An object of the present invention is to provide a semiconductor device capable of suppressing loss in a switching element at high temperature without increasing radiation noise of the switching element. A semiconductor device includes an IGBT including a gate to which a gate signal is input, a temperature detection element that detects temperature of the IGBT, and a capacitance adjustment unit that is arranged between the gate of the IGBT and a reference potential terminal and that adjusts a capacitance between the gate and an emitter of the IGBT according to a detection temperature detected by the temperature detection element.

A conversion circuit includes a main device, a voltage control switching circuit and a trigger circuit. The trigger circuit includes an output terminal and a sense terminal. The sense terminal is electrically connected to the control terminal of the main device. The voltage control switching circuit includes a first terminal, a second terminal and a control terminal. A first terminal is configured to receive an original signal. A second terminal is connected to a control terminal of the main device, and is configured to transmit a driving signal to drive the main device. A control terminal is connected to the main device and the output terminal. The driving signal has a first voltage level generated by the voltage control switching circuit in response to a voltage level at the control terminal of the voltage control switching circuit.

A switch having a drain, a source, and a control. The switch comprising a depletion-mode transistor including a first, a second, and a control terminal and an enhancement-mode transistor including a first, a second, and a control terminal. The first terminal of the depletion-mode transistor is the drain of the switch and the control of the depletion-mode transistor is coupled to the source of the switch. The control of the enhancement-mode transistor is coupled to the control of the switch, the second terminal of the enhancement-mode transistor is the source of the switch. The switch comprises a clamp circuit to clamp a voltage of the first terminal of the enhancement-mode transistor to a threshold, the clamp circuit comprises a resistor and a pn-junction device coupled between the first and second terminals of the enhancement-mode transistor and between the second terminal and the control of the depletion-mode transistor.

Disclosed is a signal transmission circuit, comprising: a common interface, a first switch, a second switch, and an interference-resistant branch; the common interface is configured to, receive a digital signal through the first switch when the first switch is closed, or to receive an analog signal through the second switch when the second switch is closed; the interference-resistant branch is configured to eliminate an interference of the second switch on the digital signal; a signal input of the interference-resistant branch is configured to receive the digital signal, and a signal output of the interference-resistant branch is connected to a signal input of the first switch; and/or, the signal input of the interference-resistant branch is connected to a signal output of the second switch, and the signal output of the interference-resistant branch is connected to a signal input of the common interface.

An isolation disconnect assembly for an insulated gate bipolar transistor assembly is provided. The isolation disconnect assembly includes a conductor assembly and a clinch joint magnetic actuator.

An intelligent power module and a controller for an air conditioner are provided. For the intelligent power module, an adjust circuit is additionally provided between a respective drive circuit and a respective IGBT transistor. The adjust circuit detects a change in the voltage of a low voltage power supply of the intelligent power module in real time, and disables the output of the module when the voltage is detected to be too low due to fluctuation of the low voltage power supply. This operation releases the charge accumulated in the IGBT transistor, when energy storage of a drive motor causes charge accumulation of the IGBT transistor. The adjust circuit can continue releasing the charge when the low voltage power supply is restored to normal, to prevent the operating reliability of the module from being affected by the impact of the charge on internal circuits of the module.

A controller circuit for controlling an insulated-gate bipolar transistor (IGBT) is configured to, in response to an IGBT turn off switching event, switch out a first switching element to prevent a pull-up signal from flowing to a gate of the IGBT, switch in a second switching element to create a channel to permit a first pull-down signal to flow to the gate of the IGBT, and switch in a third switching element to create a channel to permit a second pull-down signal to flow to the gate of the IGBT. In response to determining a collector to emitter voltage at the IGBT does not satisfy a threshold, the controller circuit is configured to switch out the third switching element to prevent the second pull-down signal from flowing to the gate of the IGBT.

A drive circuit Dr for a switch that reduces a surge voltage caused when a switch SW is switched to an off state. The drive circuit Dr detects, as an on voltage Von, a collector-emitter voltage of the switch SW while the switch SW is in an on state. When the detected on voltage Von is large, the drive circuit Dr sets a resistance value Rd of a discharging resistor 53 when the switch SW is switched to an off state to be larger than the resistance value Rd when the detected on voltage Von is small. More specifically, the drive circuit Dr sets the resistance value Rd to a larger value as the detected on voltage Von is increased.

Techniques for determining a temperature measurement of a junction of a power switch are described. A current can be applied to a control node, e.g., gate terminal, of the power switch, such as a field-effect transistor (FET) or an insulated-gate bipolar transistor (IGBT), while the power switch is in a steady-state region in which a gate-to-source voltage (e.g., FET) or a gate-to-emitter voltage (e.g., IGBT) of the power switch is constant. While in the steady-state region, the temperature measurements can be performed, thereby ensuring accuracy of the measurement.

A system, a switch assembly and an associated method. The system includes a number of switch assemblies, each including a switch module, isolation circuits, a detection unit, and a drive unit. The switch module includes power switch devices connected in parallel. The switch modules are connected in series. The isolation circuits each are connected in series to a gate terminal of at least one corresponding power switch device of the power switch devices. Each isolation circuit includes a capacitor or a controllable switch. The detection unit detects faults in at least one of the power switch devices. The drive unit is coupled to the switch module via the isolation circuits for driving the power switch devices of the corresponding switch module, and when the fault is detected, the drive unit is for turning on the power switch devices parallel connected to the at least one of faulty power switch devices.