H03K2005/00195

CURRENT-STARVING IN TUNABLE-LENGTH DELAY (TLD) CIRCUITS EMPLOYABLE IN ADAPTIVE CLOCK DISTRIBUTION (ACD) SYSTEMS FOR COMPENSATING SUPPLY VOLTAGE DROOPS IN INTEGRATED CIRCUITS (ICs)
20200028514 · 2020-01-23 ·

Current-starving in tunable-length delay (TLD) circuits in adaptive clock distribution (ACD) systems for compensating voltage droops in clocked integrated circuits (ICs) is disclosed. Voltage droops slow propagation of signals in clocked circuits. However, clock delay circuits in a TLD circuit increase a clock period by increasing a clock delay in response to a voltage droop. In large power distribution networks (PDN), impedance can delay and reduce the magnitude of voltage droops experienced at the TLD circuit. If the voltage droop at the TLD circuit is smaller than at the clocked circuit, then the clock period isn't stretched enough to compensate the slowed clocked circuit. A current-starved TLD circuit starves the clock delay circuits of current in response to a voltage droop indication, which further increases the clock signal delay, and further stretches the clock period to overcome a larger voltage droop in clocked circuits in other areas of the IC.

Sub-clock current pulse generator

A delay locked loop includes a control loop receiving reference and feedback clock signals, and generating biasing voltages therefrom. A delay chain receives the reference clock signal and generates N successively delayed versions thereof, each at a successive tap thereof. The Nth delayed version is the feedback clock signal. The control loop has a phase detector asserting an up signal when a phase of the feedback clock signal lags that of the reference clock signal, asserting a down signal when the phase of the feedback clock signal leads that of the reference clock signal. A digital filtering block compares a number of assertions of the up signal during the period of the reference clock signal to those of the down signal, and asserts an up or down command signal based thereupon. A biasing voltage generation circuit receives the up and down command signals and generates the biasing voltages therefrom.

Memory device and compensation method therein

A circuit is disclosed that includes an inverter unit and a switch unit. The inverter unit is coupled to a memory cell column. The inverter unit is configured to invert, in response to a first control signal and a second control signal, a first signal and to output a second signal for the enabling or disabling of a bit line keeper circuit that is configured to maintain a bit line to a voltage. The first signal is generated by the memory cell column. The switch unit is configured to couple a reference voltage to an input of the inverter unit, in response to a third control signal. The inverter unit is further configured to be deactivated in response to the reference voltage, the first control signal, and the second control signal.

DEVICE FOR TEMPERATURE DETECTION

The embodiments of the present disclosure relate to a device for temperature detection, including a delay unit including an odd number of inverters coupled end to end, a switching transistor having a control electrode coupled to an output end of the delay unit, a first electrode coupled to an operating voltage node of the device, and a second electrode coupled to an input end of the delay unit, a first capacitor having a first end coupled to the input end of the delay unit, and a second end coupled to the first electrode of the switching transistor or a ground node of the device, and a temperature sensitive transistor having a control electrode coupled to a bias voltage end of the device, a first electrode coupled to the input end of the delay unit, and a second electrode coupled to the ground node of the device.

Semiconductor device having ring oscillator and method of arranging ring oscillator
10482980 · 2019-11-19 · ·

A ring oscillator includes first to fourth current-controlled delay circuits configured to allow a delay time to be changed depending on a magnitude of sink current, wherein the first to fourth current-controlled delay circuits are arranged symmetrically to each other about a square.

COHERENT SAMPLING TRUE RANDOM NUMBER GENERATION IN FD-SOI TECHNOLOGY

The present description concerns a random number generation circuit (2) of correlated sampling ring oscillator type comprising: two identical ring oscillators (RO1, R02) implemented in CMOS-on-FDSOI technology; a circuit (104) sampling and storing an output (O1) of one of the two oscillators (RO1) at a frequency of the other one of the two oscillators (R02) and delivering a corresponding binary signal (Beat); and a circuit (200) controlling back gates of PMOS and NMOS transistors of at least one delay element of at least one of the two oscillators (RO1, R02) based on a period difference between the two oscillators (RO1, R02).

VOLTAGE-BASED AUTO-CORRECTION OF SWITCHING TIME
20190326815 · 2019-10-24 ·

A method for controlling a load-current zero-crossing of a switching regulator having a high-side switch and a low-side switch includes detecting, by a spike detection circuit, a presence of a spike on an output voltage of the switching regulator, determining, by the spike detection circuit, in the event that a spike is present, whether the spike is a positive spike or a negative spike, and adjusting a turn-off timing of the low-side switch based on a determination result.

ANALOG DELAY BASED T-SPACED N-TAP FEED-FORWARD EQUALIZER FOR WIRELINE AND OPTICAL TRANSMITTERS
20190326894 · 2019-10-24 ·

An analog-based architecture is used to produce tap spacings in an n-tap UI-spaced equalizer without the need for digital clock-driven elements. The analog voltage-controlled delay cell circuits control the amount of applied delay based on the measured phase difference between quarter-rate clock signals. Because low speed clock signals are sufficient for comparison purposes, the analog delay cells can be placed before the quarter-rate multiplexors in the data path. The use of analog-based delay cells eliminates the need to route high-speed clock signals to multiple digital delay elements that are typically used to achieve UI-spaced data signals in n-tap FIR equalizers. Timing margin issues can also be eliminated since digital clocked elements are not used to produce the UI spaced delays. The analog-based delay approach also consumes less power relative equalizers that use multiple digital delay elements requiring high speed clock signals.

SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE INCLUDING A DELAY CIRCUIT
20190326893 · 2019-10-24 · ·

A semiconductor integrated circuit device may include first and second delay circuits and a control circuit block connected between the first and second delay circuits. The first and second delay circuits may each include a plurality of delay elements serially connected with each other. The control circuit block may receive an output signal of the first delay circuit. The control circuit block may input an inversion signal, which may be generated by inverting the output signal of the first delay circuit, into the second delay circuit in response to a compensation signal.

MEMORY DEVICE AND COMPENSATION METHOD THEREIN

A circuit is disclosed that includes an inverter unit and a switch unit. The inverter unit is coupled to a memory cell column. The inverter unit is configured to invert, in response to a first control signal and a second control signal, a first signal and to output a second signal for the enabling or disabling of a bit line keeper circuit that is configured to maintain a bit line to a voltage. The first signal is generated by the memory cell column. The switch unit is configured to couple a reference voltage to an input of the inverter unit, in response to a third control signal. The inverter unit is further configured to be deactivated in response to the reference voltage, the first control signal, and the second control signal.