A semiconductor device includes a logic circuit capable of storing configuration data. The logic circuit includes a latch circuit, an arithmetic circuit, a delay circuit, and a first output timing generation circuit. The latch circuit has a function of receiving a pulse signal and a reset signal and outputting a first signal. The delay circuit has a function of receiving the first signal and outputting a second signal. The first signal controls power supply to the arithmetic circuit and the delay circuit. The second signal is obtained by delaying the first signal so as to correspond to a delay in a critical path of the arithmetic circuit. The first output timing generation circuit has a function of receiving a third signal obtained by a logical operation on the first signal and the second signal and outputting the reset signal.

A memory system includes a first memory bank, a first path selector, a second memory bank, a second path selector, and a sensing device. The first memory bank includes a plurality of first memory cells. The second memory bank includes a plurality of second memory cells. The first path selector includes a plurality of input terminals coupled to the first memory cells through a plurality of first bit lines, and two output terminals. The second path selector includes a plurality of input terminals coupled to the second memory cells through a plurality of second bit lines, and two output terminals. The sensing device is coupled to the output terminals of the first bank selector and the second bank selector, and senses the difference between currents outputted from two of the reference current source, and the terminals of the two bank selectors according to the required operations.

A non-volatile memory (NVM) includes a fin structure, a first fin field effect transistor (FinFET), a second FinFET, an antifuse structure, a third FinFET, and a fourth FinFET. The antifuse structure is formed on the fin structure and has a sharing gate, a single diffusion break (SDB) isolation structure, a first source/drain region, and a second source/drain region. The SDB isolation structure isolates the first source/drain region and the second source/drain region. The first FinFET, the second FinFET and the first antifuse element compose a first one time programmable (OTP) memory cell, and the third FinFET, the fourth FinFET and the second antifuse element compose a second OTP memory cell. The first OTP memory cell and the second OTP memory cell share the antifuse structure.

A charge pump circuit includes a voltage input port, a voltage output port, a plurality of charge pump units cascaded between the voltage input port and the voltage output port, a clock signal source, and N clock delay elements. The clock signal source generates a main clock signal and the N clock delay elements generate clock signals received by the charge pump units by delaying the main clock signal. The main clock signal received by the first charge pump unit has a rising edge leading a rising edge of the last clock signal received by the last charge pump unit, and a falling edge lagging the rising edge of the last clock signal. Each of the charge pump units includes two sets of inverters with delay elements for generating two complementary clock signals.

A circuit includes a first switch, a second switch, a first delay circuit and a second delay circuit. The first switch includes a first terminal, and the second switch includes a second terminal. The first circuit is coupled to the first terminal and the second terminal. The first circuit is configured to alternately turn ON the first switch and the second switch in accordance with an input signal and a delay setting. The delay setting corresponds to a delay between successive ON times of the first switch and the second switch. The second circuit is coupled to the first circuit. The second circuit is configured to monitor a first voltage on the first terminal and a second voltage on the second terminal, and to generate the delay setting based on at least the first voltage on the first terminal, or the second voltage on the second terminal.

A delay cell for generating a desired delay exceeding a minimum delay defined in a standard cell library is provided, which includes a delay element and an output inverter. The delay element receives an input signal to generate an internal signal with a propagation delay relative to the input signal, which includes a P-type transistor, a first resistor, a second resistor, and an N-type transistor. The P-type transistor applies a supply voltage to the first resistor by the input signal. The first resistor is coupled between the P-type transistor and the output inverter. The second resistor is coupled to the output inverter and coupled to the ground through the N-type transistor by the input signal. The output inverter receives the internal signal to generate an output signal with the desired delay, which is dominated by the propagation delay, relative to the input signal.

A leakage current-based delay circuit is provided, wherein the delay circuit may include a first transistor circuit and a second transistor circuit, each transistor circuit may include a p-type transistor, an n-type transistor, an n-node between a drain node of the p-type transistor and a gate node of the n-type transistor, and a p-node between a gate node of the p-type transistor and a drain node of the n-type transistor. The p-node of the second transistor circuit may be charged based on a power source voltage through the first transistor circuit during a first time interval of an input signal, and the n-node of the second transistor circuit may be discharged based on a ground voltage through the first transistor circuit during the first time interval.

A delay line circuit includes: a coarse-tuning arrangement, including delay units; and a fine-tuning arrangement including at least three serially-connected inverters. The coarse-tuning arrangement is configured to receive an input signal and coarsely-tune the input signal, the coarsely-tuning including transferring the input signal through a selected number of the delay units and thereby producing a first output signal. The fine-tuning arrangement is configured to receive the first output signal, finely-tune the first output signal, and produce a second output signal, the finely-tuning including selectively connecting a speed control unit to a node between a corresponding pair of the at least three serially-connected inverters.

Described herein is an apparatus and system for generating a signal with phase angle configuration. The apparatus comprises an array of switch-resistors, each switch resistor to receive a control signal, wherein the array of switch-resistors to generate an output signal; and a circuit to configure phase angle of the output signal. The apparatus can be used for different package and inductor configurations. The apparatus provides flexibility to mitigate switching noise by adjusting phase angles, and provides the ability to enable and disable switch-resistors on the fly without ripples. The apparatus also saves power consumption by selectively turning off switch-resistors when phases are disabled. The output signal of the apparatus has smooth triangular waveforms for improving the quality of power supply generated using the output signal. Overall, the apparatus exhibits reduced sensitivity to process variations compared to traditional signal generators.

Provided is an active true time delay apparatus for delaying a time and producing a gain in a superhigh frequency band using a field effect transistor (FET) and a similar semiconductor device. The active true time delay apparatus may include a delayer configured to delay an input signal for a predetermined length of time using at least one FET element connected in a distributed amplifier structure and an outputter configured to output the delayed input signal, and the delayer is disposed on a transmission line between an inputter and the outputter.