A display device includes a silicon wafer including digital circuits, a micro-light emitting diode (micro-LED) wafer including an array of micro-LEDs, and an indium-gallium-zinc-oxide (IGZO) layer between the silicon wafer and the micro-LED wafer and including analog circuits. The digital circuits are characterized by a first operating supply voltage and are configured to generate digital control signals based on digital display data of an image frame. The analog circuits are characterized by a second operating supply voltage higher than the first operating supply voltage. The analog circuits includes analog storage devices configured to storing analog signals, and transistors controlled by the digital control signals and the analog signals to generate drive currents for driving the array of micro-LEDs. The digital circuits on the silicon wafer or the analog circuits in the IGZO layer include level-shifting circuits at interfaces between the digital circuits and the analog circuits.

A display device includes a silicon wafer including digital circuits, a micro-light emitting diode (micro-LED) wafer including an array of micro-LEDs, and an indium-gallium-zinc-oxide (IGZO) layer between the silicon wafer and the micro-LED wafer and including analog circuits. The digital circuits are characterized by a first operating supply voltage and are configured to generate digital control signals based on digital display data of an image frame. The analog circuits are characterized by a second operating supply voltage higher than the first operating supply voltage. The analog circuits includes analog storage devices configured to storing analog signals, and transistors controlled by the digital control signals and the analog signals to generate drive currents for driving the array of micro-LEDs. The digital circuits on the silicon wafer or the analog circuits in the IGZO layer include level-shifting circuits at interfaces between the digital circuits and the analog circuits.

An apparatus includes a core logic circuit, one or more integrated clock-gating (ICG) cells, and one or more ICG control cells (ICCs). The core logic circuit generally comprises a plurality of flip-flops. The plurality of flip-flops may be connected to form one or more scan chains. Each of the one or more integrated clock-gating (ICG) cells may be configured to gate a clock signal of a respective one of the one or more scan chains. Each of the one or more ICG control cells may be configured to control a respective one or more of the one or more ICG cells.

An apparatus includes a core logic circuit, one or more integrated clock-gating (ICG) cells, and one or more ICG control cells (ICCs). The core logic circuit generally comprises a plurality of flip-flops. The plurality of flip-flops may be connected to form one or more scan chains. Each of the one or more integrated clock-gating (ICG) cells may be configured to gate a clock signal of a respective one of the one or more scan chains. Each of the one or more ICG control cells may be configured to control a respective one or more of the one or more ICG cells.

Duty cycles of pulse width modulation (“PWM”) pulses are determined by measurements taken with respect to an internally generated clock signal. One of these measurements calculates, in a continuous dynamic manner, a ratio of the number of cycles of the internally generated clock signal to one or more cycles of a PWM clock signal utilized as a time base for generation of the PWM pulses. This clock ratio measurement designates how many cycles of the internally generated clock signal will be used to designate a first portion of a duty cycle for each PWM pulse. Another measurement is utilized to determine a fractional portion of a cycle of the internally generated clock signal that will be used to designate a second portion of the duty cycle for each PWM pulse.

Duty cycles of pulse width modulation (“PWM”) pulses are determined by measurements taken with respect to an internally generated clock signal. One of these measurements calculates, in a continuous dynamic manner, a ratio of the number of cycles of the internally generated clock signal to one or more cycles of a PWM clock signal utilized as a time base for generation of the PWM pulses. This clock ratio measurement designates how many cycles of the internally generated clock signal will be used to designate a first portion of a duty cycle for each PWM pulse. Another measurement is utilized to determine a fractional portion of a cycle of the internally generated clock signal that will be used to designate a second portion of the duty cycle for each PWM pulse.

A current mode control modulation includes a ramp signal generator generating a slope compensated ramp signal with slope compensation. In some embodiments, the ramp signal generator generates a ramp signal for the current control loop having a first ramp portion with slope compensation and a second ramp portion that matches the expected current mode signal. In some embodiments, the ramp signal generator includes a switched capacitor circuit supplied by a current circuit to charge or discharge nodes in the switched capacitor circuit to generate the ramp signal with slope compensation.

A current mode control modulation includes a ramp signal generator generating a slope compensated ramp signal with slope compensation. In some embodiments, the ramp signal generator generates a ramp signal for the current control loop having a first ramp portion with slope compensation and a second ramp portion that matches the expected current mode signal. In some embodiments, the ramp signal generator includes a switched capacitor circuit supplied by a current circuit to charge or discharge nodes in the switched capacitor circuit to generate the ramp signal with slope compensation.

A semiconductor device includes: a first latch circuit that includes a first inverting circuit, a second inverting circuit, a third inverting circuit, and a fourth inverting circuit; a first first-type well region; a second first-type well region; and a second-type well region. In a plan view, a distance between a drain of a first-type MOS transistor in the first inverting circuit and a drain of a first-type MOS transistor in the third inverting circuit is longer than a distance between the drain of the first-type MOS transistor in the first inverting circuit and a drain of a first-type MOS transistor in the fourth inverting circuit.

The present disclosure relates to clock circuits, computing chips, hash boards and data processing devices. A clock circuit comprises M stages of clock drive circuits that are connected in series, M being an integer that is no less than 2, wherein N inverters connected in series are arranged between an input port and an output port of each stage of the M stages of clock drive circuits, N being an odd number that is no less than 3. The clock circuit may provide clock signals with excellent performance.