A multi-sense circuit includes a transistor circuit having sense nodes and a gate node, a peak detector having inputs coupled to the sense nodes of the transistor circuit and an output, and a control circuit having a gate control node coupled to the gate node of the transistor circuit and an overcurrent protection node coupled to the output of the peak detector.

Methods and systems for operating a double-base bidirectional power bipolar transistor. Two timing phases are used to transition into turn-off: one where each base is shorted to its nearest emitter/collector region, and a second one where negative drive is applied to the emitter-side base to reduce the minority carrier population in the bulk substrate. A diode prevents reverse turn-on while negative base drive is being applied.

Methods and systems for operating a double-base bidirectional power bipolar transistor. Two timing phases are used to transition into turn-off: one where each base is shorted to its nearest emitter/collector region, and a second one where negative drive is applied to the emitter-side base to reduce the minority carrier population in the bulk substrate. A diode prevents reverse turn-on while negative base drive is being applied.

Devices and methods related to switches are discussed. An inverse current condition may be detected, and a voltage at a node associated with a switch driver may be driven to a predetermined voltage in case of detection of an inverse current condition.

A semiconductor device may include a electrostatic discharge (ESD) protection circuit and a high voltage ESD triggering circuit that is configured to trigger ESD protection for high voltage circuits of the semiconductor device. The high voltage ESD triggering circuit may be implemented by one or more of the example implementations of high voltage ESD triggering circuits described herein. The example implementations of high voltage ESD triggering circuits described herein are capable of handle high voltages of the high voltage circuits included in the semiconductor device. This reduces the likelihood of and/or prevents premature triggering of ESD protection during normal operation for these high voltage circuits, and enables the high voltage circuits to be protected from high voltage ESD events.

A system may include a switch, a gate driver, and a signal conditioner. The switch may couple to a load. The gate driver may generate one or more gating signals to control one or more operations of the switch. The signal conditioner may receive an input signal associated with the switch and generate a modification signal that may modify the one or more gating signals based on the input signal. The modified gating signal may be used to reduce an amplitude of a voltage transient received by the switch to below a voltage threshold.

A system may include a switch, a gate driver, and a signal conditioner. The switch may couple to a load. The gate driver may generate one or more gating signals to control one or more operations of the switch. The signal conditioner may receive an input signal associated with the switch and generate a modification signal that may modify the one or more gating signals based on the input signal. The modified gating signal may be used to reduce an amplitude of a voltage transient received by the switch to below a voltage threshold.

Methods and systems for operating a double-base bidirectional power bipolar transistor. Two timing phases are used to transition into turn-off: one where each base is shorted to its nearest emitter/collector region, and a second one where negative drive is applied to the emitter-side base to reduce the minority carrier population in the bulk substrate. A diode prevents reverse turn-on while negative base drive is being applied.

Methods and systems for operating a double-base bidirectional power bipolar transistor. Two timing phases are used to transition into turn-off: one where each base is shorted to its nearest emitter/collector region, and a second one where negative drive is applied to the emitter-side base to reduce the minority carrier population in the bulk substrate. A diode prevents reverse turn-on while negative base drive is being applied.