A semiconductor device includes an oscillator that oscillates at a specific frequency, a semiconductor integrated circuit that integrates a temperature sensor that detects a peripheral temperature, and a controller that is electrically connected to the oscillator and that corrects temperature dependent error in the oscillation frequency of the oscillator based on the temperature detected by the temperature sensor and a sealing member that integrally seals the oscillator and the semiconductor integrated circuit.

A clock generating circuit includes a dividing unit and a distribution unit. The dividing unit divides a reference clock to generate a divided clock, and the divided clock has a frequency of 1/N times of a frequency of the reference clock, where N is an integer of two or more. The distribution unit distributes the reference clock to a first route and a second route, the first route includes an output terminal that outputs a clock with a frequency identical to the frequency of the reference clock, and the second route includes the dividing unit. The dividing unit includes one or more amplifiers, one or more dividing circuits, and a correction circuit. The correction circuit is disposed between the amplifier and the dividing circuit, and the correction circuit corrects a level of an input clock input to the dividing circuit.

Hysteresis causes the temperature dependent frequency characteristic of the crystal of a crystal oscillator to be different when the temperature is rising from a previous colder state and when the temperature is falling from a hotter state. A rising temperature-to-frequency mapping polynomial and a falling temperature-to-frequency mapping polynomial are generated and their evaluations are weighted based on a current temperature and past temperature(s). The weighted evaluations are combined and used in temperature-based frequency compensation of the crystal oscillator.

A temperature compensated crystal oscillator (TCXO) includes a crystal oscillator and a temperature sensor to provide a sensed temperature. A delay circuit has a selectable delay to delay the frequency compensation based on the sensed temperature. The delay compensates for a difference between when the temperature sensor reflects a change in temperature and when a frequency of a signal supplied by the crystal oscillator is affected by the change in temperature. The delay may be static or dynamic with respect to the current temperature sensed by the temperature sensor.

A semiconductor device includes an oscillator that oscillates at a specific frequency, a semiconductor integrated circuit that integrates a temperature sensor that detects a peripheral temperature, and a controller that is electrically connected to the oscillator and that corrects temperature dependent error in the oscillation frequency of the oscillator based on the temperature detected by the temperature sensor and a sealing member that integrally seals the oscillator and the semiconductor integrated circuit.

A timing signal generation device includes a PLL circuit that synchronizes a first clock signal of an atomic oscillator with a reference timing signal of a GPS receiver, a PLL circuit that synchronizes a second clock signal of an oven-controlled crystal oscillator with the first clock signal, a first count reset unit that enables resetting of a count value of a divider in the PLL circuit when an operation of the PLL circuit is restarted, and a second count reset unit that enables resetting of a count value of a divider in the PLL circuit when the operation of the PLL circuit is restarted.

A timing signal generation device includes a GPS receiver, an atomic oscillator, a phase comparator, a loop filter, and a divider, a temperature sensor, a DDS, and a DSP. The GPS receiver outputs a reference timing signal. The atomic oscillator outputs a clock signal in accordance with an input voltage value. The phase comparator, the loop filter, and the divider adjust the voltage value in accordance with a synchronization status between the reference timing signal and the clock signal. The temperature sensor outputs a signal depending on the temperature of the atomic oscillator. The DDS converts the frequency of the clock signal and outputs a signal obtained by converting the frequency. The DSP controls the DDS based on an output of the temperature sensor.

An electronic device is equipped with an oscillator interface to be coupled to an oscillator crystal of an oscillator element. The electronic device includes an oscillator circuit which is coupled to the oscillator interface and generates an oscillator signal. The electronic device is further provided with a temperature measurement interface to be coupled to a temperature sensor of the oscillator element so as to receive the temperature signal. For accomplishing temperature compensation, the electronic device is provided with a measurement controller coupled to the measurement: interface and configured to measure a first value of the temperature signal at a first point of time and a. second value of the temperature signal at a second point of time. Afrequency drift estimator is provided so as to estimate a frequency drift of the oscillator signal on the basis of the first value of the temperature signal and a second value of the temperature signal. By means of a compensation logic, a frequency compensation signal for the oscillator circuit is generated on the basis of the estimated frequency drift.

A semiconductor device includes an oscillator that oscillates at a specific frequency, a semiconductor integrated circuit that integrates a temperature sensor that detects a peripheral temperature, and a controller that is electrically connected to the oscillator and that corrects temperature dependent error in the oscillation frequency of the oscillator based on the temperature detected by the temperature sensor and a sealing member that integrally seals the oscillator and the semiconductor integrated circuit.

A semiconductor device includes a mode determination unit configured to determine a power mode based on a temperature of the semiconductor device and a reference temperature, the power mode including one of a first mode which sets the operating frequency of the operation clock to be a first operating frequency and a second mode which sets the operating frequency of the operation clock to be a second operating frequency, and output a control signal according to the power mode to a clock generating unit.