Acoustic filtering circuitry includes a piezoelectric layer, a dielectric layer, a plurality of acoustic resonators, and a capacitor. The dielectric layer is over a surface of the piezoelectric layer. The plurality of acoustic resonators each includes a transducer on the surface of the piezoelectric layer such that the transducer is between the piezoelectric layer and the dielectric layer. The capacitor includes a first plate on the surface of the piezoelectric layer such that the first plate is between the piezoelectric layer and the dielectric layer and a second plate over the first plate such that the second plate and the first plate are separated by at least a portion of the dielectric layer.

An elastic wave device includes a piezoelectric substrate made of lithium niobate, an interdigital transducer electrode on the piezoelectric substrate, and a silicon oxide layer that covers the interdigital transducer electrode. The interdigital transducer electrode includes an AlCu layer and a metal layer disposed closer to the piezoelectric substrate than the AlCu layer, the metal layer having a higher density than the silicon oxide layer. The AlCu layer has a Cu concentration of about 13% or more by weight.

A ladder filter in which the pass band is defined by serial arm resonators and first and second parallel arm resonators includes the serial arm resonators, the first and second parallel arm resonators, and a third parallel arm resonator. The third parallel arm resonator is connected in parallel to the first parallel arm resonator, the electrostatic capacitance of the third parallel arm resonator is smaller than that of the first parallel arm resonator, and the anti-resonant frequency of the third parallel arm resonator is positioned outside the pass band of the ladder filter. The anti-resonant frequency of the first parallel arm resonator is positioned at the high frequency side of the anti-resonant frequencies of the second parallel arm resonators.

A problem is improved in which a plurality of duplexers has to be used if at least one of a transmission band and reception band for a handheld terminal partially overlaps a frequency band used in another communication system. A duplexer device includes a duplexer configured to include an antenna terminal, a transmission terminal and a reception terminal and to have a specific transmission band and reception band and a band-stop filter connected to at least one of the antenna terminal, the transmission terminal and the reception terminal via a switch and configured to suppress some of at least one of the specific transmission band and reception band in response to the switching of the switch.

An elastic wave device includes a first filter including an elastic wave resonator and a second filter connected to an antenna common terminal via a common node. When a first pass band of the first filter and second pass bands of the second filters are F1 and F2, respectively, F1<F2. The first filter includes at least one elastic wave resonator, and the elastic wave resonator uses Rayleigh waves propagating on a piezoelectric substrate made of LiNbO.sub.3, IDT electrodes including a Pt film on a piezoelectric layer made of LiNbO.sub.3, and a silicon oxide film covering the IDT electrodes. The thickness of the silicon oxide layer is about 33% or less of the wavelength of the IDT electrodes.

A high-frequency filter (10) includes resonators (21, 31, and 32), an inductor (41), and a switch (51). The resonator (21) is connected between a first input/output terminal (P1) and a second input/output terminal (P2). One end of the inductor (41) is connected between the resonator (21) and the first input/output terminal (P1). One end of the resonator (31) is connected to the other end of the inductor (41). The switch (51) selects either a connection portion that connects the inductor (41) and the resonator (31) or the resonator (32) and connects either the connection portion or the resonator (32), which has been selected, to a terminal of the resonator (21) on the side of the second input/output terminal (P2). The switching between the connection modes of the switch (51) changes the circuit configuration of the high-frequency filter (10).

An elastic wave apparatus includes a piezoelectric substrate, a first dielectric film provided on the piezoelectric substrate, an IDT electrode provided on the first dielectric film, and a capacitor that includes a pair of comb-shaped electrodes provided directly on the piezoelectric substrate and is electrically connected to the IDT electrode. An elastic wave resonator including the IDT electrode is provided.

A surface acoustic wave (SAW) filter includes a bottom substrate, a piezoelectric layer disposed above the bottom substrate, the piezoelectric layer having a bottom surface facing the bottom substrate and a top surface opposite to the bottom surface, a lower cavity disposed below the piezoelectric layer, an interdigital transducer (IDT) disposed on the top surface of the piezoelectric layer, and a back electrode disposed on the bottom surface of the piezoelectric layer, and exposed in the lower cavity.

A high-frequency module that performs filtering of signals transmitted and received through an antenna includes an antenna terminal, a transmission terminal, a reception terminal, a reception filter connected between the antenna terminal and the reception terminal, a transmission filter connected between the antenna terminal and the transmission terminal, a first element connected between the antenna terminal and the transmission filter, and a second element connected in series between the transmission terminal and the transmission filter. The first element and the second element are capacitively coupled to each other.

A surface acoustic wave (SAW) filter includes a bottom substrate, a piezoelectric layer disposed above the bottom substrate, the piezoelectric layer having a bottom surface facing the bottom substrate and a top surface opposite to the bottom surface, a lower cavity disposed below the piezoelectric layer, an interdigital transducer (IDT) disposed on the top surface of the piezoelectric layer, and a back electrode disposed on the bottom surface of the piezoelectric layer, and exposed in the lower cavity.