Methods and apparatuses are provided for temperature independent resistive-capacitive delay circuits of a semiconductor device. For example, delays associated with ZQ calibration or timing of the RAS chain may be implemented that to include circuitry that exhibits both proportional to absolute temperature (PTAT) characteristics and complementary to absolute temperature (CTAT) characteristics in order to control delay times across a range of operating temperatures. The RC delay circuits may include a first type of circuitry having impedance with PTAT characteristics that is coupled to an output node in parallel with a second type of circuitry having impedance with CTAT characteristics. The first type of circuitry may include a resistor and the second type of circuitry may include a transistor, in some embodiments.

Methods and apparatuses are provided for temperature independent resistive-capacitive delay circuits of a semiconductor device. For example, delays associated with ZQ calibration or timing of the RAS chain may be implemented that to include circuitry that exhibits both proportional to absolute temperature (PTAT) characteristics and complementary to absolute temperature (CTAT) characteristics in order to control delay times across a range of operating temperatures. The RC delay circuits may include a first type of circuitry having impedance with PTAT characteristics that is coupled to an output node in parallel with a second type of circuitry having impedance with CTAT characteristics. The first type of circuitry may include a resistor and the second type of circuitry may include a transistor, in some embodiments.

A delay element including a first set of field effect transistors (FETs) with gates configured to receive a first control voltage; a second set of FETs coupled in series with the first set of FETs between a first voltage rail and a first node, respectively, the second set of FETs include gates configured to receive a set of complementary select signals, respectively; a third set of FETs including gates configured to receive a set of non-complementary select signals, respectively; a fourth set of FETs coupled in series with the third set of FETs between a second node and a second voltage rail, respectively, the fourth set of FETs including gates configured to receive a second control voltage; and an inverter coupled between the first node and the second node, the inverter including an input configured to receive an input signal and an output configured to produce an output signal.

A delay element including a first set of field effect transistors (FETs) with gates configured to receive a first control voltage; a second set of FETs coupled in series with the first set of FETs between a first voltage rail and a first node, respectively, the second set of FETs include gates configured to receive a set of complementary select signals, respectively; a third set of FETs including gates configured to receive a set of non-complementary select signals, respectively; a fourth set of FETs coupled in series with the third set of FETs between a second node and a second voltage rail, respectively, the fourth set of FETs including gates configured to receive a second control voltage; and an inverter coupled between the first node and the second node, the inverter including an input configured to receive an input signal and an output configured to produce an output signal.

A line driver for signal equalization is described. The line driver may comprise an equalization driver and a gating circuit. The gating circuit may be configured to gate the equalization driver between a first transition and a second transition, such as between a rising edge and a falling edge. The gating circuit may comprise one or more delay elements, such as one or more inverters, configured to generate the second transition in response to receiving the first transition, where the second transition is delayed with respect to the first transition. Such line driver may be used to signals having high data rates to transmission lines, such as cables or metal connection on printed circuit boards.

A line driver for signal equalization is described. The line driver may comprise an equalization driver and a gating circuit. The gating circuit may be configured to gate the equalization driver between a first transition and a second transition, such as between a rising edge and a falling edge. The gating circuit may comprise one or more delay elements, such as one or more inverters, configured to generate the second transition in response to receiving the first transition, where the second transition is delayed with respect to the first transition. Such line driver may be used to signals having high data rates to transmission lines, such as cables or metal connection on printed circuit boards.

A CMOS all-digital pulse-mixing device includes a plurality of homogeneous logic elements serially connected to form a basic element sequence, an odd-positioned element parallel connection set and an even-positioned element parallel connection set. The basic element sequence includes odd combination positions and even combination positions. The odd-positioned element parallel connection set serially connects with one of the odd combination positions and the even-positioned element parallel connection set serially connects with one of the even combination positions. The odd-positioned element parallel connection set and the even-positioned element parallel connection set are provided to stretch or shrink a pulse mixture, which is distinguished from a conventional full-customized pulse-mixing device.

A CMOS all-digital pulse-mixing device includes a plurality of homogeneous logic elements serially connected to form a basic element sequence, an odd-positioned element parallel connection set and an even-positioned element parallel connection set. The basic element sequence includes odd combination positions and even combination positions. The odd-positioned element parallel connection set serially connects with one of the odd combination positions and the even-positioned element parallel connection set serially connects with one of the even combination positions. The odd-positioned element parallel connection set and the even-positioned element parallel connection set are provided to stretch or shrink a pulse mixture, which is distinguished from a conventional full-customized pulse-mixing device.

The semiconductor device includes a first inverter and a second inverter which is connected thereto in series. Each of the first and the second inverters includes a p-channel transistor and an n-channel transistor, respectively. The number of projection semiconductor layers each as the active region of the p-channel and the transistors of the second inserter is smaller than the number of the projection semiconductor layers each as the active region of the p-channel and the n-channel transistors of the first inverter.

Methods and apparatuses are provided for temperature independent resistive-capacitive delay circuits of a semiconductor device. For example, delays associated with ZQ calibration or timing of the RAS chain may be implemented that to include circuitry that exhibits both proportional to absolute temperature (PTAT) characteristics and complementary to absolute temperature (CTAT) characteristics in order to control delay times across a range of operating temperatures. The RC delay circuits may include a first type of circuitry having impedance with PTAT characteristics that is coupled to an output node in parallel with a second type of circuitry having impedance with CTAT characteristics. The first type of circuitry may include a resistor and the second type of circuitry may include a transistor, in some embodiments.