The present disclosure relates to plasma generation systems which utilize plasma for semiconductor processing. The plasma generation system disclosed herein employs a hybrid matching network. The plasma generation system includes a RF generator and a matching network. The matching network includes a first-stage to perform low-Q impedance transformations during high-speed variations in impedance. The matching network includes a second-stage to perform impedance matching for high-Q impedance transformations. The matching network further includes a sensor coupled to the first-stage and the second-stage to calculate the signals that are used to engage the first and second-stages. The matching network includes a first-stage network that is agile enough to tune each state in a modulated RF waveform and a second-stage network to tune a single state in a RF modulated waveform. The plasma generation system also includes a plasma chamber coupled to the matching network.

The present disclosure relates to plasma generation systems which utilize plasma for semiconductor processing. The plasma generation system disclosed herein employs a hybrid matching network. The plasma generation system includes a RF generator and a matching network. The matching network includes a first-stage to perform low-Q impedance transformations during high-speed variations in impedance. The matching network includes a second-stage to perform impedance matching for high-Q impedance transformations. The matching network further includes a sensor coupled to the first-stage and the second-stage to calculate the signals that are used to engage the first and second-stages. The matching network includes a first-stage network that is agile enough to tune each state in a modulated RF waveform and a second-stage network to tune a single state in a RF modulated waveform. The plasma generation system also includes a plasma chamber coupled to the matching network.

A drive circuit performs switching between an on-state and an off-state of a PIN diode, the drive circuit being provided with a switching element and a switching element, a drive power supply, and a current limiting resistor that adjusts a forward current of the PIN diode. When the switching element is in an on-state and the switching element is in an off-state, the PIN diode is switched to the on-state by applying a forward voltage to the PIN diode from the drive power supply via the current limiting resistor, and when the switching element is in the off-state and the switching element is in the on-state, the PIN diode is switched to the off-state by applying, not via the current limiting resistor, a reverse voltage to the PIN diode from the drive power supply.

A drive circuit performs switching between an on-state and an off-state of a PIN diode, the drive circuit being provided with a switching element and a switching element, a drive power supply, and a current limiting resistor that adjusts a forward current of the PIN diode. When the switching element is in an on-state and the switching element is in an off-state, the PIN diode is switched to the on-state by applying a forward voltage to the PIN diode from the drive power supply via the current limiting resistor, and when the switching element is in the off-state and the switching element is in the on-state, the PIN diode is switched to the off-state by applying, not via the current limiting resistor, a reverse voltage to the PIN diode from the drive power supply.

Automatic impedance matching measures the RF source frequency and RF load voltage, current and phase to determine a single match solution for a capacitive value of the variable capacitor and an inductive value for the variable inductor, and whether a shunt reactance is coupled to the RF source or RF load. Once the capacitance and inductance values for a match solution are determined they are contemporaneously selected without any iterative searching necessary for the match solution.

Automatic impedance matching measures the RF source frequency and RF load voltage, current and phase to determine a single match solution for a capacitive value of the variable capacitor and an inductive value for the variable inductor, and whether a shunt reactance is coupled to the RF source or RF load. Once the capacitance and inductance values for a match solution are determined they are contemporaneously selected without any iterative searching necessary for the match solution.

A drive circuit performs switching between an on-state and an off-state of a PIN diode, the drive circuit being provided with a switching element and a switching element, a drive power supply, and a current limiting resistor that adjusts a forward current of the PIN diode. When the switching element is in an on-state and the switching element is in an off-state, the PIN diode is switched to the on-state by applying a forward voltage to the PIN diode from the drive power supply via the current limiting resistor, and when the switching element is in the off-state and the switching element is in the on-state, the PIN diode is switched to the off-state by applying, not via the current limiting resistor, a reverse voltage to the PIN diode from the drive power supply.

A drive circuit performs switching between an on-state and an off-state of a PIN diode, the drive circuit being provided with a switching element and a switching element, a drive power supply, and a current limiting resistor that adjusts a forward current of the PIN diode. When the switching element is in an on-state and the switching element is in an off-state, the PIN diode is switched to the on-state by applying a forward voltage to the PIN diode from the drive power supply via the current limiting resistor, and when the switching element is in the off-state and the switching element is in the on-state, the PIN diode is switched to the off-state by applying, not via the current limiting resistor, a reverse voltage to the PIN diode from the drive power supply.

Automatic impedance matching measures the RF source frequency and RF load voltage, current and phase to determine a single match solution for a capacitive value of the variable capacitor and an inductive value for the variable inductor, and whether a shunt reactance is coupled to the RF source or RF load. Once the capacitance and inductance values for a match solution are determined they are contemporaneously selected without any iterative searching necessary for the match solution.

Automatic impedance matching measures the RF source frequency and RF load voltage, current and phase to determine a single match solution for a capacitive value of the variable capacitor and an inductive value for the variable inductor, and whether a shunt reactance is coupled to the RF source or RF load. Once the capacitance and inductance values for a match solution are determined they are contemporaneously selected without any iterative searching necessary for the match solution.