Provided is a switching apparatus, including: a first semiconductor switching device of IGBT, and a second semiconductor switching device of a different type from IGBT, which are electrically connected in parallel; and a control unit configured to turn on the second semiconductor switching device before the first semiconductor switching device, wherein a maximum rated current of the second semiconductor switching device is greater than a maximum rated current of the first semiconductor switching device.

Provided is a switching apparatus, including: a first semiconductor switching device of IGBT, and a second semiconductor switching device of a different type from IGBT, which are electrically connected in parallel; and a control unit configured to turn on the second semiconductor switching device before the first semiconductor switching device, wherein a maximum rated current of the second semiconductor switching device is greater than a maximum rated current of the first semiconductor switching device.

A method includes pre-charging a parasitic capacitance of a control node that is coupled to a control terminal of first and second transistors that have respective current paths that form a switched current path coupled between a load node and a storage node. Pre-charging the parasitic capacitance includes: making conductive a first auxiliary transistor that has a current path coupled between the storage node and the control node, or making conductive a second auxiliary transistor that has a current path coupled between the load node and the control node. The method further includes, after pre-charging the parasitic capacitance, making the switched current path conductive to couple the load node to the storage node.

The disclosure relates to a pulsed laser driver that utilizes a high-voltage switch transistor to support a high output voltage for a laser, and a low-voltage switch transistor that switches between an ON state and an OFF state to generate a pulsed current that is supplied to the laser to generate an output pulsed laser signal. The pulsed laser driver switches the low-voltage switch transistor between the ON state and the OFF state according to an input pulsed signal such that the output pulsed laser signal is modulated according to the input pulsed signal. The pulsed laser driver also utilizes a feedback control module to control the gate terminal voltage of the high-voltage switch transistor to improve the precision of the output pulsed laser signal.

Methods and devices to address antenna termination in absence of power supplies within an electronic circuit including a termination circuit and a switching circuit. The devices include regular NMOS devices that decouple the antenna from the switching circuit in absence of power supplies while the antenna is coupled to a terminating impedance having a desired impedance value through a native NMOS device. The antenna is coupled with the switching circuit via the regular NMOS device during powered conditions while the antenna is decoupled from the terminating impedance.

Methods and devices to address antenna termination in absence of power supplies within an electronic circuit including a termination circuit and a switching circuit. The devices include regular NMOS devices that decouple the antenna from the switching circuit in absence of power supplies while the antenna is coupled to a terminating impedance having a desired impedance value through a native NMOS device. The antenna is coupled with the switching circuit via the regular NMOS device during powered conditions while the antenna is decoupled from the terminating impedance.

A gate driver device includes a first field effect transistor and a first driver circuit. The first field effect transistor includes a first gate electrode and a first backgate structure. The first driver circuit supplies a first backgate drive signal to the first backgate structure.

An integrated circuit can comprise an output terminal, a power transistor having a first current electrode coupled to the output terminal and a second current electrode coupled to a power supply terminal, a driver having an output coupled to a control electrode of the power switch, a capacitor having a first terminal coupled to the output terminal and a second terminal coupled to a circuit node, a first low pass filter coupled between the circuit node and an input of the driver, the first low pass filter having a first cut off frequency, a set of current sources, and a second low pass filter coupled between the circuit node and an output of the set of current sources. The second low pass filter can have a second cut off frequency that is higher than the first cut off frequency.

A semiconductor circuit includes: a first inductor part configured to connect in series with a source electrode of a first semiconductor element; and a second inductor part configured to connect in series with a source electrode in a second semiconductor element that is configured to connect in parallel with the first semiconductor element; the first inductor part and the second inductor part are arranged to generate an induced electromotive force in the first inductor part and the second inductor part by way of a magnetic interaction so that the currents flowing in the first inductor part and the second inductor part are reinforced in the same direction.

A semiconductor device includes a junction field effect transistor (JFET) including a source electrode, a drain electrode, and a gate electrode, and a metal oxide semiconductor field effect transistor (MOSFET) including a source electrode, a drain electrode, and a gate electrode. The JFET and the MOSFET are cascode-connected such that the source electrode of the JFET and the drain electrode of the MOSFET are electrically connected. A gate voltage dependency of the JFET or a capacitance ratio of a mirror capacitance of the MOSFET to an input capacitance of the MOSFET is adjusted in a predetermined range.