In general, according to one embodiment, a semiconductor device includes a first terminal, a second terminal and a first circuit. The first circuit includes a first switching element, a second switching element and a first resistor. The gate of the first switching element is coupled between the first node and the second terminal. The first resistor and the second switching element are coupled in series between the first node and the second terminal. The first circuit is configured to change the first switching element and the second switching element from an off state to an on state when supply of the first voltage to the first node is stopped.

The invention relates to the field of power semiconductor devices. This invention discloses a drive circuit and device of a power switch. The input terminal of the drive circuit receives a pulse signal; the output terminal of the drive circuit is connected to a capacitor circuit. The capacitor circuit is used to provide a negative voltage for a first electrode of the power switch to turn off the power switch when the pulse signal is a turn-off signal; the drive circuit includes a capacitance adjustment unit. The capacitance adjustment unit includes a negative voltage adjustment element that can charge a capacitor whose voltage is lower than a predetermined voltage when the pulse signal is the turn-off signal.

The present disclosure provides a semiconductor chip including a functional area, a first end, a second end, a third end, and a connecting portion. The functional area has first and second sides opposite to each other. The first end is disposed on the first side and the third end is disposed on the first side, wherein the semiconductor chip is switched on or off according to the drive signal received between the third end and the first end, and the connecting portion is disposed on the first side of the functional area and connected to the first end and the third end, wherein when the temperature rises above the a first temperature, the connecting portion is in a conductive state, and when the temperature drops to be not higher than a third temperature, the connecting portion is in an insulated state.

The present disclosure provides a semiconductor chip including a functional area, a first end, a second end, a third end, and a connecting portion. The functional area has first and second sides opposite to each other. The first end is disposed on the first side and the third end is disposed on the first side, wherein the semiconductor chip is switched on or off according to the drive signal received between the third end and the first end, and the connecting portion is disposed on the first side of the functional area and connected to the first end and the third end, wherein when the temperature rises above the a first temperature, the connecting portion is in a conductive state, and when the temperature drops to be not higher than a third temperature, the connecting portion is in an insulated state.

A solid-state relay circuit includes an isolator circuit, a first output terminal, a second output terminal, and an output switch. The output switch is coupled to the isolator circuit, and includes a first transistor, a second transistor, and a diode. The first transistor is coupled to the first output terminal. The second transistor is coupled to the first transistor and the second output terminal. The diode is coupled to the first transistor, the second transistor, and ground, and is configured to block current flow from ground to the first transistor and the second transistor. The isolator circuit is coupled to the output switch and is configured to activate the first transistor and the second transistor.

A test circuit for testing a switching device. The test circuit includes: a first terminal for receiving a drive signal; second, third and fourth terminals respectively coupled to a ground electrode, a control electrode and a power-supply electrode, of the switching device; and a clamping circuit coupled between the second terminal and the fourth terminal. The clamping circuit is configured to, upon turning on of the switching device responsive to the drive signal, cause a voltage at the third terminal to be a first voltage higher than a threshold of the switching device, and, upon turning off of the switching device responsive to the drive signal, cause the voltage at the third terminal to be a third voltage between the threshold and the first voltage, while clamping a voltage at the fourth terminal to a second voltage lower than a withstand voltage of the switching device.

A semiconductor device includes a semiconductor body having first and second opposing surfaces in a vertical direction, and transistor cells at least partly integrated in the semiconductor body. Each transistor cell includes first and second source regions, first and second body regions, a drift region separated from the respective source region by the corresponding body region, a first gate electrode, and a control electrode. The drift region is arranged between the first and the second body region in a horizontal direction that is perpendicular to the vertical direction and extends from the first surface into the semiconductor body in the vertical direction. The first gate electrode is configured to provide a control signal for switching the transistor cell. The control electrode is configured to provide a control signal for controlling a JFET formed by the first body region, the drift region, and the second body region.

A power switch device driver with energy recovery is discussed. The power switch device adopts four switches and one inductor with appropriate control to insure the switching speed and save the power loss.

A power switch device driver with energy recovery is discussed. The power switch device adopts four switches and one inductor with appropriate control to insure the switching speed and save the power loss.

A current limit protecting system and method of a motor pre-driver are provided. A current limiting circuit detects a current of a resistor that is connected to a motor, and then compares the current of the resistor with a current threshold to output a current comparing signal. When a controller circuit determines that the current of the resistor is larger than the current threshold according to the current comparing signal, and a working period of a first signal of a first node or a working period of a second signal of a second node of the motor reaches a preset value, a first high-side switch and a second high-side switch are turned off, and a first low-side switch and a second low-side switch are alternately turned on. As a result, a temperature of the motor generally reduces.