Certain aspects provide methods and apparatus for in-memory convolution computation. An example circuit for such computation generally includes a memory cell having a bit-line and a complementary bit-line and a computation circuit coupled to a computation input node of the circuit and at least one of the bit-line or the complementary bit-line. In certain aspects, the computation circuit comprises a counter, an NMOS transistor coupled to the memory cell, and a PMOS transistor coupled to the memory cell, drains of the NMOS and PMOS transistors being coupled to the counter.

A memory cell and processing array that has a plurality of memory are capable of performing logic functions, including an exclusive OR (XOR) or an exclusive NOR (XNOR) logic function. The memory cell may have a read port in which the digital data stored in the storage cell of the memory cell is isolated from the read bit line.

Disclosed is a three-port static random access memory (3P-SRAM) that performs XNOR operations. The cell has a write port and first and second read ports. Read operations are enabled through either the first read port using a first read wordline and a common read bitline or the second read port using a second read wordline and the common read bitline. Read wordline activation is controlled such that only one read wordline is activated (i.e., receives a read pulse) at a time. As a result, a read operation through either read port effectively accomplishes an XNOR operation. Also disclosed is a memory array, which incorporates such cells and which performs XNOR-bitcount-compare functions. Since XNOR-bitcount-compare functions are used in XNOR-NET type binary neural networks (BNNs), the memory array can be employed for implementing such a BNN designed for improved performance, scalability, and manufacturability. Also disclosed is an in-memory computing method.

A positive feedback XOR/XNOR gate and a low-delay hybrid logic adder are provided. The low-delay hybrid logic adder comprises the positive feedback XOR/XNOR gate and an output circuit. The positive feedback XOR/XNOR gate comprises a first PMOS transistor and a second PMOS transistor used as pass transistors, a first NMOS transistor and a second NMOS transistor constituting a pull-down network, and a third PMOS transistor, a third NMOS transistor and a fourth NMOS transistor constituting a positive feedback loop. When an XOR logic output terminal of the positive feedback XOR/XNOR gate is pulled down below a switching threshold of an inverter formed by the third PMOS transistor and the fourth NMOS transistor, the positive feedback loop starts to operate to enable the XOR logic output terminal of the positive feedback XOR/XNOR gate to enter a pull-down phase to be pulled down to a low level to avoid threshold voltage losses.

A logic cell for a programmable logic integrated circuit having K function inputs, where K is the largest number such that the logic cell can compute any function of K inputs, and where the logic cell is configurable to implement one bit of a counter in parallel with any independent function of K-1 of the K inputs.

The invention relates to an apparatus and a method for generating a Low-Density Parity-Check (LDPC) code. The apparatus includes: a LDPC encoder, a look-ahead circuitry and an exclusive-OR (XOR) calculation circuitry. The LDPC encoder is arranged operably to encode a front part of a user data using a 2-stage encoding algorithm with a parity check matrix to generate a first calculation result. The look-ahead circuitry is arranged operably to perform a dot product operation on a rear part of the user data and one of a plurality of feature rows corresponding to the parity check matrix to generate a second calculation result in each iteration. The XOR calculation circuitry is arranged operably to perform an XOR operation on the first calculation result and the second calculation result to generate a front part of the LDPC code.

RF switching circuitry includes a plurality of FETs coupled between an input node, an output node, and a gate drive node. When a positive power supply voltage is provided at the gate drive node, the plurality of FETs turn on and provide a low impedance path between the input node and the output node. When a negative power supply voltage is provided at the gate drive node, the plurality of FETs turn off and provide a high impedance path between the input node and the output node. Switch acceleration circuitry in the RF switching circuitry includes a bypass FET and multi-level driver circuitry. The bypass FET selectively bypasses the common resistor in response to a multi-level drive signal. The multi-level driver circuitry uses a built-in gate to capacitance of the bypass FET to provide the multi-level drive signal at an overvoltage that is above the positive power supply voltage.

An apparatus includes a clockless delay adaptation loop configured to adapt to random data. The apparatus also includes a circuit coupled to the clockless delay adaptation loop. The clockless delay adaptation loop includes a cascaded delay line and an autocorrelation control circuit coupled to the cascaded delay line, wherein an output of the autocorrelation control circuit is used to generate a control signal for the cascaded delay line.

A memory cell and processing array that has a plurality of memory are capable of performing logic functions, including an exclusive OR (XOR) or an exclusive NOR (XNOR) logic function. The memory cell may have a read port in which the digital data stored in the storage cell of the memory cell is isolated from the read bit line.

A Hardware-Embedded Delay PUF (HELP) leverages entropy by monitoring path stability and measuring path delays from core logic macros. HELP incorporates techniques to deal with bias. A unique feature of HELP is that it may compare data measured from different test structures. HELP may be implemented in existing FPGA platforms. HELP may leverage both path stability and within-die variations as sources of entropy.