H03K17/0822

Driver circuit and semiconductor device
11502676 · 2022-11-15 · ·

Provided is a driver circuit that controls an output unit that switches whether or not to supply a current to an output line, in accordance with a potential difference between a first control signal to be input and a voltage of the output line. The driver circuit comprises a control line that transmits the first control signal to the output unit; a low potential line to which a predetermined reference potential is applied; a first connection switching unit that switches whether or not to connect the control line and the low potential line, in accordance with a second control signal; and a cutoff unit that is provided in series with the first connection switching unit between the control line and the low potential line and cuts off the control line and the low potential line based on a potential of the low potential line.

Driver safe operating area protection with current and temperature compensated trigger circuit

A driver circuit includes a high side transistor, a low side transistor, a first trigger circuit, and a second trigger circuit. The high side transistor has a first control terminal and a first current path coupled between a first voltage terminal and an output voltage terminal. The low side transistor has a second control terminal and a second current path coupled between the output voltage terminal and ground. The first trigger circuit is coupled to the first control terminal, the first voltage terminal, and the output voltage terminal. The first trigger circuit is operable to protect the high side transistor. The second trigger circuit is coupled to the second control terminal, the first trigger circuit, and ground. The second trigger circuit is operable to protect the low side transistor.

SHORT CIRCUIT PROTECTION
20220360068 · 2022-11-10 ·

In some examples, this description provides for an apparatus. The apparatus includes a power switch having a power switch source configured to receive an input voltage, a power switch drain, and a power switch gate. The apparatus also includes a current sense component coupled to the power switch. The apparatus also includes a current limiting circuit coupled to the power switch gate, the power switch drain, and the current sense component. The apparatus also includes an over-current protection (OCP) circuit coupled to the power switch source, the power switch drain, and the power switch gate. The apparatus also includes an output voltage (VOUT) clamp coupled to the power switch drain and the power switch gate.

LEAKAGE CURRENT DETECTION CIRCUIT FOR SEMICONDUCTOR
20220357410 · 2022-11-10 ·

A circuit for detecting a leakage current in a semiconductor element includes a setting circuit and a detector. The semiconductor element includes a first terminal at a high-potential-side of the semiconductor element, a second terminal at a low-potential-side of the semiconductor element, and a control terminal. The control terminal receives a signal for controlling a conduction state between the first terminal and the second terminal. The setting circuit sets a duration during which a charging current flows to the control terminal as an undetectable duration, in response to turning on the semiconductor element. The detector outputs a detected signal based on a condition that the leakage current flowing from the control terminal to the second terminal, after the undetectable duration has been elapsed.

Switch circuit capable of overcurrent protection with small and simple circuit, and with simple operation, without affecting normal operation

A driver circuit controls a first switch element. A first resistor is connected between the driver circuit and the first switch element. A second switch element is connected to the first switch element. An overcurrent detector circuit controls the second switch element based on an overcurrent current flowing through the first switch element. A second resistor is connected between the overcurrent detector circuit and the second switch element. The first and second resistor is set such that a turn-off time of the first switch element when the second switch element is turned on by the overcurrent detector circuit is longer than a turn-off time of the first switch element when the first switch element is turned off by the driver circuit.

Methods and apparatus to dynamically limit current

Methods, apparatus, systems and articles of manufacture are disclosed to allow dynamic changing between current limiting methods. A power delivery controller comprising: a power control device; a first current control device, the first current control device to control the power control device when a current level associated with a current flowing between a first device and a second device exceeds a first adjustable current threshold value; a second current control device to control the power control device when the current level exceeds a second adjustable current threshold value; and a configuration manager to, during runtime, set a first configuration setting of the first current control device and a second configuration setting of the second current control device, the first configuration setting and second configuration setting based on a negotiated contract corresponding to the first device and the second device.

Clamp for power transistor device

A system includes a clamp network coupled between an input and an output and configured to clamp a voltage between the input and the output to a first clamp voltage based on the presence of a trigger signal and to a second clamp voltage based on the absence of the trigger signal. The second clamp voltage is greater than the first clamp voltage and the first clamp voltage is less than a breakdown voltage of the power transistor device. A detector circuit is coupled to the input and the output. A power transistor device may also be coupled between the input and the output. The detector circuit is configured to detect a pulse signal at the input or the output while the power transistor device is off and to generate the trigger signal for a time interval based on detecting the pulse signal.

Power transistor detection with self-protection

A method for establishing a powered link over a transmission line includes providing a constant, predetermined current to a terminal thereby causing a power transistor coupled to the terminal to conduct in a subthreshold region of transistor operation without current flowing between a drain terminal of the power transistor and a source terminal of the power transistor. The method includes estimating a size of the power transistor using a digital time signal indicative of an amount of time the constant, predetermined current is provided before a voltage level on the terminal exceeds a predetermined voltage level. In an embodiment, the predetermined voltage level is less than a threshold voltage of the power transistor.

Motor protecting circuit
11575257 · 2023-02-07 · ·

A motor protecting circuit is provided. A first terminal of each of high-side transistors is coupled to a power supply voltage. A second terminal of each of low-side transistors is grounded. Second terminals of the high-side transistors are respectively connected to first terminals of the low-side transistors. An overvoltage detector circuit is coupled to the power supply voltage of an output circuit. When the overvoltage detector circuit determines that the power supply voltage of the output circuit is higher than a voltage threshold, the overvoltage detector circuit outputs an overvoltage detected signal to a controller circuit. According to the overvoltage detected signal, the controller circuit controls a driver circuit to turn on at least one of the high-side transistors and at least one of the low-side transistors at the same time.

SEMICONDUCTOR DEVICE AND CONTROL SYSTEM

Detection transistor MNd flows a detection current IdN to a current path CP1n when an output voltage Vo generated in a load terminal PN1 is than a ground voltage GND. A current mirror circuit CMp1 transfers the detection current IdN flowing in the current path CP1n to a current path CP2a. Detecting resistor element Rd1 converts a mirror current I2a flowing in the current path CP2a to a detection voltage Vd1. A control transistor MNc1 is turned on when the converted detection voltage Vd1 is higher than a predetermined value. Then, the output transistor QO is controlled to be off while the control transistor MNc1 is on.