Patent classifications
H03K17/785
Signal measurement circuit and measurement method therefor
This application provides a signal measurement circuit and a measurement method therefor. The signal measurement circuit is separately connected to a scan line and a data line by using a shim, to measure waveform signals of the scan line and the data line.
Signal measurement circuit and measurement method therefor
This application provides a signal measurement circuit and a measurement method therefor. The signal measurement circuit is separately connected to a scan line and a data line by using a shim, to measure waveform signals of the scan line and the data line.
SEMICONDUCTOR RELAY MODULE AND SEMICONDUCTOR RELAY CIRCUIT
A semiconductor relay module includes first to third semiconductor relays, first to third input terminals, first to third output terminals, a first connection line, and a first monitor terminal connected to the first connection line. A first input circuit of the first semiconductor relay and a second input circuit of the second semiconductor relay are connected to the first and second input terminals. A third input circuit of the third semiconductor relay is connected to the first or second input terminal and the third input terminal. A first output circuit of the first semiconductor relay is connected to the first output terminal and the first connection line. A second output circuit of the second semiconductor relay is connected to the second output terminal and the first connection line. A third output circuit of the third semiconductor relay is connected to the third output terminal and the first connection line.
SEMICONDUCTOR RELAY MODULE AND SEMICONDUCTOR RELAY CIRCUIT
A semiconductor relay module includes first to third semiconductor relays, first to third input terminals, first to third output terminals, and a first connection line. A first input circuit of the first semiconductor relay and a second input circuit of the second semiconductor relay are connected to the first and second input terminals. The first and second input circuits are connected in series. A third input circuit of the third semiconductor relay is connected to the first or second input terminal and the third input terminal. A first output circuit of the first semiconductor relay is connected to the first output terminal and the first connection line. A second output circuit of the second semiconductor relay is connected to the second output terminal and the first connection line. A third output circuit of the third semiconductor relay is connected to the third output terminal and the first connection line.
High speed switching solid state relay circuit
A method for high speed switching comprises receiving voltage inputs at a bridge rectifier, receiving a logic input signal at an optical isolator and generating an output signal from the optical isolator based on the logic input signal, and driving a gate of a field effect transistor (FET) via the output signal of the optical isolator, wherein a source of the FET is connected to a negative output of the bridge rectifier and a drain of the FET is connected to a positive output of the bridge rectifier through a load. The method further includes limiting current flowing to the gate of the FET through first and second resistors and first and second diodes connecting the voltage inputs to the gate of the FET and limiting voltage to the gate of the FET below a maximum voltage rating of the FET by a Zener diode connected to the gate of the FET.
High speed switching solid state relay circuit
A method for high speed switching comprises receiving voltage inputs at a bridge rectifier, receiving a logic input signal at an optical isolator and generating an output signal from the optical isolator based on the logic input signal, and driving a gate of a field effect transistor (FET) via the output signal of the optical isolator, wherein a source of the FET is connected to a negative output of the bridge rectifier and a drain of the FET is connected to a positive output of the bridge rectifier through a load. The method further includes limiting current flowing to the gate of the FET through first and second resistors and first and second diodes connecting the voltage inputs to the gate of the FET and limiting voltage to the gate of the FET below a maximum voltage rating of the FET by a Zener diode connected to the gate of the FET.
Battery-operated electronic switching device having a power-free stand-by mode
Battery-powered electronic switching device comprising a powerless standby mode, including a sensor, a controller, a battery and a wireless communication module, wherein the controller can be activated via a switching transistor connected to the battery, wherein the switching transistor for activation can be set into a conductive state upon impinging light on a photoreceiver, wherein the control terminal of the switching transistor is connected to the controller so that it can remain permanently conductive, wherein the photoreceiver comprises a cover, which is suitable for influencing the incidence of light, and the controller comprises means for switching off the switching transistor in order to set the electronic switching device after a successful test, in response to a control command or after a predetermined period of time into the powerless standby mode.
Battery-operated electronic switching device having a power-free stand-by mode
Battery-powered electronic switching device comprising a powerless standby mode, including a sensor, a controller, a battery and a wireless communication module, wherein the controller can be activated via a switching transistor connected to the battery, wherein the switching transistor for activation can be set into a conductive state upon impinging light on a photoreceiver, wherein the control terminal of the switching transistor is connected to the controller so that it can remain permanently conductive, wherein the photoreceiver comprises a cover, which is suitable for influencing the incidence of light, and the controller comprises means for switching off the switching transistor in order to set the electronic switching device after a successful test, in response to a control command or after a predetermined period of time into the powerless standby mode.
SEMICONDUCTOR RELAY MODULE AND SEMICONDUCTOR RELAY CIRCUIT
A first input circuit is connected to a first input terminal and a second input terminal in a package. A second input circuit is connected to the first input terminal and the third input terminal in the package. A third input circuit is connected to the first or second input terminal and a third input terminal in the package. A first output circuit is connected to a first output terminal and a first connection line in the package. A second output circuit is connected to a second output terminal and the first connection line in the package. A third output circuit is connected to a third output terminal and the first connection line in the package.
Semiconductor relay module
In a semiconductor relay module, inside a package, one of a pair of input parts of a first semiconductor relay is connected to a first input terminal, the other of the pair of input parts of the first semiconductor relay is connected to a second input terminal, one of a pair of input parts of a second semiconductor relay is connected to the second input terminal, the other of the pair of input parts of the second semiconductor relay is connected to the first input terminal, one of a pair of input parts of a third semiconductor relay is connected to a third input terminal, and the other of the pair of input parts of the third semiconductor relay is connected to the first input terminal or the second input terminal.