Dual gate FD-SOI transistors are used as MOSFET capacitors to replace passive well capacitors in analog microcircuits. Use of the dual gate FD-SOI devices helps to reduce unstable oscillations and improve circuit performance. A thick buried oxide layer within the substrate of an FD-SOI transistor forms a capacitive dielectric that can sustain high operating voltages in the range of 1.2 V-3.3 V, above the transistor threshold voltage. A secondary gate in the FD-SOI transistor is used to create a channel from the back side so that even when the bias voltage on the first gate is small, the effective capacitance remains higher. The capacitance of the buried oxide layer is further utilized as a decoupling capacitor between supply and ground. In one example, a dual gate PMOS FD-SOI transistor is coupled to an operational amplifier and a high voltage output driver to produce a precision-controlled voltage reference generator. In another example, two dual gate PMOS and one dual gate NMOS FD-SOI transistor are coupled to a charge pump, a phase frequency detector, and a current-controlled oscillator to produce a high-performance phase locked loop circuit in which the decoupling capacitor footprint is smaller, in comparison to the conventional usage of passive well capacitance.

A signal conditioning circuit to reduce detrimental effects of analog circuit elements. The techniques described herein provide a cascade of buffer circuits and signal processing circuitry to measure and cancel the distortion introduced by the buffer circuits. Thus, a buffer can be added to the signal path of an input signal without the detrimental effects, such as added distortion, that typically accompany the addition of buffers.

A method can include, in response to a power supply voltage transition, setting a temperature window to a first temperature range by operation of a temperature circuit formed on a semiconductor device. In response to a temperature of the semiconductor device being determined to be outside of the first temperature range, changing the temperature range of the temperature window until the temperature of the semiconductor device is determined to be within the temperature window.

A method can include, in response to a power supply voltage transition, setting a temperature window to a first temperature range by operation of a temperature circuit formed on a semiconductor device. In response to a temperature of the semiconductor device being determined to be outside of the first temperature range, changing the temperature range of the temperature window until the temperature of the semiconductor device is determined to be within the temperature window.

A regeneration circuit includes a first inverting circuit and a second inverting circuit. The regeneration circuit also includes a first transistor coupled to an input of the second inverting circuit, and a second transistor coupled to an input of the first inverting circuit, a third transistor and a fourth transistor. A gate of the first transistor and a gate of the fourth transistor are coupled to a first input, and a gate of the second transistor and a gate of the fourth transistor are coupled to a second input. The regeneration circuit further includes a first switch and a second switch. The first switch and the third transistor are coupled in series between a first rail and the first transistor, and the second switch and the fourth transistor are coupled in series between the first rail and the second transistor.

A radio-frequency switch includes a series field-effect transistor, a shunt field-effect transistor having a gate node, and shunt arm control circuitry configured to receive an internal regulator voltage and provide the internal regulator voltage to the gate node of the shunt field-effect transistor when the radio-frequency switch is in a stand-by mode of operation.

A radio-frequency switch includes a series field-effect transistor, a shunt field-effect transistor having a gate node, and shunt arm control circuitry configured to receive an internal regulator voltage and provide the internal regulator voltage to the gate node of the shunt field-effect transistor when the radio-frequency switch is in a stand-by mode of operation.

In circuitry for measuring a voltage at a node, a capacitive divider is coupled to the node, wherein the capacitive divider provides a first output. A resistive divider is coupled to the node, wherein the resistive divider provides a second output.

In circuitry for measuring a voltage at a node, a capacitive divider is coupled to the node, wherein the capacitive divider provides a first output. A resistive divider is coupled to the node, wherein the resistive divider provides a second output.

A single-ended-to-differential converter for driving an LVDS (Low Voltage Differential Signaling) driving circuit includes a first converting circuit, a second converting circuit, and a controller. The first converting circuit converts an input signal into a first output signal. The first converting circuit has a tunable delay time. The second converting circuit converts the input signal into a second output signal. The second converting circuit has a fixed delay time. The controller generates a first control signal and a second control signal according to the first output signal and the second output signal, so as to adjust the tunable delay time of the first converting circuit.