled to a substrate of a piezoelectric material that contains interdigital transducers (IDTs). A cap substrate is disposed on the perimeter structure of the cavity frame to enclose an air cavity inside the perimeter structure between a substrate and the cap substrate. In exemplary aspects, to effectively dissipate heat generated in the SAW filter package to maintain the desired performance of the SAW filter, the cavity frame is comprised of a material that has an enhanced thermal conductivity. The heat generated in the SAW filter package can more effectively be dissipated, particularly at edges and corners of the cavity frame where hot spots can particularly occur.
Stacked temperature compensated acoustic wave device with high thermal conductivity
An electronic device comprises a first substrate having a first surface bonded to a first surface of a second substrate, one or more acoustic wave devices disposed on the first surface of each of the first substrate and the second substrate, and a thermally conductive layer disposed on a second surface of the first substrate opposite the first surface of the first substrate. The thermally conductive layer has a higher thermal conductivity than a material of which the first substrate is formed to reduce an operating temperature of the first substrate.
Elastic wave device
A longitudinally coupled resonator elastic wave filter is disposed on a piezoelectric substrate. IDT electrodes include first and second busbars. An inorganic insulating layer is provided on at least one side in a direction perpendicular or substantially perpendicular to an elastic wave propagation direction to cover the first or second busbars, and a first wiring line is disposed on the inorganic insulating layer to extend in the elastic wave propagation direction. A second wiring line three-dimensionally crosses the first wiring line with the inorganic insulating layer interposed therebetween. The first wiring line is connected to busbars, which are connected to the same potential, by extending through the inorganic insulating layer.
High-frequency filter circuit, high-frequency front end circuit, and communication device
A filter (22A) includes: a series arm circuit (11) that is connected between an input/output terminal (22m) and an input/output terminal (22n); and a parallel arm circuit (12) that is connected between a node (x1), which is on a path that connects the input/output terminal (22m) and the input/output terminal (22n), and ground. The parallel arm circuit (12) includes a parallel arm resonator (22p) and an impedance circuit (13) that is serially connected to the parallel arm resonator (22p). The impedance circuit (13) includes a first impedance element, which is one of an inductor and a capacitor, a second impedance element, which is the other of an inductor and a capacitor, and a switch (22SW) that is serially connected to the second impedance element. A first series circuit (14) comprising of the second impedance element and the switch (22SW) is connected in parallel with the first impedance element.
SAW MULTIPLEXER WITH SWA FILTERS HAVING DIFFERENT BANDWIDTHS DUE TO DIELECTRIC LAYER BETWEEN IDT AND PIEZOELECTRIC LAYER ADJUSTING ACOUPLING FACTOR
The SAW filter chip comprises a plurality of SAW filters (1, 2), wherein at least one of the several electric filters is a first-type electric filter (1) comprising at least one first-type SAW-resonator (10). The first-type SAW-resonator comprises a piezoelectric layer (11), an intermediate layer (12) on the piezoelectric layer (11) and an interdigital electrode structure (13) on the intermediate layer (12). The interdigital electrode structure is separated from the piezoelectric layer by the intermediate layer. The intermediate layer is made of a dielectric, non-piezoelectric material and adjusts the electromechanical coupling factor and the bandwidth of the respective filter. The plurality of SAW filters form an LTE multiplexer, wherein the thickness of the intermediate layer is chosen to adjust the required bandwidth to the desired bands. The intermediate layer may be absent for larger required bandwidths.
Elastic wave device and manufacturing method therefor, radio-frequency front-end circuit, and communication device
An elastic wave device includes a piezoelectric body including a main surface, an IDT electrode provided on the main surface of the piezoelectric body, and a wiring electrode provided on the main surface of the piezoelectric body and electrically connected to the IDT electrode, in which the wiring electrode includes a portion that extends to an edge of the main surface of the piezoelectric body, and a width of the wiring electrode on the edge is narrower than a width of the wiring electrode in a portion not on the edge.
HIGH FREQUENCY MODULE AND COMMUNICATION APPARATUS
A first filter is a hybrid filter including an acoustic wave filter, a plurality of first inductors, and a plurality of first capacitors. A high frequency module further includes a metal electrode layer covering at least part of a resin layer and at least part of an outer peripheral surface of a mounting substrate. Among a plurality of inductors including the plurality of first inductors of the first filter and a plurality of second inductors of a second filter, at least one inductor (the second inductor) is a circuit element including a conductor pattern portion formed in the mounting substrate. The shortest distance between the outer peripheral surface of the mounting substrate and a signal terminal (a third signal terminal) connected to the circuit element is longer than the shortest distance between the outer peripheral surface of the mounting substrate and the circuit element.
Filter device, RF front-end device and wireless communication device
A filter device, an RF front-end device and a wireless communication device are provided. The filter device includes a substrate, a passive device and at least one resonance device, wherein the passive device has a first side and a second side opposite to the first side, the substrate is located on the first side, and the at least one resonance device is located on the second side. The RF filter device formed by integrating the resonance device (such as an SAW or BAW resonance device) and the passive device (such as an IPD) can broaden the pass-band width, has a high out-of-band rejection, and occupies less space in an RF front-end chip.