An embodiment level converter circuit is configured to receive, as a current supply, a current proportional to temperature.

An apparatus includes a differential input pair, a first resistor, a second resistor, and a comparator. The differential input pair having first and second differential inputs. The first differential input is adapted to be coupled to an output of a controller and the second differential input is adapted to be coupled to a signal ground of the controller. The first resistor is adapted to be coupled to a third resistor via the first differential input to form a first voltage divider. The second resistor is adapted to be coupled to a fourth resistor via the second differential input to form a second voltage divider. The comparator having first and second comparator inputs. The first comparator input is coupled between the first resistor and the first differential input. The second comparator input is coupled between the second resistor and the second differential input.

A potential generating circuit includes a first transistor and a second transistor. Potential at a substrate of the first transistor varies with a first parameter. The first parameter is any one of a supply voltage, an operating temperature, as well as a manufacturing process of the potential generating circuit. Potential at a substrate of the second transistor varies with the first parameter. A gate of the first transistor is connected to a drain of the first transistor. The substrate of the first transistor serves as a first output of the potential generating circuit. A gate of the second transistor is connected to a drain of the second transistor. The substrate of the second transistor serves as a second output of the potential generating circuit.

A bias generation circuit may include a bias generator and compensator. The bias generator may be configured to generate a bias voltage based on a reference voltage. The compensator may be configured to detect level changes of a power voltage. The compensator may be configured to control a level of the bias voltage based on detection results.

A bias generation circuit may include a bias generator and compensator. The bias generator may be configured to generate a bias voltage based on a reference voltage. The compensator may be configured to detect level changes of a power voltage. The compensator may be configured to control a level of the bias voltage based on detection results.

A physically unclonable function device includes a set of diode-connected MOS transistors having a random distribution of respective threshold voltages. A first circuit is configured to impose, on each first transistor, a fixed respective gate voltage regardless of the value of a current flowing in this first transistor. A second circuit is configured to impose, on each second transistor, a fixed respective gate voltage regardless of the value of a current flowing in this second transistor. A current mirror stage is coupled between the first circuit and the second circuit and is configured to deliver the reference current from a sum of the currents flowing in the first transistors. A comparator is configured to deliver a signal whose level depends on a comparison between a first current obtained from a reference current based on the first transistors and a second current of the second transistors.

A buffer apparatus, a chip and an electronic device. The apparatus comprises: a voltage adjustment module (10) comprising a first P-type metal-oxide-semiconductor field-effect transistor (PMOS), wherein the voltage adjustment module (10) is used for receiving an input voltage, using a threshold voltage for the first PMOS to adjust the input voltage, and outputting a driving voltage; and a buffer module (20) electrically connected to the voltage adjustment module (10) and used for receiving an input signal, buffering the input signal under the driving voltage, and outputting a buffered signal. The driving voltage obtained by using the threshold voltage for the first PMOS to adjust the input voltage can compensate for a process corner of the buffer module (20), such that the range of a flip point voltage of the buffer module (20) becomes small and meets process requirements.

A data storage device includes a controller and a memory. The controller includes a host interface and a memory interface. The controller receives inputs from the host, internal storage device inputs, device lifetime calculations, temperature readings and voltage readings. The controller then dynamically adjusts the frequency and voltage for the memory interface based upon the inputs received. As such, the memory interface operates are optimum conditions.

An apparatus is provided, where the apparatus includes a first transistor coupled between a supply node and an output node; a resistor and a second transistor coupled in series between the output node and a ground terminal; a circuitry to receive data, and to output a first control signal and a second control signal to respectively control the first transistor and the second transistor, wherein an output signal at the output node is indicative of the data, and wherein the first transistor is a N-type transistor.

In a transistor turnoff system, a transistor control circuit is configured to adjust a control voltage at a transistor control output responsive to a comparison signal at a control input. The control voltage has a slew rate. A comparator has a comparator output and first and second comparator inputs. The first comparator input is coupled to the transistor control output. The comparator is configured to: provide the comparison signal at the comparator output based on a reference voltage at the second comparator input; and deactivate the transistor control circuit by changing a state of the comparison signal responsive to the control voltage falling below the reference voltage. A slew-rate compensator is configured to increase the reference voltage by a compensation voltage that compensates for a time delay of the comparator or the transistor control circuit. The compensation voltage is proportional to the slew rate.