A plasma deposition system comprising a wafer platform, a second electrode, a first electrode, a first high voltage pulser, and a second high voltage pulser. In some embodiments, the second electrode may be disposed proximate with the wafer platform. In some embodiments, the second electrode can include a disc shape with a central aperture; a central axis, an aperture diameter, and an outer diameter. In some embodiments, the first electrode may be disposed proximate with the wafer platform and within the central aperture of the second electrode. In some embodiments, the first electrode can include a disc shape, a central axis, and an outer diameter. In some embodiments, the first high voltage pulser can be electrically coupled with the first electrode. In some embodiments, the second high voltage pulser can be electrically coupled with the second electrode.

A plasma deposition system comprising a wafer platform, a second electrode, a first electrode, a first high voltage pulser, and a second high voltage pulser. In some embodiments, the second electrode may be disposed proximate with the wafer platform. In some embodiments, the second electrode can include a disc shape with a central aperture; a central axis, an aperture diameter, and an outer diameter. In some embodiments, the first electrode may be disposed proximate with the wafer platform and within the central aperture of the second electrode. In some embodiments, the first electrode can include a disc shape, a central axis, and an outer diameter. In some embodiments, the first high voltage pulser can be electrically coupled with the first electrode. In some embodiments, the second high voltage pulser can be electrically coupled with the second electrode.

A data synthesizer includes a first input circuit, a second input circuit, and an output circuit. The first input circuit is configured to latch a first data under control of a first latch clock signal. The second input circuit is configured to latch a second data under control of the first latch clock signal. A phase of the first data is the same as a phase of the second data. The output circuit is connected to the first input circuit and the second input circuit. The output circuit is configured to output the first data and the second data in sequence.

A data synthesizer includes a first input circuit, a second input circuit, and an output circuit. The first input circuit is configured to latch a first data under control of a first latch clock signal. The second input circuit is configured to latch a second data under control of the first latch clock signal. A phase of the first data is the same as a phase of the second data. The output circuit is connected to the first input circuit and the second input circuit. The output circuit is configured to output the first data and the second data in sequence.

Some embodiments may include a nanosecond pulser comprising a plurality of solid state switches; a transformer having a stray inductance, L.sub.s, a stray capacitance, C.sub.s, and a turn ratio n; and a resistor with a resistance, R, in series between the transformer and the switches. In some embodiments, the resonant circuit produces a Q factor according to $Q=\frac{1}{R}\sqrt{\frac{L_s}{C_s}};$
and the nanosecond pulser produces an output voltage V.sub.out from an input voltage V.sub.in, according to V.sub.out=QnV.sub.in.

Some embodiments may include a nanosecond pulser comprising a plurality of solid state switches; a transformer having a stray inductance, L.sub.s, a stray capacitance, C.sub.s, and a turn ratio n; and a resistor with a resistance, R, in series between the transformer and the switches. In some embodiments, the resonant circuit produces a Q factor according to $Q=\frac{1}{R}\sqrt{\frac{L_s}{C_s}};$
and the nanosecond pulser produces an output voltage V.sub.out from an input voltage V.sub.in, according to V.sub.out=QnV.sub.in.

Methods and devices for determining integrated circuit (IC) device degradation over time are provided. Transistors are the basic building blocks of IC devices. The degradation of the transistors in IC devices over time leads slowly to decreased switching speeds. To monitor the condition of an IC device as it ages, oscillator circuitry operating at switching frequencies of various circuits in the IC device may be included and monitored for changes in switching frequency over time. A degraded condition of the IC device may be determined when the change in switching frequency exceeds a threshold value.

Methods and devices for determining integrated circuit (IC) device degradation over time are provided. Transistors are the basic building blocks of IC devices. The degradation of the transistors in IC devices over time leads slowly to decreased switching speeds. To monitor the condition of an IC device as it ages, oscillator circuitry operating at switching frequencies of various circuits in the IC device may be included and monitored for changes in switching frequency over time. A degraded condition of the IC device may be determined when the change in switching frequency exceeds a threshold value.

Some embodiments include a nonlinear transmission line system comprising: a power supply providing voltages greater than 100 V; a high frequency switch electrically coupled with the power supply; a nonlinear transmission line electrically coupled with the switch; an antenna electrically coupled with the nonlinear transmission line; and an energy recovery circuit comprising a diode and an inductor electrically coupled with the power supply and the antenna.

Some embodiments include a thermal management system for a nanosecond pulser. In some embodiments, the thermal management system may include a switch cold plates coupled with switches, a core cold plate coupled with one or more transformers, resistor cold plates coupled with resistors, or tubing coupled with the switch cold plates, the core cold plates, and the resistor cold plates. The thermal management system may include a heat exchanger coupled with the resistor cold plates, the core cold plate, the switch cold plate, and the tubing. The heat exchanger may also be coupled with a facility fluid supply.