A multiplexer circuit includes first and second fins each extending in an X-axis direction. First, second, third and fourth gates extend in a Y-axis direction perpendicular to the X-axis direction and contact the first and second fins. The first, second, third and fourth gates are configured to receive first, second, third and fourth data signals, respectively. Fifth, sixth, seventh and eighth gates extend in the Y-axis direction and contact the first and second fins, the fifth, sixth, seventh and eighth gates, and are configured to receive the first, second, third and fourth select signals, respectively. An input logic circuit is configured to provide an output at an intermediate node. A ninth gate extends in the Y-axis direction and contacts the first and second fins. An output logic circuit is configured to provide a selected one of the first, second, third and fourth data signals at an output terminal.

The invention relates to a digital isolator comprising a logic module (20) for receiving an input signal D, and providing command signals (41, 42) to sawtooth modulators. A first sawtooth modulator provides a first sawtooth signal at a node A1 comprising a fast rising edge triggered by a rising edge of a control signal, followed by a slow falling edge, when D equals 1 and comprises a fast falling edge triggered by a rising edge of a control signal, followed by a slow rising edge, when D equals 0. A second sawtooth modulator provides a second sawtooth signal at node A2, inverted with respect to first sawtooth signal. Isolation capacitors (61, 62) are connected to nodes A1 and A2 and are used as isolation barrier and as part of a high-pass filter together with dipoles Z1 and Z2. Threshold comparators (121, 122) provide the output signals S and R. Based on these S and R output signals, the input signal D referred to ground G1 can be regenerated versus a ground G2 using for example SR logic gate, low pass filters or peak detectors.

According to one embodiment, a bus buffer circuit includes an input buffer circuit that receives an input signal, and outputs a non-inversion input signal and an inversion input signal, a voltage conversion circuit that operates by a second power supply, performs voltage conversion on the non-inversion input signal and the inversion input signal input thereto, and outputs the signals as a voltage-converted non-inversion output signal and a voltage-converted inversion output signal, an output retaining circuit that retains the voltage-converted non-inversion output signal and the voltage-converted inversion output signal at a same potential level when an output enable signal is in a disable state, a determinator that determines whether these signals are at a same potential level, a three-state output buffer circuit that outputs the voltage-converted non-inversion output signal or the voltage-converted inversion output signal from an output terminal, and an output controller that sets the three-state output buffer circuit in an output disable state, when the voltage-converted non-inversion output signal and the voltage-converted inversion output signal are at a same potential level, on a basis of an outcome of the determinator. Therefore, it is possible to prevent a potential different from the actual bus signal from being temporarily output during an output state transition, in a case where the state is fixed to reduce the power consumption.

According to one embodiment, a bus buffer circuit includes an input buffer circuit that receives an input signal, and outputs a non-inversion input signal and an inversion input signal, a voltage conversion circuit that operates by a second power supply, performs voltage conversion on the non-inversion input signal and the inversion input signal input thereto, and outputs the signals as a voltage-converted non-inversion output signal and a voltage-converted inversion output signal, an output retaining circuit that retains the voltage-converted non-inversion output signal and the voltage-converted inversion output signal at a same potential level when an output enable signal is in a disable state, a determinator that determines whether these signals are at a same potential level, a three-state output buffer circuit that outputs the voltage-converted non-inversion output signal or the voltage-converted inversion output signal from an output terminal, and an output controller that sets the three-state output buffer circuit in an output disable state, when the voltage-converted non-inversion output signal and the voltage-converted inversion output signal are at a same potential level, on a basis of an outcome of the determinator. Therefore, it is possible to prevent a potential different from the actual bus signal from being temporarily output during an output state transition, in a case where the state is fixed to reduce the power consumption.

A circuit includes a first full adder, a second full adder, a first half adder, a third full adder configured to receive a sum output signal of the first full adder, a sum output signal of the second full adder, and a sum output signal of the first half adder, a fourth full adder configured to receive a carry output signal of the first full adder, a carry output signal of the second full adder, and a carry output signal of the first half adder, a second half adder configured to receive a carry output signal of the third full adder and a sum output signal of the fourth full adder, and a third half adder configured to receive a carry output signal of the second half adder and a carry output signal of the fourth full adder.

A multiplexer circuit includes first and second fins each extending in an X-axis direction. First, second, third and fourth gates extend in a Y-axis direction perpendicular to the X-axis direction and contact the first and second fins. The first, second, third and fourth gates are configured to receive first, second, third and fourth data signals, respectively. Fifth, sixth, seventh and eighth gates extend in the Y-axis direction and contact the first and second fins, the fifth, sixth, seventh and eighth gates, and are configured to receive the first, second, third and fourth select signals, respectively. An input logic circuit is configured to provide an output at an intermediate node. A ninth gate extends in the Y-axis direction and contacts the first and second fins. An output logic circuit is configured to provide a selected one of the first, second, third and fourth data signals at an output terminal.

A semiconductor device being capable of high-speed data transmission and having a reduced circuit area is provided. The semiconductor device includes a semiconductor chip, an external terminal, and a layer including two facing surfaces. The semiconductor chip is provided on one surface side of the layer, and the external terminal is provided on the other surface side of the layer at least in a region not overlapping with the semiconductor chip. The semiconductor chip includes a first circuit including a first transistor, and the layer includes a second circuit including a second transistor. The first circuit is electrically connected to the second circuit, and the second circuit is electrically connected to the external terminal. The second transistor includes a metal oxide in a channel formation region. Note that the second circuit may be a CML circuit. In addition, an insulator may be provided above the one surface of the layer and on a side surface of the semiconductor chip.

A semiconductor device being capable of high-speed data transmission and having a reduced circuit area is provided. The semiconductor device includes a semiconductor chip, an external terminal, and a layer including two facing surfaces. The semiconductor chip is provided on one surface side of the layer, and the external terminal is provided on the other surface side of the layer at least in a region not overlapping with the semiconductor chip. The semiconductor chip includes a first circuit including a first transistor, and the layer includes a second circuit including a second transistor. The first circuit is electrically connected to the second circuit, and the second circuit is electrically connected to the external terminal. The second transistor includes a metal oxide in a channel formation region. Note that the second circuit may be a CML circuit. In addition, an insulator may be provided above the one surface of the layer and on a side surface of the semiconductor chip.

Embodiments provide a method for data storage and comparison, a storage comparison circuit device, and a semiconductor memory. The storage comparison circuit device includes a latch and a comparator. The latch is configured to latch inputted first input data and output first output data and second output data. The first output data are the same as the first input data, whereas the second output data are different from the first input data, wherein the first output data and the second output data are respectively inputted into the comparator. The comparator is configured to receive second input data, the first output data and the second output data, and to output a comparison result. By using modular structures of the latch and the comparator, device data can be simplified for the latch and the comparator, chip area can be reduced, calculation amount can be reduced, and efficiency of data comparison can be improved.

A control system is provides that includes a logic gate generating an output state signal, and first and second redundant controllers, wherein the first controller is configured to output a first state signal to a first input of the logic gate, and the second controller is configured to output a second state signal to a second input of the logic gate, and wherein the first controller is configured to receive an impedance isolated feedback signal corresponding to the second state signal from the second controller, and the second controller is configured to receive an impedance isolated feedback signal corresponding to the first state signal from the first controller, so that each controller can determine whether both inputs to the logic gate match one another.