Various examples are provided related to semiconductor topologies and devices that can be used for soft starting and active fault protection of power converters. In one example, an active switch device includes an active switch having a gating control input; and a thyristor having a gating control input. The thyristor is coupled in parallel with the active switch. The active switch can be an IGBT, MOSFET, or other appropriate device. In another example, a power converter can include the active switch devices and switching control circuitry coupled to gating control inputs of the active switch devices.

Disclosed is a low-voltage DC power distribution fast switching device. The device includes a positive output terminal electrically connected to a positive pole of a load, and no less than two switching circuits connected in parallel with each other; the switching circuit includes a positive input terminal electrically connected to a positive pole of common negative power supplies, a supplementary diode cluster composed of no less than one diode connected in series, and a thyristor connected between the positive input terminal and the positive output terminal; the positive input terminal is electrically connected to an anode of the supplementary diode cluster and an anode of the thyristor, and the positive output terminal is electrically connected to a cathode of the complementary diode cluster and a cathode of the thyristor.

Disclosed is a low-voltage DC power distribution fast switching device. The device includes a positive output terminal electrically connected to a positive pole of a load, and no less than two switching circuits connected in parallel with each other; the switching circuit includes a positive input terminal electrically connected to a positive pole of common negative power supplies, a supplementary diode cluster composed of no less than one diode connected in series, and a thyristor connected between the positive input terminal and the positive output terminal; the positive input terminal is electrically connected to an anode of the supplementary diode cluster and an anode of the thyristor, and the positive output terminal is electrically connected to a cathode of the complementary diode cluster and a cathode of the thyristor.

Disclosed herein is a hybrid resonant capacitor circuit including a first capacitor configured to discharge resonant current to interrupt a load current to a switch in parallel with the hybrid resonant capacitor circuit, a second capacitor coupled in parallel with the first capacitor, wherein the second capacitor is configured to transfer energy stored in the second capacitor to the first capacitor after discharge of the resonant current from the first capacitor, and a current limiter coupled in series with the second capacitor. A static transfer switch including a thyristor switch and the hybrid resonant capacitor circuit is also disclosed herein, as is a method for facilitating multiple consecutive voltage source transfers between a first voltage source and a second voltage source powering a load, using the hybrid resonant capacitor circuit.

Disclosed herein is a hybrid resonant capacitor circuit including a first capacitor configured to discharge resonant current to interrupt a load current to a switch in parallel with the hybrid resonant capacitor circuit, a second capacitor coupled in parallel with the first capacitor, wherein the second capacitor is configured to transfer energy stored in the second capacitor to the first capacitor after discharge of the resonant current from the first capacitor, and a current limiter coupled in series with the second capacitor. A static transfer switch including a thyristor switch and the hybrid resonant capacitor circuit is also disclosed herein, as is a method for facilitating multiple consecutive voltage source transfers between a first voltage source and a second voltage source powering a load, using the hybrid resonant capacitor circuit.

A power semiconductor circuit is provided for clamping the voltage across the circuit when a power semiconductor switch is opened (i.e., turned off). The circuit may include a first surge arrester and a first semiconductor switch coupled in parallel with the power semiconductor switch. The first semiconductor switch is coupled in series with the first surge arrester. A second surge arrester may be coupled to the gate of the first semiconductor switch to control current flow through the first semiconductor switch and the first surge arrester.

A power semiconductor circuit is provided for clamping the voltage across the circuit when a power semiconductor switch is opened (i.e., turned off). The circuit may include a first surge arrester and a first semiconductor switch coupled in parallel with the power semiconductor switch. The first semiconductor switch is coupled in series with the first surge arrester. A second surge arrester may be coupled to the gate of the first semiconductor switch to control current flow through the first semiconductor switch and the first surge arrester.

The present invention is directed toward an addressable ignition stage which produces an output sufficient to detonate a secondary explosive, generally. The present invention comprises addressability and ignition functions that may be used together or separately to incorporate a high-power resistor with a thermally conductive substrate allowing for operation at high temperatures for ignition. The ignition stage is amendable to high volume production, exhibits a high degree of reliability, robustness and operational dependability for use alone or configurable into existing technology.

The present invention is directed toward an addressable ignition stage which produces an output sufficient to detonate a secondary explosive, generally. The present invention comprises addressability and ignition functions that may be used together or separately to incorporate a high-power resistor with a thermally conductive substrate allowing for operation at high temperatures for ignition. The ignition stage is amendable to high volume production, exhibits a high degree of reliability, robustness and operational dependability for use alone or configurable into existing technology.

Techniques are described for implementing diodes with low threshold voltages and high breakdown voltages. Some embodiments further implement diode devices with programmable threshold voltages. For example, embodiments can couples a native device with one or more low-threshold, diode-connected devices. The coupling is such that the low-threshold device provides a low threshold voltage while being protected from breakdown by the native device, effectively manifesting as a high breakdown voltage. Some implementations include selectable branches by which the native device is programmably coupled with any of multiple low-threshold, diode-connected devices.