A device includes a first switch and a first diode connected in parallel between a midpoint and a first terminal of the hybrid power device, a second switch and a second diode connected in parallel between the midpoint and a second terminal of the hybrid power device, a third switch coupled between the first terminal and the second terminal, and a third diode connected between the first terminal and the second terminal.

A power module includes: a GaN transistor, an NMOS transistor, a first capacitor, a first diode and a second diode. The NMOS transistor is electrically connected to the GaN transistor. A negative electrode of the first capacitor is electrically connected to an anode of the first diode and a gate of the GaN transistor. A cathode of the second diode is electrically connected to a gate of the NMOS transistor. The power module further includes a power module control terminal electrically connected to an anode of the first capacitor and an anode of the second diode.

A circuit to rectify an alternating current (AC) signal produced by an output coil of a transformer responsive to an input current in an input coil of the transformer comprises: an output node and a return node coupled to an output load; a first rectifier, coupled to a first terminal of the output coil and the return node, to rectify the AC signal to supply a current to the output node when the input current is ON; a second rectifier, coupled to a second terminal of the output coil and the return node, to rectify the AC signal to supply a current to the output node when the input current is OFF; and a voltage clamp to clamp a first voltage transient and a second voltage transient of the AC signal that occur at the first terminal and the second terminal when the input current is switched OFF and ON.

An overcurrent protection circuit and display drive device, comprising: when input current of a front end corresponding to a logic signal experiences overcurrent, preventing the input current of the front end experiencing overcurrent from being transmitted to a drive chip, thereby preventing damage to the drive chip.

Various embodiments include a switching device for disconnecting a current path in a DC supply system, said current path comprising inductances at the source end and the load end, the switching device comprising: two series-connected switching modules; wherein each of the series-connected switching modules comprises a controllable semiconductor switching element and a series circuit; the series circuit including a resistor and a capacitor connected in parallel to the controllable semiconductor switching element.

Various embodiments include a switching device for disconnecting a current path in a DC supply system, said current path comprising inductances at the source end and the load end, the switching device comprising: two series-connected switching modules; wherein each of the series-connected switching modules comprises a controllable semiconductor switching element and a series circuit; the series circuit including a resistor and a capacitor connected in parallel to the controllable semiconductor switching element.

A fault detector for an anti-parallel thyristor includes: a power supply unit configured to supply power to the first and second thyristors; a first current sensor configured to output a first current measurement value that flows through the first thyristor; a second current sensor configured to output a second current measurement value that flows through the second thyristor; and a detector which notifies a fault of a thyristor when the first and second current measurement values satisfy a set fault condition,

A DC-DC voltage converter including a main switch formed by a normally ON switch element connected in series with a normally OFF switch element including a control circuit, a load in series with the main switch, the main switch and the load being configured to be connected to terminals of a DC voltage source. A voltage source, that can be used for controlling is obtained by connecting a main peak detector circuit to the mid-point of the main switch. The control circuit of the normally OFF switch element can be supplied with the DC voltage that makes the entire device self-supplied. Such a converter can, for example, find application in aeronautics.

A circuit arrangement includes a plurality of switch assemblies connected in series, each provided with a parallel circuit of three assembly components, in which a first assembly component is a semiconductor switch, a second assembly component is a freewheeling diode, and a third assembly component is a surge arrester. The assembly components are disposed one above the other or next to one another as an assembly component stack, the three assembly components of each switch assembly are disposed in the assembly component stack in a consecutive manner. Each two adjacent assembly components are electrically connected to one another by a direct connection. A power converter module and a method for operating a power converter module are also provided.

A semiconductor switching string includes a plurality of series-connected semiconductor switching assemblies, each having a main semiconductor switching element that includes first and second connection terminals. The main semiconductor switching element also has an auxiliary semiconductor switching element electrically connected between the first and second connection terminals. Each semiconductor switching assembly also includes a control unit configured to switch on a respective auxiliary semiconductor switching element to selectively create an alternative current path between the first and second connection terminals whereby current is diverted to flow through the alternative current path to reduce the voltage across the corresponding main semiconductor switching element. The or each control unit is further configured to switch on the auxiliary semiconductor switching element when the voltage across the corresponding main semiconductor switching element differs from a voltage reference derived from the voltage across all of the main semiconductor switching elements.