The circuit breaker control module of the present disclosure comprises: a plurality of semiconductor switching units for blocking current flows of transmission distribution lines or performing switching operations so as to switch the current flow directions; a control unit for controlling the turn-on/turn-off operation of each semiconductor switching unit by transmitting a trip signal to each of the plurality of semiconductor switching units; and a plurality of insulation type signal transmission element units which are provided between the plurality of semiconductor switching units and the control unit such that the semiconductor switching units and the control unit are insulated, and which transmit the trip signal from the control unit to each of the plurality of semiconductor switching units, and thus the presently disclosed circuit breaker control module can reduce the risk of accidents due to an electrical arc and increase the stability and reliability of the control unit.

A latching relay includes a supply terminal, a load terminal, first and second coupling circuits, a latch circuit, first and second transistors, and a local supply node coupled to a capacitor. In one example, the supply terminal is coupled to a supply node and the load terminal is coupled to the load. The first and second transistors control the conductivity of a drive transistor coupled to the load. A microcontroller controls the latching relay to switch the load on and off. To enable the load, the microcontroller sinks current from the supply terminal and through the first coupling circuit. While the load is enabled, the capacitor is discharged. The latching relay is operable in a refresh mode in which current is pulsed through the first coupling circuit causing capacitor to be re-charged from the supply terminal. To disable the load, the microcontroller sinks current through the second coupling circuit.

A communication system, first and second device-side connectors and cable-side connectors are configured such that, when the first device-side and first cable-side connector are connected to each other, a communication line connection portion of the first device-side connector and the first cable-side connector are connected to each other, and when the second device-side and second cable-side connector are connected to each other, a communication line connection portion of the second device-side connector and second cable-side connector are connected to each other, and a valid/invalid switching circuit is configured to: in a case where the first and second cable-side connectors are connected to the first and second device-side connectors, respectively, render a connection of a termination resistor to a pair of conductors of an internal communication line invalid; and in other cases, render the connection of the termination resistor to the pair of conductors of the internal communication line valid.

A semiconductor relay includes: a light-emitting element; and a light-receiving element facing the light-emitting element. The light-receiving element includes: a substrate; a semiconductor layer having a direct transition type, the semiconductor layer being disposed on the substrate and having a semi-insulating property; a first electrode having at least a part in contact with the semiconductor layer; and a second electrode having at least a part in contact with either one of the semiconductor layer and the substrate, in a position separated from the first electrode. The semiconductor layer is reduced in resistance by absorbing light from the light-emitting element.

A semiconductor relay includes: a light-emitting element; and a light-receiving element facing the light-emitting element. The light-receiving element includes: a substrate; a semiconductor layer having a direct transition type, the semiconductor layer being disposed on the substrate and having a semi-insulating property; a first electrode having at least a part in contact with the semiconductor layer; and a second electrode having at least a part in contact with either one of the semiconductor layer and the substrate, in a position separated from the first electrode. The semiconductor layer is reduced in resistance by absorbing light from the light-emitting element.

A bidirectional switch for the control of power from an AC source to a load is described. The approach uses power MOSFETs in a bidirectional switch subcircuit configuration having an optically coupled, electrically floating control circuit that self-biases the switches into the on state and uses an optically coupled control element to force the switches into the off state. The time constant of the control circuit is fast enough to allow phase control as well as on-off control. A boost circuit is included to ensure that the control voltage exceeds a threshold voltage of the MOSFETs to force an off state. A plurality of subcircuits can be easily cascaded to provide improved performance.

A novel approach for the control of AC power uses power MOSFETs in a bidirectional switch subcircuit configuration having an optically coupled, electrically floating control circuit that self-biases the switches into the on state and uses an optically coupled control element to force the switches into the off state. The time constant of the control circuit is fast enough to allow phase control as well as on-off control. A plurality of subcircuits can be easily cascaded to provide improved performance.

A novel approach for the control of AC power uses power MOSFETs in a bidirectional switch subcircuit configuration having an optically coupled, electrically floating control circuit that self-biases the switches into the on state and uses an optically coupled control element to force the switches into the off state. The time constant of the control circuit is fast enough to allow phase control as well as on-off control. A plurality of subcircuits can be easily cascaded to provide improved performance.

A pulse generator has a galvanically isolated output, in particular for a consumption meter. A control output of a control unit of the pulse generator is coupled to an input of an opto-isolator of the pulse generator in order to output at the output of the opto-isolator an output current controlled by the control unit. The opto-isolator is connected to a field-effect transistor in such a way that the output current from the opto-isolator charges a capacitor via a rectifying component, which blocks the capacitor from discharging via the opto-isolator. The voltage drop across the capacitor is the gate voltage of the field-effect transistor. The field-effect transistor switches the output of the pulse generator directly or indirectly.

A pulse generator has a galvanically isolated output, in particular for a consumption meter. A control output of a control unit of the pulse generator is coupled to an input of an opto-isolator of the pulse generator in order to output at the output of the opto-isolator an output current controlled by the control unit. The opto-isolator is connected to a field-effect transistor in such a way that the output current from the opto-isolator charges a capacitor via a rectifying component, which blocks the capacitor from discharging via the opto-isolator. The voltage drop across the capacitor is the gate voltage of the field-effect transistor. The field-effect transistor switches the output of the pulse generator directly or indirectly.