A power management device is provided including a circuit module configured to provide a set of voltage biases for one or more target devices. The circuit module includes a set of first transistors of a first type and disposed in a doped region, a set of well ties disposed in the doped region and located a predetermined distance from the set of first transistors, a set of second transistors of a second type and disposed outside the doped region, and a set of substrate ties disposed between the doped region and the set of second transistors.

A radiation hardened flip-flop includes a plurality of secondary flip-flops. Each secondary flip-flop includes both a data input terminal and an alternate data input terminal. Each secondary flip-flop also includes an enable terminal that selectively enables use of the alternate data input terminal. The radiation hardened flip-flop includes an error detection circuit that detects whether an error is present in one or more of the secondary flip-flops and provides an enable signal to the enable terminals indicating the presence or absence of an error in one or more of the secondary flip-flops.